CM4957 CENTRAL | Alldatasheet
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Technical content
(Continued) CM4957 PNP HIGH FREQUENCY SILICON TRANSISTOR TO-72 CASE DATA SHEET
DESCRIPTION
The CENTRAL SEMICONDUCTOR CM4957 is a Silicon PNP RF Transistor, mounted in a hermetically sealed package, designed for high frequency amplifier and non-saturated switching applications. This device is a replacement for the 2N4957. MAXIMUM RATINGS (TA=25°C) S Y M B O L U N I T S Collector-Base Voltage V CBO 30 V Collector-Emitter Voltage V CEO 25 V Emitter-Base Voltage V EBO 3.0 V Collector Current - Continuous I C 30 mA Power Dissipation P D 200 mW Power Dissipation (TC=25°C) P D 300 mW Operating and Storage Junction Temperature T J,Tstg -65 to +200 °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS M I N TYP MAX UNITS ICBO V CB=10V 100 nA BVCBO I C=100µA 30 V BVCEO I C=1.0mA 25 V BVEBO I E=100µA 3.0 V hFE V CE=10V, IC=2.0mA 20 150 fT V CE=10V, IC=2.0mA, f=100MHz 1200 2500 MHz Ccb V CB=10V, IE=0, f=1.0MHz 1.6 2.0 pF hfe V CE=10V, IC=2.0mA, f=1.0kHz 20 200 Gpe V CE=10V, IC=4.0mA, f=450MHz 17 25 dB
C M 4 9 5 7 P N P H I GH FREQUENCY TRANSISTOR TO-72 CASE - MECHANICAL OUTLINE Lead Code: 1) Emitter 2) Base 3) Collector 4) Case M I NM A XM I NM A X A (DIA) 0.209 0.230 5.31 5.84 B (DIA) 0.175 0.195 4.45 4.95 C - 0.030 - 0.76 D 0.170 0.210 4.32 5.33 E 0.500 - 12.70 - F (DIA) 0.016 0.019 0.41 0.48 G (DIA) H J 0.036 0.046 0.91 1.17 K 0.028 0.048 0.71 1.22 TO-72 (REV: R1) DIMENSIONS SYMBOL INCHES MILLIMETERS 0.100 2.54 0.050 1.27 B D C E F LEAD #1 LEAD #2 LEAD #3 G H J K A 45° LEAD #4