CM450HA-5F MITSUBISHI | Alldatasheet

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Sep.1998 Dimensions Inches Millimeters A 3.82 97.0 B 3.15 80.0 C 0.69 17.5 D 1.14 29.0 E 1.04 26.5 F 1.89 48.0 G 0.63 16.0 H 0.24 6.0 J 0.26 6.7 Dimensions Inches Millimeters K 1.14 29.0 L 1.42 36.0 M 0.28 7.0 N 0.26 Dia. Dia. 6.5 P M4 Metric M4 Q M6 Metric M6 R 0.51 13.0 S 0.35 9.0 Description: Mitsubishi IGBT Modules are de- signed for use in switching appli- cations. Each module consists of one IGBT in a single configura- tion, with a reverse connected su- per-fast recovery free-wheel di- ode. All components and intercon- nects are isolated from the heat sinking baseplate, offering simpli- fied system assembly and thermal management. Features: u Low Drive Power u Low V CE(sat) u Discrete Super-Fast Recovery Free-Wheel Diodes u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u UPS u Forklift Ordering Information: Example: Select the complete nine digit module part number you desire from the table below - i.e. CM450HA-5F is a 250V (V CES ), 450 Ampere Single IGBT Module. Current Rating V CES Type Amperes Volts (x 50) CM 450 5 MITSUBISHI IGBT MODULES CM450HA-5F HIGH POWER SWITCHING USE INSULATED TYPE Outline Drawing and Circuit Diagram LABEL A B DE FG H J K L M (2 TYP.) E G E C N - DIA. (2 TYP.) Q - THD. C G E E R R S P - THD. (2 TYP.) C +1.0 –0.5 +1.0 –0.5

Sep.1998 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol CM450HA-5F Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E Short) V CES 250 Volts Gate-Emitter Voltage (C-E Short) V GES ±20 Volts Collector Current (TC = 25°C) I C 450 Amperes Peak Collector Current (Tj ≤ 150°C) I CM 900* Amperes Emitter Current (TC = 25°C) I E 450 Amperes Peak Emitter Current I EM 900* Amperes Maximum Collector Dissipation (TC = 25°C) P c 735 Watts Mounting Torque, M6 Main Terminal — 1.96 ~ 2.94 N · m Mounting Torque, M6 Mounting — 1.96 ~ 2.94 N · m Mounting Torque, M4 Terminal — 0.98 ~ 1.47 N · m Weight — 270 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Vrms *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V — — 1.0 mA Gate Leakage Current I GES VGE = VGES , VCE = 0V — — 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 45mA, VCE = 10V 3.0 4.0 5.0 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 450A, VGE = 10V, — 1.2 1.7 Volts IC = 450A, VGE = 10V, Tj = 150°C — 1.1 — Volts Total Gate Charge Q G VCC = 100V, IC = 450A, VGE = 10V — 1760 — nC Emitter-Collector Voltage V EC IE = 450A, VGE = 0V — — 2.0 Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies — — 132 nF Output Capacitance C oes VGE = 0V, VCE = 10V — — 6 nF Reverse Transfer Capacitance C res — — 4.5 nF Resistive Turn-on Delay Time t d(on) — — 1200 ns Load Rise Time t r VCC = 100V, IC = 450A, — — 2700 ns Switching Turn-off Delay Time t d(off) VGE1 = VGE2 = 10V, RG = 5.6Ω , — — 900 ns Times Fall Time t f Resistive Load — — 500 ns Diode Reverse Recovery Time t rr IE = 450A, diE/dt = -900A/µs — — 300 ns Diode Reverse Recovery Charge Q rr IE = 450A, diE/dt = -900A/µs — 7.6 — µC Thermal and Mechanical Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c) Per IGBT — — 0.17 °C/W Thermal Resistance, Junction to Case R th(j-c) Per Free Wheel Diode — — 0.23 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied — — 0.090 °C/W MITSUBISHI IGBT MODULES CM450HA-5F HIGH POWER SWITCHING USE INSULATED TYPE

Sep.1998 COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 012345 400 VGE = 15V 5.5 5.25 5.0 Tj = 25oC 200 600 1000 800 5.75 4.5 4.75 400 200 600 1000 800 GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 02468 1 0 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 400 600 1000 800200 2.0 1.5 1.0 0.5 VGE = 15V Tj = 25°C Tj = 125°C GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 5 10 15 Tj = 25°C IC = 180A IC = 900A IC = 450A 101 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 104 EMITTER CURRENT, I E, (AMPERES) Tj = 25°C COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE (TYPICAL) 10-1 100 102 100 101 102 103 VGE = 0V 101 C ies C oes C res COLLECTOR CURRENT, I C , (AMPERES) SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 102 103101 102 104 td(off) td(on) tr VCC = 100V VGE = ±10V R G = 5.6Ω Tj = 125°C tf EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 103 102 101 trr Irr 103 102 101 REVERSE RECOVERY CURRENT, I rr, (AMPERES) di/dt = -900A/µsec Tj = 25°C GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0123 VCC = 100V VCC = 50V IC = 450A MITSUBISHI IGBT MODULES CM450HA-5F HIGH POWER SWITCHING USE INSULATED TYPE

Sep.1998 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-110-2 100 10110-3 100 10-1 10-2 10-3 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.17°C/W TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-1 100 10110-3 10-2 100 10-1 10-2 10-3 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.23°C/W MITSUBISHI IGBT MODULES CM450HA-5F HIGH POWER SWITCHING USE INSULATED TYPE