CM50TU-24F MITSUBISHI | Alldatasheet

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Aug. 1999 CM50TU-24F P UV W G U PG VPG W P G U NG VNG W N EU NE VNE W N N EU PE VPE W P RTC RTCRTC RTC RTCRTC 1.25 4–φ5.5 MOUNTING HOLES 102 2010 10 74 –0.25 80 –0.25 39.3 18.7 1.25 GuP EuP GvP EvP GwP EwP GuN EuN GvN EvN GwN EwN PN CM GE GE GE GE GE G E 11 11 1119.1 19.1 11.85 U V W 5–M4NUTS 11 19.1 2.87.1 26 8.1 11 19.1 3.05 10 10 LABEL (4) 0.5 –0.5 CIRCUIT DIAGRAM Tc measured pointTc measured point APPLICATION General purpose inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM50TU-24F HIGH POWER SWITCHING USE ¡Insulated Type ¡6-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Aug. 1999 VCE = VCES , VGE = 0V VGE = VCES , VCE = 0V Tj = 25°C Tj = 125°C VCC = 600V, IC = 50A, VGE = 15V VCC = 600V, IC = 50A VGE1 = VGE2 = 15V RG = 6.3Ω , Inductive load switching operation IE = 50A IE = 50A, VGE = 0V IGBT part (1/6 module) FWDi part (1/6 module) Case to fin, Thermal compoundapplied *2 (1/6 module) Tc measured point is just under the chips IC = 5.0mA, VCE = 10V IC = 50A, VGE = 15V VCE = 10V VGE = 0V 1200 ±20 100 100 320 –40 ~ +150 –40 ~ +125 2500 1.3 ~ 1.7 2.5 ~ 3.5 570 MITSUBISHI IGBT MODULES CM50TU-24F HIGH POWER SWITCHING USE V V W V N • m N • m g A A mA µA nF nC µC V °C/W Ω 1.8 1.9 550 2.1 0.11 6.3 V ns ns 2.4 0.85 0.5 100 300 300 150 3.2 0.39 0.70 0.31 Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance*1 ICES IGES C ies C oes C res Q G td(on) tr td(off) tf trr (Note 1) Q rr (Note 1) VEC(Note 1) R th(j-c)Q R th(j-c)R R th(c-f) R th(j-c’)Q R G Symbol Parameter VGE(th) VCE(sat) Note 1. IE, VEC , trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short T C = 25°C Pulse (Note 2) TC = 25°C Pulse (Note 2) T C = 25°C Main terminal to base plate, AC 1 min. Main T erminal M4 Mounting holes M5 Typical value Symbol Parameter Collector current Emitter current T orque strength Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max. MAXIMUM RATINGS (Tj = 25°C) ELECTRICAL CHARACTERISTICS (Tj = 25°C) Test conditions

Aug. 1999 MITSUBISHI IGBT MODULES CM50TU-24F HIGH POWER SWITCHING USE 100 0 0.5 1 1.5 2 2.5 3 3.5 4 100 101 102 0.5 1 1.5 2 2.5 3 3.5 10–1 100 101 102 10–1 2 10035 7 2 10135 7 2 10235 7 0.5 1.5 2.5 00 20 40 60 80 100 06 8 10 12 14 16 18 20 0 10123 5 7 10223 5 7 101 102 103 100 8.5 9.5VGE =20V Tj=25°C

8 Tj = 25°C

Tj = 125°C VGE = 15V IC = 100A IC = 50A IC = 20A Tj = 25°C Tj = 25°C VGE = 0V C ies C oes C res td(off) td(on) tf tr Conditions: VCC = 600V VGE = –15V R G = 6.3Ω Tj = 125°C Inductive load OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) COLLECTOR CURRENT I C (A) GATE-EMITTER VOLTAGE V GE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT I E (A) EMITTER-COLLECTOR VOLTAGE V EC (V) CAPACITANCE–V CE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE C ies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) SWITCHING TIMES (ns) COLLECTOR CURRENT I C (A) PERFORMANCE CURVES

Aug. 1999 MITSUBISHI IGBT MODULES CM50TU-24F HIGH POWER SWITCHING USE 100 10123 5 7 10223 5 7 100 101 102 101 10–3 100 10–2 10–1 10–323 57 23 57 23 57 23 57 10110–2 10–1 100 0 200 400 600 800 10–5 10–4 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Irr trr VCC = 400V VCC = 600V IC = 50A Conditions: VCC = 600V VGE = –15V R G = 6.3Ω Tj = 25°C Inductive load REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT I E (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th (j–c) (°C/W) TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE V GE (V) GATE CHARGE Q G (nC) IGBT part: Per unit base = Rth(j–c) = 0.39°C/W FWDi part: Per unit base = R th(j–c) = 0.70°C/W REVERSE RECOVERY TIME t rr (ns) REVERSE RECOVERY CURRENT l rr (A)