CM50AD00-12H

CM50AD00-12H MITSUBISHI | Alldatasheet

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Sep. 2000 MITSUBISHI IGBT MODULES CM50AD00-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE CM50AD00-12H \ Insulated Type \ CIB Module 3φ Inverter + 3φ Converter + Brake Thyristor + Thermistor + Current shunt resistor APPLICATION AC & DC motor controls, General purpose inverters GUP EUP GUN U GVP EVP GVN V GWP EWP GWN W E R S T P1 P2 P N1 NTH1 TH2 B GB CIRCUIT DIAGRAM GT (sense terminal) PPS PPS LABEL MAIN CIRCUIT TERMINAL t=0.6 CONTROL CIRCUIT TERMINAL t=0.6 P1 N1 N GT P EUP GUP EVP GVP EWP GWP RSTB TH1 UV W G B TH2 E GUN GVN GWN 2.5 1.5(2.5) 0.6–0.1 f6 f6 6 11 11 11 11 11 11 7.62 7.62 2.542.54 2.54 61 11 11 1 10 2.54 10 11 11 11 2.54 2.54 2.54 2.54 110–0.25 120 2222 60–0.5 12 13 6.42-R5 2-f4.5 MOUNTING HOLES OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Sep. 2000 MITSUBISHI IGBT MODULES CM50AD00-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation G-E Short C-E Short T C = 25°C PULSE (Note. 2) T C = 25°C PULSE (Note. 2) TC = 25°C Symbol Parameter Collector Current Emitter Current Conditions Unit V V A A A A W Rating 600 ±20 100 100 104 V CES VGES IC ICM IE (Note.1) IEM (Note.1) PC (Note.3) Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Repetitive peak reverse voltage Forward current 600 ±20 100 600 G-E Short C-E Short T C = 25°C PULSE (Note. 2) TC = 25°C Clamp diode part Clamp diode part Symbol Parameter Collector Current Conditions Unit V V A A W V A Rating V CES VGES IC ICM PC (Note.3) VRRM IFM (Note.3) Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing 800 220 500 1.0 × 103 3φ rectifying circuit 1/2 cycle at 60Hz, peak value, Non-repetitive Value for one cycle of surge current Symbol Parameter Conditions Unit Rating V V A A A VRRM Ea IO IFSM I2t VDRM VRRM IT(AV) PGM PG(AV) IFGM VFGM VRGM di/dt Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward current Peak gate forward voltage Peak gate reverse voltage Critical rate of rise of on-state Current Symbol Parameter Conditions Unit Rating V V A W W A V V A/µs MAXIMUM RATINGS (Tj = 25°C) INVERTER PART BRAKE PART CONVERTER PART THYRISTOR PART Tj Tj Tstg Viso Junction temperature Junction temperature Storage temperature Isolation voltage Mounting torque Weight –40 ~ +150 –40 ~ +125 –40 ~ +125 2500 0.98 ~ 1.47 140 Inverter, brake, converter part Thyristor part AC 1 min. Mounting M4 screw Typical value Symbol Parameter Conditions Unit Rating V N·m g COMMON RATING ITSM Surge (non-repetitive) on-state current Single-phase, half-wave 180° conduction IG =100mA, VD =400V , dIG /dt=1A/µs 800 800 100 1/2 cycle at 60Hz, peak value Non-repetitive 500 A

Sep. 2000 mA µA nF nF nF nC ns ns ns ns V ns µC °C/W °C/W Typ. V V MITSUBISHI IGBT MODULES CM50AD00-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE 0.5 2.8 5.0 3.8 1.0 120 300 200 300 2.8 110 1.2 2.2 V CE = VCES , VGE = 0V VGE = VGES , VCE = 0V Tj = 25°C Tj = 150°C VCC = 300V, IC = 50A, VGE = 15V VCC = 300V, IC = 50A VGE1 = VGE2 = 15V R G = 13Ω Resistive load IE = 50A, VGE = 0V IE = 50A, VGE = 0V diE / dt = – 100A / µs IGBT part, Per 1/6 module FWDi part, Per 1/6 module I C = 5.0mA, VCE = 10V IC = 50A, VGE = 15V (Note.4) VCE = 10V VGE = 0V 2.2 150 0.14 I CES IGES C ies C oes C res Q G td(on) tr td(off) tf VEC(Note.1) trr (Note.1) Q rr (Note.1) R th(j-c)Q R th(j-c)R Symbol Parameter Test conditions VGE(th) VCE(sat) Collector cutoff current Gate-emitter cutoff current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance Limits Min. Max. Unit 64.5 7.5 Collector cutoff current Gate-emitter cutoff current Input capacitance Output capacitance Reverse transfer capacitance T otal gate charge Forward voltage drop Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance V V 0.5 2.8 5.0 3.8 1.0 2.8 1.5 2.4 V CE = VCES , VGE = 0V VGE = VGES , VCE = 0V Tj = 25°C Tj = 150°C VCC = 300V , IC = 50A, VGE = 15V IF = 50A, Clamp diode part IGBT part Clamp diode part mA µA nF nF nF nC V °C/W °C/W 2.2 150 I CES IGES C ies C oes C res Q G VFM R th(j-c)Q R th(j-c)R Symbol Parameter T est conditions VGE(th) VCE(sat) Unit 64.5 7.5IC = 5.0mA, VCE = 10V IC = 50A, VGE = 15V (Note.4) VCE = 10V VGE = 0V Repetitive reverse current Forward voltage drop Thermal resistance V R = VRRM , Tj = 150°C IF = 50A Per 1/6 module mA V °C/W IRRM V FM R th(j-c) Symbol Parameter T est conditions 1.5 1.7 Typ. Limits Min. Max. UnitTyp. Limits Min. Max. ELECTRICAL CHARACTERISTICS (Tj = 25°C) INVERTER PART BRAKE PART CONVERTER PART

Sep. 2000 MITSUBISHI IGBT MODULES CM50AD00-12H MEDIUM POWER SWITCHING USE FLAT BASE, INSULATED TYPE IDRM IRRM ITM IGT VGT IH R th(j-c) Repetitive peak off-state current Repetitive peak reverse current On-state voltage Gate trigger current Gate trigger voltage Holding current Thermal resistance THYRISTOR PART dv/dt VD =800V VR =800V IT=50A, instantaneous means VD =6V , IT=1A VD =6V , IT=1A Tj=125°C, VD =540V , exp. waveformCritical rate of rise of off-state Voltage 1.30 100 1.3 mA mA V mA V mA °C/W Symbol Parameter Test conditions Unit Typ. Limits Min. Max. 500 — — V/ µs Resistance Temperature coefficient Measured between N-N1 m Ω %/°C 2.3 0.060 R Symbol Parameter Test conditions Unit Typ. Limits Min. Max. RESISTOR PART Resistance B Constant TC = 25°C Resistance at 25°C, 50°C (Note.5) kΩ K 100 4000 R TH B Symbol Parameter T est conditions UnitTyp. Limits Min. Max. THERMISTOR PART Note.1 IE, VEC , trr, Qrr, diE/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 2 Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3 Junction temperature (Tj) should not increase beyond 150°C. 4 Pulse width and repetition rate should be such as to cause negligible temperature rise.

5 B = (InR

1-InR2)/(1/T1-1/T2)R 1 : Resistance at T1(K) R 2 : Resistance at T2(K) *1 : Typical value is measured by using Shin-etsu Silicone “G-746”. —Contact thermal resistance Case to fin, Thermal compound applied*1 (1 module) °C/W0.035—R th(c-f) Symbol Parameter T est conditions Unit Typ. Limits Min. Max. COMMON RATING