CM500HA-34A

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1 July-2010

ç CM500HA-34A

• Flat base Type Copper (non-plating) base plate No accessory (terminal screw) attach
• RoHS Directive compliant Single APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm ç ç Tolerance otherwise specified ç Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 çç INTERNAL CONNECTION ç CE E G Tr1 Di1 ç

ç ç MITSUBISHI IGBT MODULES ç CM500HA-34A ç HIGH POWER SWITCHING USE ç ç INSULATED TYPE ç çç

2 July-2010

ABSOLUTE MAXIMUM RATINGS (T j=25 °C, unless otherwise specified) Symbol Item Conditions Rating Unit VCES Collector-emitter voltage G-E short-circuited 1700 V VGES Gate-emitter voltage C-E short-circuited ±20 V IC DC, T C=87 °C (Note.2) 500 ICRM Collector current Pulse, Repetitive (Note.3) 1000 A Ptot Total power dissipation T C=25 °C (Note.2, 4) 5000 W IE (Note.1) TC=25 °C (Note.2, 4) 500 IERM (Note.1) Emitter current (Free wheeling diode forward current) Pulse, Repetitive (Note.3) 1000 A Tj Junction temperature - -40 ~ +150 Tstg Storage temperature - -40 ~ +125 Visol Isolation voltage Terminals to base pl ate, RMS, f=60 Hz, AC 1 min 3500 V MECHANICAL CHARACTERISTICS Limits Symbol Item Conditions Min. Typ. Max. Unit Mt Main terminals M 6 screw 1.96 2.45 2.94 Mt Auxiliary terminals M 4 screw 0.98 1.18 1.47 Ms Mounting torque Mounting to heat sink M 6 screw 1.96 2.45 2.94 N·m m Weight - - 480 - g ec Flatness of base plate On the centerline X, Y (Note.5) ±0 - +100 μm ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified) Limits Symbol Item Conditions Min. Typ. Max. Unit ICES Collector-emitter cut-off current V CE=VCES, G-E short-circuited - - 1 mA IGES Gate-emitter leakage current ±V GE=VGES, C-E short-circuited - - 3 μA VGE(th) Gate-emitter threshold voltage I C=50 mA, VCE=10 V 5.5 7 8.5 V IC=500 A (Note.6) , T j =25 °C - 2.2 3.0 VCEsat Collector-emitter saturation voltage VGE=15 V T j =125 °C - 2.45 - V Cies Input capacitance - - 120 Coes Output capacitance - - 14 Cres Reverse transfer capacitance VCE=10 V, G-E short-circuited - - 2.6 nF QG Gate charge V CC=1000 V, IC=500 A, VGE=15 V - 3300 - nC td(on) Turn-on delay time - - 900 tr Rise time VCC=1000 V, I C=500 A, V GE=±15 V, - - 500 td(off) Turn-off delay time - - 700 tf Fall time RG=3.0 Ω, Inductive load - - 350 ns VEC (Note.1) Emitter-collector voltage I E=500 A (Note.6) , G-E short-circuited - 2.3 3.2 V trr (Note.1) Reverse recovery time V CC=1000 V, IE=500 A, VGE=±15 V, - - 650 ns Qrr (Note.1) Reverse recovery charge R G=3.0 Ω, Inductive load - 50 - μC Eon Turn-on switching energy per pulse V CC=1000 V, I C=IE=500 A, - 267.8 - Eoff Turn-off switching energy per pulse V GE=±15 V, R G=3.0 Ω, - 138.5 - Err (Note.1) Reverse recovery energy per pulse T j =125 °C, Inductive load - 98.1 - mJ rg Internal gate resistance T C=25 °C - 1.0 - Ω RG External gate resistance - 3.0 - 10 Ω THERMAL RESISTANCE CHARACTERISTICS Limits Symbol Item Conditions Min. Typ. Max. Unit Rth(j-c)Q Junction to case, IGBT part - - 25 K/kW Rth(j-c)D Thermal resistance (Note.2) Junction to case, FWDi part - - 42 K/kW Rth(c-s) Contact thermal resistance (Note.2) Case to heat sink, Thermal grease applied (Note.7) - 20 - K/kW

ç ç MITSUBISHI IGBT MODULES ç CM500HA-34A ç HIGH POWER SWITCHING USE ç ç INSULATED TYPE ç çç

3 July-2010

Note.1: Represent ratings and characteristics of the ant i-parallel, emitter-collector free wheeling diode (FWDi). Note.2: Case temperature (T C) and heat sink temperature (T s ) are defined on the each surface of base plate and heat sink just under the chips. (Refer to the figure of chip location) The heat sink thermal resistance {R th(s-a) } should measure just under the chips. Note.3: Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T jmax rating. Note.4: Junction temperature (T j ) should not increase beyond T jmax rating. Note.5: Base plate flatness measurement point is as in the following figure. Y X +: Convex -: Concave +: Convex Bottom Bottom Bottom -: Concave Note.6: Pulse width and repetition rate should be su ch as to cause negligible temperature rise. (Refer to the figure of test circuit) Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). CHIP LOCATION (Top view) Dimension in mm, tolerance: ±1 mm Tr1: IGBT, Di1: FWDi. Each mark points the center position of each chip.

