CM50TU-34KA MITSUBISHI | Alldatasheet

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Sep. 2001 GuN EuN GvN EvN GwN EwN GuP EuP GvP EvP GwP EwP E GGG GGG EE EEE U V W PN CM 2.8 7.1 12 (4)12 26 8.1 11 21.7 11 21.7 11 0.8 14.411 21.7 11 21.7 11 107 12 23 12 12 23 90 ±0.25 80 ±0.25 102 48.5 17 3.75 3.75 4–φ5.5 MOUNTING HOLES 5–M5NUTS LABEL 0.5 –0.5 Tc measured pointTc measured point P U GUP EUP GUN EUN N V GVP EVP GVN EVN W GWP EWP GWN EWN CIRCUIT DIAGRAM CM50TU-34KA APPLICATION General purpose inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM50TU-34KA HIGH POWER SWITCHING USE G Insulated Type G 6-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Sep. 2001 Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance*1 Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 1000V, IC = 50A, VGE = 15V VCC = 1000V, IC = 50A VGE1 = VGE2 = 15V RG = 6.3Ω, Inductive load switching operation IE = 50A IE = 50A, VGE = 0V , Tj = 25°C IE = 50A, VGE = 0V , Tj = 125°C IGBT part (1/6 module) FWDi part (1/6 module) Case to fin, Thermal compound applied*2 (1/6 module) Tc measured point is just under the chips IC = 5mA, VCE = 10V IC = 50A, VGE = 15V VCE = 10V VGE = 0V 1700 ±20 100 100 600 –40 ~ +150 –40 ~ +125 3500 2.5 ~ 3.5 2.5 ~ 3.5 680 MITSUBISHI IGBT MODULES CM50TU-34KA HIGH POWER SWITCHING USE V V W V N • m N • m g A A 0.5 4.0 7.0 1.2 0.38 100 100 400 800 200 4.6 0.21 0.47 0.17* mA µA nF nC µC V V °C/W 3.2 3.8 225 3.9 2.2 0.09 5.5 V V ns ns Symbol Parameter VGE(th) VCE(sat) Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short TC = 25°C Pulse (Note 2) TC = 25°C Pulse (Note 2) TC = 25°C Main terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max. MAXIMUM RATINGS (Tj = 25°C) ELECTRICAL CHARACTERISTICS (Tj = 25°C) Test conditions

Sep. 2001 MITSUBISHI IGBT MODULES CM50TU-34KA HIGH POWER SWITCHING USE PERFORMANCE CURVES 100 002468 1 0 OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) Tj = 25°C 1112 VGE = 20V 100 0048 1 2 1 6 2 0 TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT (A) GATE-EMITTER VOLTAGE VGE (V) VCE = 10V Tj = 25°C Tj = 125°C 008 0 20 60 40 100 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) VGE = 15V Tj = 25°C Tj = 125°C 0 206 8 12 16 10 14 18 GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25°C IC = 100A IC = 50A IC = 20A 101 103 102 12345 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) Tj = 25°C 10–110–2 10–1 100 101 2 10035 7 2 10135 7 2 10235 7 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) Cies Coes Cres VGE = 0V

Sep. 2001 MITSUBISHI IGBT MODULES CM50TU-34KA HIGH POWER SWITCHING USE 100 10157 10223 5 7 101 102 103 104 100 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A) Conditions: V CC = 1000V VGE = ±15V RG = 6.3Ω Tj = 125°C Inductive load tr td(off) td(on) tf 100 10123 5 7 10223 5 7 101 102 103 trr Irr Conditions: VCC = 1000V VGE = ±15V RG = 6.3Ω Tj = 25°C Inductive load REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IE (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) 101 10–3 10–5 10–4 100 10–2 10–1 10–323 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) TMIE (s) IGBT part: Per unit base = Rth(j– c) = 0.21°C/W FWDi part: Per unit base = R th(j– c) = 0.47°C/W 0 50 150 300100 250 200 GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) VCC = 800V VCC = 1000V IC = 50A