CM600DU-24F MITSUBISHI | Alldatasheet

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Feb. 2009 CM600DU-24F 4-φ6.5MOUNTING G2 E2E1 G1 E2 C1C2E1 RTC RTC Tc measured point Tc measured point CIRCUIT DIAGRAM HOLES 140 130 110±0.25 10 110±0.25 130 14.5 40 14.5 20.4 10 -0.5 24.5 -0.5 36 43.8 13.8 11.5 (26) (26) (26) (15) (15) 3-M8 NUTS 4-M4 NUTS G2E2E1G1 C2E1 APPLICATION General purpose inverters & Servo controlers, etc MITSUBISHI IGBT MODULES CM600DU-24F HIGH POWER SWITCHING USE

  • Insulated Type
  • 2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Feb. 2009 VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V VCC = 600V, IC = 600A, VGE = 15V VCC = 600V, IC = 600A VGE = ±15V RG = 1.0Ω, Inductive load IE = 600A IE = 600A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature measured point is just under the chips IC = 60mA, VCE = 10V IC = 600A, VGE = 15V VCE = 10V VGE = 0V Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG 1200 ±20 600 1200 600 1200 1540 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 MITSUBISHI IGBT MODULES CM600DU-24F HIGH POWER SWITCHING USE V V A A A A W Vrms N • m g 2.55 230 450 200 800 300 500 3.35 0.081 0.11 0.032 5.2 mA µA nF nF nF nC ns ns ns ns ns µC V K/W K/W K/W K/W Ω 1.95 2.05 6600 43.2 0.010 1.0 V 57Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance*1 Symbol Parameter VGE(th) VCE(sat) Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse (Note 2) TC = 25°C Pulse (Note 2) TC = 25°C Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M8 screw Mounting M6 screw G(E) Terminal M4 screw Typical value Symbol Parameter Collector current Emitter current Conditions UnitRatings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max. MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Test conditions Tj = 25°C Tj = 125°C

Feb. 2009 MITSUBISHI IGBT MODULES CM600DU-24F HIGH POWER SWITCHING USE 600 800 1000 1200 400 200 000 . 511 .5 2 2.5 3 3.5 4 101 102 103 104 00 . 511 .5 2 3.5 42.5 3 100 101 102 103 10–1 2 10035 7 2 10135 7 2 10235 7 0.5 1.5 2.5 00 200 400 600 800 1000 1200 4.5 3.5 2.5 1.5 0.5 068 1 0 12 14 16 18 22 20 101 10223 5 7 10323 5 7 101 102 103 100 8.5 9.5 Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C td(off) td(on) tf OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A) tr VGE=20VTj=25°C 11 15 IC = 1200A IC = 600A IC = 240A VGE = 0V Cies Coes Cres Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive load Tj = 25°C PERFORMANCE CURVES

Feb. 2009 MITSUBISHI IGBT MODULES CM600DU-24F HIGH POWER SWITCHING USE 101 10223 5 7 10323 5 7 101 102 103 10–3 100 10–2 100 10–1 10–5 235 7 235 7 235 7 235 710–4 10–2 10–110–3 0 2000 4000 6000 8000 10000 Irr trr 10–1 100 10123 57 23 57 VCC = 400V VCC = 600V IC = 600A REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) Single Pulse TC = 25°C IGBT part: Per unit base = Rth(j–c) = 0.081K/W FWDi part: Per unit base = Rth(j–c) = 0.11K/W Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 25°C Inductive load