ç ç MITSUBISHI IGBT MODULES ç CM500HA-34A ç HIGH POWER SWITCHING USE ç ç INSULATED TYPE ç çç

4 July-2010

TEST CIRCUIT AND WAVEFORMS VGE=15 V V IC C E Es G short- circuited V IE C E Es G VCEsat test circuit VEC test circuit ʙ t tftr td(on) iC 10 % 90 % 90 % vGE VCC iE iC RG -VGE +VGE -VGE Load ʙ ʙ ʙ 0 V 0 A vCE vGE 0 V td(off) t Irr Qrr =0.5×I rr ×trr 0.5×Irr t trr iE 0 A IE Switching characteristics test circuit and waveforms t rr , Q rr test waveform 0.1×ICM ICM VCC vCE iC t 0 ti 0.1×VCC 0.1×VCC VCC ICM vCE iC 0.02×ICM ti IEM vECiE t0 V ti t VCC 0 A IGBT Turn-on switching energy IGBT Turn-off switching energy FWDi Reverse recovery energy Turn-on, Turn-off switching and Reverse recove ry energy test waveforms (integral range) ç

ç ç MITSUBISHI IGBT MODULES ç CM500HA-34A ç HIGH POWER SWITCHING USE ç ç INSULATED TYPEç

5 July-2010

ç PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj =25 °C VGE=15 V COLLECTOR CURRENT I C (A) 200 400 600 800 1000 02468 1 0 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) 0 200 400 600 800 1000 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Tj =25 °C G-E short-circuited COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) 5 1 01 52 0 EMITTER CURRENT I E (A) 100 1000 0.5 1.5 2.5 3.5 GATE-EMITTER VOLTAGE V GE (V) EMITTER-COLLECTOR VOLTAGE V EC (V) Tj =125 °C Tj =25 °C Tj =125 °C Tj =25 °C IC=1000 A IC=500 A IC=200 A VGE=20 V 12 V 11 V 10 V 9 V 13 V 15 V

ç ç MITSUBISHI IGBT MODULES ç CM500HA-34A ç HIGH POWER SWITCHING USE ç ç INSULATED TYPE ç çç

6 July-2010

(TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=1000 V, VGE=±15 V, RG=3.0 Ω, Tj =125 °C INDUCTIVE LOAD VCC=1000 V, IC=500 A, VGE=±15 V, Tj =125 °C INDUCTIVE LOAD SWITCHING TIME (ns) 100 1000 10000 10 100 1000 SWITCHING TIME (ns) 100 1000 10000 11 0 COLLECTOR CURRENT I C (A) EXTERNAL GATE RESISTANCE R G (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=1000 V, VGE=±15 V, RG=3.0 Ω, Tj =125 °C INDUCTIVE LOAD, PER PULSE VCC=1000 V, IC/IE=500 A, VGE=±15 V, Tj =125 °C INDUCTIVE LOAD, PER PULSE SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) 100 1000 10 100 1000 SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) 100 1000 1 10 COLLECTOR CURRENT I C (A) EMITTER CURRENT I E (A) EXTERNAL GATE RESISTANCE R G (Ω) Eon Eoff Err Eon Eoff Err td(on) tr td(off) tf td(on) tr td(off) tf

ç ç MITSUBISHI IGBT MODULES ç CM500HA-34A ç HIGH POWER SWITCHING USE ç ç INSULATED TYPE ç çç

7 July-2010

CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) G-E short-circuited, Tj =25 °C IC=500 A, Tj =25 °C CAPACITANCE (nF) 0.1 100 1000 0.1 1 10 100 GATE-EMITTER VOLTAGE V GE (V) 0 1000 2000 3000 4000 5000 COLLECTOR-EMITTER VOLTAGE V CE (V) GATE CHARGE Q G (nC) FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) VCC=1000 V, VGE=±15 V, RG=3.0 Ω, Tj =125 °C INDUCTIVE LOAD Single pulse, T C=25°C trr (ns), Irr (A) 100 1000 10 100 1000 NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th(j-c) 0.001 0.01 0.1 Rth(j-c)Q =25 K/kW, Rth(j-c)D =42 K/kW EMITTER CURRENT I E (A) TIME (S) Cies Coes Cres VCC =800 V VCC =1000 V trr Irr

ç ç MITSUBISHI IGBT MODULES ç CM500HA-34A ç HIGH POWER SWITCHING USE ç ç INSULATED TYPE ç çç

8 July-2010

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