CM50TF-28H

CM50TF-28H MITSUBISHI | Alldatasheet

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Sep.1998 Dimensions Inches Millimeters C 3.150 ±0.01 80.0 ±0.25 D 2.913 ±0.01 74.0 ±0.25 E 1.69 43.0 G 1.18 30.0 H 1.16 29.5 J 1.06 27.0 K 0.96 24.5 L 0.87 22.0 M 0.79 20.0 N 0.67 17.0 Description: Mitsubishi IGBT Modules are de- signed for use in switching appli- cations. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected super- fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified sys- tem assembly and thermal man- agement. Features: u Low Drive Power u Low V CE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM50TF-28H is a 1400V (V CES ), 50 Ampere Six-IGBT Module. Type Current Rating V CES Amperes Volts (x 50) CM 50 28 Dimensions Inches Millimeters P 0.65 16.5 Q 0.55 14.0 R 0.47 12.0 S 0.43 11.0 T 0.39 10.0 U 0.33 8.5 V 0.32 8.1 X 0.24 6.0 Y 0.22 Dia. Dia. 5.5 Z M4 Metric M4 AA 0.08 2.0 AB 0.28 7.0 MITSUBISHI IGBT MODULES CM50TF-28H MEDIUM POWER SWITCHING USE INSULATED TYPE Outline Drawing and Circuit Diagram AB F H V TAB #110, t = 0.5 C L E A G N D U AA L B P G K JT R M M AA S X Q X Q XN Z - M4 THD (7 TYP.) Y DIA. (4 TYP.) G uPE uPG vPE vPG w PE w P G uNE uNG vNE vNG w NE w N P P N N UVW P GuP EuP GuN EuN U GvP EvP V GvN EvN GwP EwP W GwN EwN P N N

Sep.1998 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM50TF-28H Units Junction Temperature T j –40 to 150 °C Storage Temperature T stg –40 to 125 °C Collector-Emitter Voltage (G-E-SHORT) V CES 1400 Volts Gate-Emitter Voltage (C-E-SHORT) V GES ±20 Volts Collector Current (TC = 25°C) I C 50 Amperes Peak Collector Current I CM 100* Amperes Emitter Current (TC = 25°C) I E 50 Amperes Peak Emitter Current I EM 100* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) P c 400 Watts Mounting Torque, M4 Main Terminal – 0.98 ~ 1.47 N · m Mounting Torque, M5 Mounting – 1.47 ~ 1.96 N · m Weight – 540 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Vrms *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 1.0 mA Gate Leakage Current I GES VGE = VGES , VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 5mA, VCE = 10V 5.0 6.5 8.0 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 50A, VGE = 15V – 3.1 4.2 Volts IC = 50A, VGE = 15V, Tj = 150°C – 2.95 – Volts Total Gate Charge Q G VCC = 800V, IC = 50A, VGE = 15V – 255 – nC Emitter-Collector Voltage V EC IE = 50A, VGE = 0V – – 3.8 Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies – – 10 nF Output Capacitance C oes VGE = 0V, VCE = 10V – – 3.5 nF Reverse Transfer Capacitance C res – – 2 nF Resistive Turn-on Delay Time t d(on) – – 100 ns Load Rise Time t r VCC = 800V, IC = 50A, – – 250 ns Switching Turn-off Delay Time t d(off) VGE1 = VGE2 = 15V, RG = 6.3Ω – – 150 ns Times Fall Time t f – – 500 ns Diode Reverse Recovery Time t rr IE = 50A, diE/dt = –100A/µs – – 300 ns Diode Reverse Recovery Charge Q rr IE = 50A, diE/dt = –100A/µs – 0.5 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c) Per IGBT – – 0.31 °C/W Thermal Resistance, Junction to Case R th(j-c) Per FWDi – – 0.70 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – – 0.033 °C/W MITSUBISHI IGBT MODULES CM50TF-28H MEDIUM POWER SWITCHING USE INSULATED TYPE

Sep.1998 MITSUBISHI IGBT MODULES CM50TF-28H MEDIUM POWER SWITCHING USE INSULATED TYPE COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 02 04 0 6 0 8 0 100 VGE = 15V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 02468 1 0 VGE = 20V 15 1213 Tj = 25oC 100 100 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 101 102 EMITTER CURRENT, I E, (AMPERES) Tj = 25°C GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 4 8 12 16 20 Tj = 25°C IC = 20A IC = 100A IC = 50A GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 0 4 8 12 16 20 VCE = 10V Tj = 25°C Tj = 125°C 100 GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 100 200 300 400 VCC = 800V VCC = 600V IC = 50A EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 100 101 102 102 101 trr Irr di/dt = -100A/µsec Tj = 25°C 101 100 10-1 REVERSE RECOVERY CURRENT, I rr, (AMPERES) COLLECTOR CURRENT, I C , (AMPERES) SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 100 101 102 103 101 100 102 td(off) td(on) tr VCC = 800V VGE = ±15V R G = 6.3Ω Tj = 125°C tf COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE (TYPICAL) 10-1 100 102 102 101 100 10-2 VGE = 0V 101 C ies C oes C res10-1

Sep.1998 MITSUBISHI IGBT MODULES CM50TF-28H MEDIUM POWER SWITCHING USE INSULATED TYPE TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = R th

• (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.7°C/W 10-1 10-2 10-3 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = R th
• (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.31°C/W 10-1 10-2 10-3