CM50DU-24H MITSUBISHI | Alldatasheet

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Feb. 2009 MITSUBISHI IGBT MODULES CM50DU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE

  • Insulated Type
  • 2-elements in a pack APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders CM50DU-24H OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm C2E1 E2 C1 G2E2E1G1 CM G1E1 E2 G2 C2E1 C1E2 16 162.5 21.2 7.5 2.525 17 23 11441 8 23 4 12 13.5 80 ±0.25 2–φ6.5 MOUNTING HOLES 3–M5NUTS 12mm deep TAB #110. t=0.5 –0.5 LABEL CIRCUIT DIAGRAM TC measured point

Feb. 2009 MITSUBISHI IGBT MODULES CM50DU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE V V VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 600V, IC = 50A, VGE = 15V VCC = 600V, IC = 50A VGE = ±15V RG = 6.3Ω Resistive load I E = 50A, VGE = 0V IE = 50A, die / dt = –100A / µs Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to heat sink, conductive grease applied (Per 1/2 module) (Note 6) I C = 5mA, VCE = 10V IC = 50A, VGE = 15V (Note 4) VCE = 10V VGE = 0V Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance (Note 5) Contact thermal resistance Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight V GE = 0V VCE = 0V TC = 25°C Pulse (Note 1) T C = 25°C Pulse (Note 1) T C = 25°C Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value Collector current Emitter current 1200 ±20 100 100 400 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol Item Conditions Unit Ratings V V A A A A W Vrms N·m N·m g V CES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Min Typ Max 0.5 3.7 7.5 2.6 1.5 200 150 350 3.2 300 0.31 0.7 mA µA nF nF nF nC ns ns ns ns V ns µC K/W K/W K/W 2.9 2.85 187 0.28 0.07 I CES IGES Cies Coes Cres QG td (on) tr td (off) tf VEC(Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Item Test Conditions VGE(th) VCE(sat) Limits Unit 64.5 Note 1. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Case temperature (T C) measured point is shown in page OUTLINE DRAWING. 7.5 6. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].

Feb. 2009 MITSUBISHI IGBT MODULES CM50DU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES 0 200 48 1 2 16 Tj = 25°C IC = 100A IC = 50A IC = 20A 101 102 Tj = 25°C 10–2 10–1 100 101 10–1 2 10035 7 2 10135 7 2 10235 7 VGE = 0V Cies Coes Cres 100 048 1 2 16 20 VCE = 10V Tj = 25°C Tj = 125°C 0 1000 25 50 75 Tj = 25°C Tj = 125°C VGE = 15V 100 02468 1 0 VGE = 20 (V) Tj = 25°C FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V)

Feb. 2009 MITSUBISHI IGBT MODULES CM50DU-24H MEDIUM POWER SWITCHING USE INSULATED TYPE 101 100 102 100 10123 5 7 10223 5 7 101 102 103 7 –d i/dt = 100A/µs Tj = 25°C trr Irr 101 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Per unit base = Rth(j – c) = 0.7K/W 101 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Per unit base = Rth(j – c) = 0.31K/W 100 101 102 103 100 10123 5 7 10223 5 7 VCC = 600V VGE = ±15V RG = 6.3Ω Tj = 125°C td(off) td(on) tf tr 05 0 100 150 200 250 VCC = 400V VCC = 600V IC = 50A TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TIME (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) REVERSE RECOVERY TIME trr (ns) EMITTER CURRENT IE (A) REVERSE RECOVERY CURRENT Irr (A) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c)