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Publication Date : July 2012 < IGBT MODULES > CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE
- Flat base Type
- Copper base plate
- RoHS Directive compliance
- UL Recognized under UL1557, File E323585 Dual (Half-Bridge) *. DC current rating is limited by power terminals. APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm INTERNAL CONNECTION Tolerance otherwise specified Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 G1 E1 (ES1) Di1 Di2 Tr1 Tr2 C1C2E1 E2 (ES2)
< IGBT MODULES > CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Publication Date : July 2012 ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified) Symbol Item Conditions Rating Unit VCES Collector-emitter voltage G-E short-circuited 1200 V VGES Gate-emitter voltage C-E short-circuited ±20 V IC DC, T C=125 °C (Note.2, 4) 410 * ICRM Collector current Pulse, Repetitive (Note.3) 900 A Ptot Total power dissipation T C=25 °C (Note.2, 4) 3330 W IE (Note.1) T C=25 °C (Note.2, 4) 410 * IERM (Note.1) Emitter current Pulse, Repetitive (Note.3) 900 A Visol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V Tjmax Maximum junction temperature - 175 Tcmax Maximum case temperature (Note.4) 125 Tjopr Operating junction temperature - -40 ~ +150 Tstg Storage temperature - -40 ~ +125 ELECTRICAL CHARACTERISTICS (Tj =25 °C, unless otherwise specified) Limits Symbol Item Conditions Min. Typ. Max. Unit ICES Collector-emitter cut-off current V CE=VCES, G-E short-circuited - - 1.0 mA IGES Gate-emitter leakage current V GE=VGES, C-E short-circuited - - 0.5 μA VGE(th) Gate-emitter threshold voltage I C=45 mA, VCE=10 V 5.4 6.0 6.6 V IC=450 A (Note.5) , T j =25 °C - 1.80 2.25 VGE=15 V, Terminal, T j =125 °C - 2.05 - Refer to figure of test circuit T j =150 °C - 2.10 - V IC=450 A (Note.5) , T j =25 °C - 1.70 2.15 VGE=15 V, T j =125 °C - 1.90 - VCEsat Collector-emitter saturation voltage Chip T j =150 °C - 1.95 - V Cies Input capacitance - - 45 Coes Output capacitance - - 9.0 Cres Reverse transfer capacitance VCE=10 V, G-E short-circuited - - 0.75 nF QG Gate charge V CC=600 V, IC=450 A, VGE=15 V - 1050 - nC td(on) Turn-on delay time - - 800 tr Rise time VCC=600 V, IC=450 A, VGE=±15 V, - - 200 td(off) Turn-off delay time - - 600 tf Fall time RG=0 Ω, Inductive load - - 300 ns IE=450 A (Note.5) , T j =25 °C - 1.85 2.30 G-E short-circuited, Terminal, T j =125 °C - 1.85 - Refer to figure of test circuit T j =150 °C - 1.85 - V IE=450 A (Note.5) , T j =25 °C - 1.70 2.15 G-E short-circuited, T j =125 °C - 1.70 - VEC (Note.1) Emitter-collector voltage Chip T j =150 °C - 1.70 - V trr (Note.1) Reverse recovery time V CC=600 V, IE=450 A, VGE=±15 V, - - 300 ns Qrr (Note.1) Reverse recovery charge R G=0 Ω, Inductive load - 24 - μC Eon Turn-on switching energy per pulse V CC=600 V, IC=IE=450 A, - 54.9 - Eoff Turn-off switching energy per pulse V GE=±15 V, RG=0 Ω, - 48 - mJ Err (Note.1) Reverse recovery energy per pulse T j =150 °C, Inductive load - 32.4 - mJ RCC'+EE' Internal lead resistance Main terminals -chip, per switch, T C =25 °C - - 0.7 m Ω rg Internal gate resistance Per switch - 4.3 - Ω
< IGBT MODULES > CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Publication Date : July 2012 THERMAL RESISTANCE CHARACTERISTICS Limits Symbol Item Conditions Min. Typ. Max. Unit Rth(j-c)Q Junction to case, per IGBT - - 45 K/kW Rth(j-c)D Thermal resistance (Note.4) Junction to case, per FWDi - - 68 K/kW Case to heat sink, per 1/2 module, Rth(c-s) Contact thermal resistance (Note.4) Thermal grease applied (Note.6) - 18 - K/kW MECHANICAL CHARACTERISTICS Limits Symbol Item Conditions Min. Typ. Max. Unit Mt Main terminals M 6 screw 3.5 4.0 4.5 N·m Ms Mounting torque Mounting to heat sink M 6 screw 3.5 4.0 4.5 N·m m Weight - - 580 - g ec Flatness of base plate On the centerline X, Y (Note.7) -100 - +100 μm Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). 2. Junction temperature (T j ) should not increase beyond Tjmax rating. 3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed Tjmax rating. 4. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. Refer to figure of chip location. The heat sink thermal resistance should measure just under the chips. 