CM50TL-24NF MITSUBISHI | Alldatasheet

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Feb. 2009 CM50TL-24NF APPLICATION AC drive inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM50TL-24NF HIGH POWER SWITCHING USE ¡Insulated Type ¡6-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm B NP UV W CN 8 1 1 1 1 UP VP WP 2-φ5.5 MOUNTING HOLES 5511.75 (13.5) 106 ±0.5 13.62 17 1740.78 12011 6-M5 NUTS (19.75) 10.75 22 23 23 23 23.2 (SCREWING DEPTH) 1212 12 12 AB –0.5 LABEL Housing Type of A and B A = B8P-VH-FB-B, B = B2P-VH-FB-B P BU N CN-7 CN-8 CN-5 CN-6 UP-1 UP-2 V CN-3 CN-4 VP-1 VP-2 W CN-1 CN-2 WP-1 WP-2 NC NC NC CIRCUIT DIAGRAM

Feb. 2009 IC = 5.0mA, VCE = 10V IC = 50A, VGE = 15V VCE = 10V VGE = 0V VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V VCC = 600V, IC = 50A, VGE = 15V VCC = 600V, IC = 50A VGE = ±15V RG = 6.3Ω, Inductive load IE = 50A IE = 50A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to heat sink, Thermal compound Applied (1/6 module)*2 1200 ±20 100 100 390 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 350 MITSUBISHI IGBT MODULES CM50TL-24NF HIGH POWER SWITCHING USE V V A A A A W Vrms N • m N • m g 0.5 3.0 8.5 0.75 0.17 100 300 350 100 3.8 0.32 0.43 mA µA nF nF nF nC ns ns ns ns µC V K/W K/W K/W Ω 2.1 2.4 250 0.085 6.3 V ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Symbol Parameter VGE(th) VCE(sat) *1 : Case temperature (Tc) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short DC, TC = 94°C*1 Pulse (Note 2) Pulse (Note 2) TC = 25°C Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions UnitRatings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max. ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Test conditions Tj = 25°C Tj = 125°C

Feb. 2009 MITSUBISHI IGBT MODULES CM50TL-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES 10–2 10–1 100 101 102 OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) Tj = 25°C VGE = 20V 15 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) VGE = 15V Tj = 25°C Tj = 125°C 0 2012 1468 1 0 16 18 GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25°C IC = 50A IC = 100A IC = 20A 012 4 35 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) Tj = 25°C Tj = 125°C 10–1 2 10035 7 2 10135 7 2 10235 7 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) Cies Coes Cres VGE = 0V 100 101 102 103 100 101 102 103 100 10157 10223 5 723 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) Conditions: VCC = 600V VGE = ±15V RG = 6.3Ω Tj = 125°C Inductive load td(on) td(off) tf tr 100 02468 1 0 0 02 0 6 0 10040 800

Feb. 2009 MITSUBISHI IGBT MODULES CM50TL-24NF HIGH POWER SWITCHING USE 100 10123 5 7 10223 5 7 101 102 103 trr Irr REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IE (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) Conditions: VCC = 600V VGE = ±15V RG = 6.3Ω Tj = 25°C Inductive load 10–3 101 100 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse, TC = 25°C Under the chip TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) TIME (s) IGBT part: Per unit base = Rth(j–c) = 0.32K/W FWDi part: Per unit base = R th(j–c) = 0.43K/W 10–1 100 10157 10223 5 723 RECOVERY LOSS vs. IE (TYPICAL) RECOVERY LOSS (mJ/pulse) EMITTER CURRENT IE (A) Conditions: VCC = 600V VGE = ±15V RG = 6.3Ω Tj = 125°C Inductive load C snubber at bus Err 101 100 10–1 100 10157 10223 5 723 SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS (mJ/pulse) COLLECTOR CURRENT IC (A) Conditions: VCC = 600V VGE = ±15V RG = 6.3Ω Tj = 125°C Inductive load C snubber at bus Esw(off) Esw(on) SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) SWITCHING LOSS (mJ/pulse) GATE RESISTANCE RG (Ω) 102 101 100 Conditions: V CC = 600V VGE = ±15V IC = 50A Tj = 125°C Inductive load C snubber at bus Esw(off) Esw(on) 100 10157 10223 5 723 102 101 100 100 10157 10223 5 723 RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) RECOVERY LOSS (mJ/pulse) GATE RESISTANCE RG (Ω) Conditions: VCC = 600V VGE = ±15V IE = 50A Tj = 125°C Inductive load C snubber at bus Err

Feb. 2009 GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) VCC = 600V VCC = 400V IC = 50A 0 200 400100 3000 MITSUBISHI IGBT MODULES CM50TL-24NF HIGH POWER SWITCHING USE