CM50RL-24NF

CM50RL-24NF MITSUBISHI | Alldatasheet

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Jun. 2004 CM50RL-24NF APPLICATION AC drive inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM50RL-24NF HIGH POWER SWITCHING USE ¡Insulated Type ¡7-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm B NP UV W CN 8 1 1 1 1 UP VP WP 2-φ5.5 MOUNTING HOLES 5511.75 (13.5) 106 ±0.5 13.62 17 1740.78 12011 6-M5 NUTS (19.75) 10.75 22 23 23 23 23.2 (SCREWING DEPTH) 1212 12 12 AB –0.5 LABEL Housing Type of A and B A = B8P-VH-FB-B, B = B2P-VH-FB-B P BU N CN-7 CN-8 CN-5 CN-6 UP-1 UP-2 V CN-3 CN-4 VP-1 VP-2 W CN-1 CN-2 WP-1 WP-2 CIRCUIT DIAGRAM

Jun. 2004 1200 ±20 100 100 390 MITSUBISHI IGBT MODULES CM50RL-24NF HIGH POWER SWITCHING USE V V A A A A W Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation G-E Short C-E Short DC, T C = 94°C *1 Pulse (Note 2) Pulse (Note 2) TC = 25°C Symbol Parameter Collector current Emitter current Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) ABSOLUTE MAXIMUM RATINGS (Tj = 25°C) INVERTER PART 1200 ±20 290 1200 V V A A W V A Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Repetitive peak reverse voltage Forward current G-E Short C-E Short DC, T C = 104°C *1 Pulse (Note 2) TC = 25°C Clamp diode part Clamp diode part Symbol Parameter Collector current Conditions Unit Ratings V CES VGES IC ICM PC (Note 3) VRRM IFM BRAKE PART –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 350 V N • m N • m g Junction temperature Storage temperature Isolation voltage Torque strength Weight Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value Symbol Parameter Conditions Unit Ratings T j Tstg Viso (COMMON RATING)

Jun. 2004 IC = 3.0mA IC = 30A, VGE = 15V VCE = 10V VGE = 0V VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V VCC = 600V, IC = 50A, VGE = 15V VCC = 600V, IC = 50A VGE1 = VGE2 = 15V R G = 6.3Ω , Inductive load switching operation IE = 50A IE = 50A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to fin, Thermal compound Applied (1/6 module)*2 VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V VCC = 600V, IC = 30A, VGE = 15V IF = 30A IGBT part*1 Clamp diode part*1 IC = 5.0mA, VCE = 10V IC = 50A, VGE = 15V VCE = 10V VGE = 0V MITSUBISHI IGBT MODULES CM50RL-24NF HIGH POWER SWITCHING USE 0.5 3.0 8.5 0.75 0.17 100 300 350 100 3.8 0.32 0.43 mA µA nF nF nF nC ns ns ns ns µC V °C/W °C/W °C/W Ω 2.1 2.4 250 0.085 6.3 V ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance ICES IGES C ies C oes C res Q G td(on) tr td(off) tf trr (Note 1) Q rr (Note 1) VEC(Note 1) R th(j-c)Q R th(j-c)R R th(c-f) R G Symbol Parameter VGE(th) VCE(sat) UnitTyp. Limits Min. Max.Test conditions ELECTRICAL CHARACTERISTICS (Tj = 25°C) INVERTER PART 0.5 3.0 5.1 0.45 0.10 3.8 0.43 0.65 100 mA µA nF nF nF nC V °C/W °C/W Ω 2.1 2.4 150 V Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage ICES IGES C ies C oes C res Q G VFM R th(j-c)Q R th(j-c)R R G Symbol Parameter VGE(th) VCE(sat) *1 : Tc measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. Note 1. IE, VEC , trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause neglible temperature rise. UnitTyp. Limits Min. Max.Test conditions BRAKE PART Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C

Jun. 2004 MITSUBISHI IGBT MODULES CM50RL-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES 10–2 10–1 100 101 102 OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) Tj = 25°C VGE = 20V 15 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) COLLECTOR CURRENT I C (A) VGE = 15V Tj = 25°C Tj = 125°C 0 2012 146 8 10 16 18 GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) Tj = 25°C IC = 50A IC = 100A IC = 20A 012 4 35 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT I E (A) EMITTER-COLLECTOR VOLTAGE V EC (V) Tj = 25°C Tj = 125°C 10–1 2 10035 7 2 10135 7 2 10235 7 CAPACITANCE–V CE CHARACTERISTICS (TYPICAL) CAPACITANCE C ies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE V CE (V) C ies C oes C res VGE = 0V 100 101 102 103 100 101 102 103 100 10157 10223 5 723 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) COLLECTOR CURRENT I C (A) Conditions: V CC = 600V VGE = ±15V R G = 6.3Ω Tj = 125°C Inductive load td(on) td(off) tf tr 100 02468 1 0 0 0 20 60 100 40 800

Jun. 2004 MITSUBISHI IGBT MODULES CM50RL-24NF HIGH POWER SWITCHING USE 100 10123 5 7 10223 5 7 101 102 103 trr Irr REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT I E (A) REVERSE RECOVERY TIME t rr (ns) REVERSE RECOVERY CURRENT l rr (A) Conditions: VCC = 600V VGE = ±15V R G = 6.3Ω Tj = 25°C Inductive load 10–3 101 100 10–5 10–4 100 10–2 10–1 10–323 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse, TC = 25°C Under the chip TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th (j–c) (ratio) TIME (s) IGBT part: Per unit base = R th(j–c) = 0.32°C/W FWDi part: Per unit base = R th(j–c) = 0.43°C/W 10–1 100 10157 10223 5 723 RECOVERY LOSS vs. I E (TYPICAL) RECOVERY LOSS (mJ/pulse) EMITTER CURRENT I E (A) Conditions: VCC = 600V VGE = ±15V R G = 6.3Ω Tj = 125°C Inductive load C snubber at bus Err 101 100 10–1 100 10157 10223 5 723 SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS (mJ/pulse) COLLECTOR CURRENT I C (A) Conditions: V CC = 600V VGE = ±15V R G = 6.3Ω Tj = 125°C Inductive load C snubber at bus Esw(off) Esw(on) SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) SWITCHING LOSS (mJ/pulse) GATE RESISTANCE R G (Ω ) 102 101 100 Conditions: VCC = 600V VGE = ±15V IC = 50A Tj = 125°C Inductive load C snubber at bus Esw(off) Esw(on) 100 10157 10223 5 723 102 101 100 100 10157 10223 5 723 RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) RECOVERY LOSS (mJ/pulse) GATE RESISTANCE R G (Ω ) Conditions: VCC = 600V VGE = ±15V IE = 50A Tj = 125°C Inductive load C snubber at bus Err

Jun. 2004 GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE V GE (V) GATE CHARGE Q G (nC) VCC = 600V VCC = 400V IC = 50A 0 200 400100 3000 MITSUBISHI IGBT MODULES CM50RL-24NF HIGH POWER SWITCHING USE