5. Pulse width and repetition rate should be such as to cause negligible temperature rise. 6. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). 7. Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure. Y X +:Convex -:Concave 3 mm +:Convex -:Concave mounting side mounting side mounting side *. DC current rating is limited by power terminals. RECOMMENDED OPERATING CONDITIONS Limits Symbol Item Conditions Min. Typ. Max. Unit VCC (DC) Supply voltage Applied across C1-E2 - 600 850 V VGEon Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 13.5 15.0 16.5 V RG External gate resistance Per switch 0 - 8 Ω
< IGBT MODULES > CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Publication Date : July 2012 CHIP LOCATION (Top view) Dimension in mm, tolerance: ±1 mm Tr1/Tr2: IGBT, Di1/Di2: FWDi TEST CIRCUIT IC C2E1 E2 Es2 Es1 V Short- circuited VGE=15 V IC C2E1 E2Es2 Es1 Short- circuited VGE=15 V V IE C2E1 E2Es2 Es1 V Short- circuited Short- circuited IE C2E1 E2Es2 Es1 Short- circuited V Short- circuited Tr1 Tr2 Di1 Di2 VCEsat test circuit V EC test circuit
< IGBT MODULES > CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Publication Date : July 2012 TEST CIRCUIT AND WAVEFORMS t tftr td(on) iC 10% 90 % 90 % vGE VCC RG -VGE +VGE -VGE Load ～ ～ ～ 0 V 0 A vCE vGE 0 V td(off) t iE iC C2E1 Es1 Es2 Irr Qrr =0.5×I rr ×trr 0.5×I rr t trr iE 0 A IE Switching characteristics test circuit and waveforms t rr , Qrr test waveform 0.1×ICM ICM VCC vCE iC t 0 ti 0.1×VCC 0.1×VCC VCC ICM vCE iC 0.02×ICM ti IEM vECiE t0 V ti t VCC 0 A IGBT Turn-on switching energy IGBT Turn-off switching energy FWDi Reverse recovery energy Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
< IGBT MODULES > CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Publication Date : July 2012 PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj =25 °C (Chip) VGE=15 V (Chip) COLLECTOR CURRENT I C (A) 100 200 300 400 500 600 700 800 900 02468 1 0 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 100 200 300 400 500 600 700 800 900 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Tj =25 °C (Chip) G-E short-circuited (Chip) COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) 6 8 10 12 14 16 18 20 EMITTER CURRENT I E (A) 100 1000 GATE-EMITTER VOLTAGE V GE (V) EMITTER-COLLECTOR VOLTAGE V EC (V) Tj =125 °C Tj =25 °C Tj =125 °C Tj =25 °C Tj =150 °C Tj =150 °C IC=900 A IC=450 A IC=180 A VGE=20 V 12 V 11 V 10 V 9 V 13.5 V 15 V
< IGBT MODULES > CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Publication Date : July 2012 PERFORMANCE CURVES HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD VCC=600 V, IC=450 A, VGE=±15 V, INDUCTIVE LOAD SWITCHING TIME (ns) 100 1000 10 100 1000 SWITCHING TIME t d(on) , tr ( n s ) 100 1000 0.1 1 10 100 100 1000 10000 SWITCHING TIME t d(off) , tf (ns) COLLECTOR CURRENT I C (A) EXTERNAL GATE RESISTANCE R G (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD, PER PULSE VCC=600 V, IC/IE=450 A, VGE=±15 V, INDUCTIVE LOAD, PER PULSE SWITCHING ENERGY Eon ( m J ) REVERSE RECOVERY ENERGY (mJ) 100 10 100 1000 100 1000 SWITCHING ENERGY E off ( m J ) SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) 100 1000 0.1 1 10 100 COLLECTOR CURRENT I C (A) EMITTER CURRENT I E (A) EXTERNAL GATE RESISTANCE R G (Ω) td(on) td(off) tf td(on) tr tf td(off) Eoff Eon Err Eon Eoff Err tr
< IGBT MODULES > CM450DY-24S HIGH POWER SWITCHING USE INSULATED TYPE Publication Date : July 2012 PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) G-E short-circuited, Tj =25 °C VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD CAPACITANCE (nF) 0.1 100 0.1 1 10 100 Irr (A) 100 1000 10 100 1000 100 1000 10000 trr (ns) COLLECTOR-EMITTER VOLTAGE V CE (V) EMITTER CURRENT I E (A) GATE CHARGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) VCC =600 V, IC =450 A, T j =25 °C Single pulse, TC=25°C Rth(j-c)Q =45 K/kW, Rth(j-c)D =68 K/kW GATE-EMITTER VOLTAGE V GE (V) 0 500 1000 1500 NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th(j-c) 0.001 0.01 0.1 GATE CHARGE Q G (nC) TIME (S) Cies Coes Cres Irr trr
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