CM50MD1-12H

CM50MD1-12H MITSUBISHI | Alldatasheet

Document overview

• Manufacturer or author: Minami Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Feb.1999 CM50MD1-12H BW EW GW GW V EVGV GV U EU GU GU P1P N T S E CIRCUIT DIAGRAM MAIN CIRCUIT TERMINAL CONTROL CIRCUIT TERMINAL R t = 0.6 t = 0.6 45° GB ; NOT CONNECTED GWEW GWGV E GV GU EV GU EU TBU V WSR NP1P GGG GBGGGEEEE 2.54 2.54 2.54 2.54 2.54 2.54 12.5 12.5 12.515 4 0.62 6.3 1512.5 2–φ4.5 MOUNTING HOLES 105 ±0.25 29 ±0.2529 ±0.25 115 2–R5.5 LABEL APPLICATION AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics, UPS MITSUBISHI IGBT MODULES CM50MD1-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE ¡Insulated Type ¡CIB Module 3φ Inverter+3φ Converter ¡UL Recognized Y ellow Card No. E80276 (N) File No. E80271 OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Feb.1999 MITSUBISHI IGBT MODULES CM50MD1-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) INVERTER PART CONVERTER PART COMMON RATING Collector-emitter voltage Gate-emitter voltage Collector Current Emitter Current Maximum collector dissipation 600 ±20 100 100 104 G – E Short C – E Short TC = 25°C PULSE (Note. 2) TC = 25°C PULSE (Note. 2) Tf = 25°C Symbol Parameter Condition Unit Rating V V A A A A W V CES VGES IC ICM IE (Note. 1) IEM (Note. 1) PC (Note. 3) Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing 800 220 550 1.25 103 3φ rectifying circuit Tf = 106°C 1 cycle at 60Hz, peak value Non-repetitive Value for one cycle of surge current Symbol Parameter Condition Unit Rating V V A A A2s VRRM Ea IO IFSM I2t Tj Tstg Viso Junction temperature Storage temperature Isolation voltage Mounting torque Weight –40 ~ +150 –40 ~ +125 2500 0.98 ~1.47 100 AC 1 min. Mounting M4 screw Typical value Symbol Parameter Condition Unit Rating V N . m g

Feb.1999 MITSUBISHI IGBT MODULES CM50MD1-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE ELECTRICAL CHARACTERISTICS (Tj = 25°C) INVERTER PART CONVERTER PART Note 1. IE, VEC , trr, Q rr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Thermal resistance is specified under following conditions.

• The conductive greese applied, between module and fin.
• Al plate is used as fin. Collector cutoff current Gate-emitter threshold voltage Gate-emitter cutoff current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance V V 0.5 2.8 5.0 3.8 1.0 120 300 200 300 2.8 110 1.2 1.9 V CE = VCES , VGE = 0V VGE = VGES , VCE = 0V Tj = 25°C Tj = 150°C VCC = 300V, IC = 50A, VGE = 15V VCC = 300V , IC = 50A VGE1 = VGE2 = 15V R G = 13Ω Resistive load I E = 50A, VGE = 0V IE = 50A, VGE = 0V die / dt = – 100A / µs IGBT part, Per 1/6 module FWDi part, Per 1/6 module mA µ A nF nF nF nC ns ns ns ns V ns µ C °C/W °C/W 2.2 150 0.14 I CES IGES C ies C oes C res Q G td (on) tr td (off) tf VEC (Note. 1) trr (Note. 1) Q rr (Note. 1) R th(j-f)Q (Note. 5) R th(j-f)R (Note. 5) Symbol Parameter Test conditions VGE(th) VCE(sat) Limits Min. Typ. Max. Unit 64.5 7.5IC = 5mA, VCE = 10V IC = 50A, VGE = 15V (Note. 4) VCE = 10V VGE = 0V Repetitive reverse current Forward voltage drop Thermal resistance V R = VRRM , Tj = 150°C IF = 50A Per 1/6 module mA V °C/W I RRM VFM R th(j-f) (Note. 5) Symbol Parameter Condition Limits Min. Typ. Max. Unit 1.5 1.7

Feb.1999 0 1000 25 50 75 Tj = 25°C Tj = 125°C VGE = 15V 102 0 0.8 1.6 101 3 2.4 3.2 4.0 Tj = 25°C 0 201020 4 6 8 1 21 41 61 8 Tj = 25°C IC = 100A IC = 50A IC = 20A 100 0 10510 234 6789 VGE = 20 (V) Tj=25°C 100 0 201020 4 6 8 1 21 41 61 8 VCE = 10V Tj = 25°C Tj = 125°C 101 100 35 7 100 23 5 7 101 23 2357 10210–1 C ies VGE = 0V C oes C res OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT I C (A) GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) COLLECTOR CURRENT I C (A) GATE-EMITTER VOLTAGE V GE (V) FREE-WHEEL DIODE FORWARD CHARACTERISITICS (TYPICAL) EMITTER CURRENT I E (A) EMITTER-COLLECTOR VOLTAGE V EC (V) CAPACITANCE VS. V CE (TYPICAL) CAPACITANCE C ies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) MITSUBISHI IGBT MODULES CM50MD1-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE PERFORMANCE CURVES

Feb.1999 101 103 100 23 5 7 101 102 23 5 7 102 td(off) VCC = 300V VGE = ±15V R G = 13Ω Tj = 125°C td(on) tf tr 101 103 100 23 5 7 101 102 23 5 7 102 10–1 101 100 –di/dt = 100A / µs Tj = 25°C trr Irr 101 10–3 10–5 10–4 100 10–2 10–1 10–323 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse Tf = 25°C R th(j – f) = 1.2°C/W 101 10–3 10–5 10–4 100 10–2 10–1 10–323 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse Tf = 25°C R th(j – f) = 1.9°C/W 0 250200500 100 150 VCC = 200V VCC = 300V IC = 50A NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th (j – f) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIMES (ns) COLLECTOR CURRENT I C (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) REVERSE RECOVERY TIME t rr (ns) EMITTER CURRENT I E (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th (j – f) TIME (s) TIME (s) VGE – GATE CHARGE (TYPICAL) GATE-EMITTER VOLTAGE V GE (V) GATE CHARGE Q G (nC) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) REVERSE RECOVERY CURRENT l rr (A) MITSUBISHI IGBT MODULES CM50MD1-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE