CM50DY-28H MITSUBISHI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Sep.1998 Dimensions Inches Millimeters A 3.70 94.0 B 3.150 ±0.01 80.0 ±0.25 C 1.57 40.0 D 1.34 34.0 E 1.22 Max. 31.0 Max. F 0.90 23.0 G 0.85 21.5 H 0.79 20.0 J 0.71 18.0 Dimensions Inches Millimeters K 0.67 17.0 L 0.63 16.0 M 0.51 13.0 N 0.47 12.0 P 0.28 7.0 Q 0.256 Dia. Dia. 6.5 R 0.16 4.0 S M5 Metric M5 Description: Mitsubishi IGBT Modules are de- signed for use in switching appli- cations. Each module consists of two IGBTs in a half-bridge configu- ration with each transistor having a reverse-connected super-fast re- covery free-wheel diode. All com- ponents and interconnects are iso- lated from the heat sinking base- plate, offering simplified system assembly and thermal manage- ment. Features: u Low Drive Power u Low V CE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM50DY-28H is a 1400V-(V CES ), 50 Ampere Dual IGBT Module. Type Current Rating V CES Amperes Volts (x 50) CM 50 28 MITSUBISHI IGBT MODULES CM50DY-28H MEDIUM POWER SWITCHING USE INSULATED TYPE Outline Drawing and Circuit Diagram B FF C K R R R D A E G N HH J P M (3 TYP.) (2 TYP.) (3 TYP.) E2C2E1 E2G1 G2 S - M5 THD Q - DIA. L TAB#110 t=0.5 C2E1

Sep.1998 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM50DY-28H Units Junction Temperature T j –40 to 150 °C Storage Temperature T stg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 1400 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (TC = 25°C) I C 50 Amperes Peak Collector Current I CM 100* Amperes Emitter Current (TC = 25°C) I E 50 Amperes Peak Emitter Current I EM 100* Amperes Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) P c 400 Watts Mounting Torque, M5 Main Terminal – 1.47 ~ 1.96 N · m Mounting Torque, M6 Mounting – 1.96 ~ 2.94 N · m Weight – 190 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Vrms *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 1.0 mA Gate Leakage Current I GES VGE = VGES , VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 5mA, VCE = 10V 5.0 6.5 8.0 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 50A, VGE = 15V – 3.1 4.2 Volts IC = 50A, VGE = 15V, Tj = 150°C – 2.95 – Volts Total Gate Charge Q G VCC = 800V, IC = 50A, VGE = 15V – 255 – nC Emitter-Collector Voltage V EC IE = 50A, VGE = 0V – – 3.8 Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies – – 10 nF Output Capacitance C oes VGE = 0V, VCE = 10V – – 3.5 nF Reverse Transfer Capacitance C res – – 2.0 nF Resistive Turn-on Delay Time t d(on) – – 100 ns Load Rise Time t r VCC = 800V, IC = 50A, – – 250 ns Switching Turn-off Delay Time t d(off) VGE1 = VGE2 = 15V, RG = 6.3Ω – – 150 ns Times Fall Time t f – – 500 ns Diode Reverse Recovery Time t rr IE = 50A, diE/dt = –100A/µs – – 300 ns Diode Reverse Recovery Charge Q rr IE = 50A, diE/dt = –100A/µs – 0.5 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c) Per IGBT – – 0.31 °C/W Thermal Resistance, Junction to Case R th(j-c) Per FWDi – – 0.70 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – – 0.075 °C/W MITSUBISHI IGBT MODULES CM50DY-28H MEDIUM POWER SWITCHING USE INSULATED TYPE

Sep.1998 EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 100 101 102 102 101 trr Irr di/dt = -100A/µsec Tj = 25°C 101 100 10-1 REVERSE RECOVERY CURRENT, I rr, (AMPERES) COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 02 04 0 6 0 8 0 100 VGE = 15V Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 4 8 12 16 20 Tj = 25°C IC = 20A IC = 100A IC = 50A 100 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 101 102 EMITTER CURRENT, I E, (AMPERES) Tj = 25°C 3.5 COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE (TYPICAL) 10-1 100 102 102 100 10-2 VGE = 0V 101 C oes C res 10-1

101 C ies

COLLECTOR CURRENT, I C , (AMPERES) SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 100 101 102 102 100 td(on) tr 103

101 VCC = 800V

VGE = ±15V R G = 6.3Ω Tj = 125°C td(off) tf GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 100 200 400 VCC = 600V VCC = 800V IC = 50A 300 COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 02468 1 0 VGE = 20V 13 12 Tj = 25oC 100 GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 0 4 8 12 16 20 100 VCE = 10V Tj = 25°C Tj = 125°C MITSUBISHI IGBT MODULES CM50DY-28H MEDIUM POWER SWITCHING USE INSULATED TYPE

Sep.1998 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.7°C/W Zth = R th

  • (NORMALIZED VALUE) 10-1 10-2 10-3 TIME, (s) TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.31°C/W Zth = R th
  • (NORMALIZED VALUE) 10-1 10-2 10-3 MITSUBISHI IGBT MODULES CM50DY-28H MEDIUM POWER SWITCHING USE INSULATED TYPE