CM50TU-24F_09 MITSUBISHI | Alldatasheet

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Feb. 2009 1.25 4–φ5.5 MOUNTING HOLES 102 2010 10 74 ±0.25 80 ±0.25 39.3 18.7 1.25 GuP EuP GvP EvP GwP EwP GuN EuN GvN EvN GwN EwN PN CM GE GE GE GE GE G E 11 11 1119.1 19.1 11.85 U V W 5–M4NUTS 11 19.1 2.87.1 26 8.1 11 19.1 3.05 10 10 LABEL (4) 0.5 –0.5 CIRCUIT DIAGRAM Tc measured pointTc measured point P UV W GUPG VPG WP GUNG VNG WN EUNE VNE WN N EUPE VPE WP RTC RTCRTC RTC RTCRTC CM50TU-24F APPLICATION General purpose inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM50TU-24F HIGH POWER SWITCHING USE ¡Insulated Type ¡6-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Feb. 2009 VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V VCC = 600V, IC = 50A, VGE = 15V VCC = 600V, IC = 50A VGE = ±15V RG = 6.3Ω, Inductive load IE = 50A IE = 50A, VGE = 0V IGBT part (1/6 module) FWDi part (1/6 module) Case to heat sink, Thermal compound applied*2 (1/6 module) Case temperature measured point is just under the chips IC = 5.0mA, VCE = 10V IC = 50A, VGE = 15V VCE = 10V VGE = 0V 1200 ±20 100 100 320 –40 ~ +150 –40 ~ +125 2500 1.3 ~ 1.7 2.5 ~ 3.5 570 MITSUBISHI IGBT MODULES CM50TU-24F HIGH POWER SWITCHING USE V V W Vrms N • m N • m g A A mA µA nF nC µC V K/W Ω 1.8 1.9 550 2.1 0.11 6.3 V ns ns 2.4 0.85 0.5 100 300 300 150 3.2 0.39 0.70 0.31* Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance*1 ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Symbol Parameter VGE(th) VCE(sat) Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short TC = 25°C Pulse (Note 2) TC = 25°C Pulse (Note 2) TC = 25°C Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M4 screw Mounting M5 screw Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions UnitRatings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max. MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Test conditions Tj = 25°C Tj = 125°C

Feb. 2009 MITSUBISHI IGBT MODULES CM50TU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES 100 0 0.5 1 1.5 2 2.5 3 3.5 4 100 101 102 0.5 1 1.5 2 2.5 3 3.5 10–1 100 101 102 10–1 2 10035 7 2 10135 7 2 10235 7 0.5 1.5 2.5 002 0 4 0 6 08 0 100 068 1 0 12 14 16 18 20 0 10123 5 7 10223 5 7 101 102 103 100 8.5 9.5VGE=20V Tj=25°C

8 Tj = 25°C

Tj = 125°C VGE = 15V IC = 100A IC = 50A IC = 20A Tj = 25°C Tj = 25°C VGE = 0V Cies Coes Cres td(off) td(on) tf tr Conditions: VCC = 600V VGE = ±15V RG = 6.3Ω Tj = 125°C Inductive load OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A)

Feb. 2009 MITSUBISHI IGBT MODULES CM50TU-24F HIGH POWER SWITCHING USE 100 10123 5 7 10223 5 7 100 101 102 101 10–3 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 0 200 400 600 800 10–5 10–4 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Irr trr VCC = 400V VCC = 600V IC = 50A Conditions: VCC = 600V VGE = ±15V RG = 6.3Ω Tj = 25°C Inductive load REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) IGBT part: Per unit base = Rth(j–c) = 0.39K/W FWDi part: Per unit base = R th(j–c) = 0.70K/W REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A)