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Technical content
www.roithner-laser.com 1 CM4L5111A
- Light Emitting Diode
- Yolk color tone
- InGaN structure
- 5 mm clear epoxy package Maximum Rating (TCASE = 25°C) Parameter Symbol Values Unit Min. Max. Power Dissipation, DC PD 102 mW DC Forward Current* IF 30 mA Pulse Forward Current* IFP 100 mA Reverse Voltage VR 5.0 V Operating Temperature TOPR - 30 + 85 °C Storage Temperature TSTG - 40 + 100 °C Soldering Temperature (max 5s) TSOL + 260 °C * Duty cycle max. 10%, Pulse width max 10ms Electro-Optical Characteristics (TCASE = 25°C, IF = 20 mA) Parameter Symbol Values Unit Min. Typ. Max. Chromaticity Coordinates x 0.45 y 0.47 Forward Voltage VF 2.7 2.9 3.4 V Reverse Current (VR = 5V) VR 10 µA Luminous Intensity IV / cd Luminous Flux ΦV 7.7 8.2 lm Viewing Half Angle Ө1/2 7.5 deg. All dimensions in mm
Description
CM4L5111 is an InGaN based LED with a phosphorous coating, emitting a yolk light of high luminous flux (8.2 lm). It comes in a hermetically sealed clear 5 mm UV resistant epoxy resin. rev.1.0 06.09.17
www.roithner-laser.com 2 Performance Characteristics Forward Current vs. Forward Voltage Relative spectral distribution vs. Wavelength © All Rights Reserved The above specifications are for reference purpose only and subjected to change without prior notice