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< IGBT MODULES > CM450DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE

  • Flat base Type
  • Copper base plate (non-plating)
  • Tin plating pin terminals
  • RoHS Directive compliant Dual switch (Half-Bridge) ●Recognized under UL1557, File E323585 APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm TERMINAL t=0.8 SECTION A DETAIL B SECTION C-C INTERNAL CONNECTION Di1 Di2 Tr1 Th Tr2 NTC 1 2 3 4 5 7 10 Terminal code TH1 TH2 Es1 Cs1 C2E1 C2E1 Es2 Tolerance otherwise specified Division of Dimension Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 Publication Date : December 2013

< IGBT MODULES > CM450DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified) INVERTER PART IGBT/DIODE Symbol Item Conditions Rating Unit VCES Collector-emitter voltage G-E short-circuited 1200 V VGES Gate-emitter voltage C-E short-circuited ± 20 V IC Collector current DC, TC=107 °C (Note2, 4) 450 A ICRM Pulse, Repetitive (Note3) 900 Ptot Total power dissipation TC=25 °C (Note2, 4) 2775 W IE (Note1) Emitter current DC (Note2) 450 A IERM (Note1) Pulse, Repetitive (Note3) 900 MODULE Symbol Item Conditions Rating Unit Viso l Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 4000 V Tj max Maximum junction temperature Instantaneous event (overload) 175 °C TCmax Maximum case temperature (Note4) 125 Tj op Operating junction temperature Continuous operation (under switching) -40 ~ +150 °C Tstg Storage temperature - -40 ~ +125 ELECTRICAL CHARACTERISTICS (Tj =25 °C, unless otherwise specified) INVERTER PART IGBT/DIODE Symbol Item Conditions Limits Unit Min. Typ. Max. ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1.0 mA IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA VGE(th) Gate-emitter threshold voltage IC=45 mA, VCE=10 V 5.4 6.0 6.6 V VCE sat (Terminal) Collector-emitter saturation voltage IC=450 A, VGE=15 V, Tj =25 °C - 1.80 2.25 V Refer to the figure of test circuit Tj =125 °C - 2.00 - (Note5) Tj =150 °C - 2.05 - VCE sat (Chip) IC=450 A, Tj =25 °C - 1.70 2.15 V VGE=15 V, Tj =125 °C - 1.90 - (Note5) Tj =150 °C - 1.95 - Cies Input capacitance VCE=10 V, G-E short-circuited - - 45 nF Coes Output capacitance - - 9.0 Cres Reverse transfer capacitance - - 0.75 QG Gate charge VCC=600 V, IC=450 A, VGE=15 V - 945 - nC td(on) Turn-on delay time VCC=600 V, IC=450 A, VGE=±15 V, - - 800 ns tr Rise time - - 200 td(off) Turn-off delay time RG=0 Ω, Inductive load - - 600 tf Fall time - - 300 VEC (Note1) (Terminal) Emitter-collector voltage IE=450 A, G-E short-circuited, Tj =25 °C - 2.60 3.40 V Refer to the figure of test circuit Tj =125 °C - 2.16 - (Note5) Tj =150 °C - 2.10 - VEC (Note1) (Chip) IE=450 A, Tj =25 °C - 2.50 3.30 V G-E short-circuited, Tj =125 °C - 2.06 - (Note5) Tj =150 °C - 2.00 - trr (Note1) Reverse recovery time VCC=600 V, IE=450 A, VGE=±15 V, - - 300 ns Qrr (Note1) Reverse recovery charge RG=0 Ω, Inductive load - 12 - μC Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=450 A, - 35.8 - mJ Eoff Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, Tj =150 °C, - 52.4 - Err (Note1) Reverse recovery energy per pulse Inductive load - 27.9 - mJ RCC'+EE' Internal lead resistance Main terminals-chip, per switch, - - 0.7 mΩ TC=25 °C (Note2) rg Internal gate resistance Per switch - 4.3 - Ω Publication Date : December 2013

< IGBT MODULES > CM450DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS (cont.; Tj =25 °C, unless otherwise specified) NTC THERMISTOR PART Symbol Item Conditions Limits Unit Min. Typ. Max. R25 Zero-power resistance TC=25 °C (Note4) 4.85 5.00 5.15 kΩ ΔR/R Deviation of resistance R100=493 Ω, TC=100 °C (Note4) -7.3 - +7.8 % B(25/50) B-constant Approximate by equation (Note6) - 3375 - K P25 Power dissipation TC=25 °C (Note4) - - 10 mW THERMAL RESISTANCE CHARACTERISTICS Symbol Item Conditions Limits Unit Min. Typ. Max. Rth(j - c)Q Thermal resistance Junction to case, per Inverter IGBT (Note4) - - 54 K/kW Rth(j - c) D Junction to case, per Inverter DIODE (Note4) - - 86 Rth(c - s ) Contact thermal resistance Case to heat sink, per 1 module, - 15 - K/kW Thermal grease applied (Note4, 7) MECHANICAL CHARACTERISTICS Symbol Item Conditions Limits Unit Min. Typ. Max. Mt Mounting torque Main terminals M 6 screw 3.5 4.0 4.5 N·m Ms Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m m mass - - 350 - g ds Creepage distance Terminal to terminal 17 - - mm Terminal to base plate 18.5 - - da Clearance Terminal to terminal 10 - - mm Terminal to base plate 16.3 - - ec Flatness of base plate On the centerline X, Y (Note8) ±0 - +100 μm Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE) 2. Junction temperature (T j ) should not increase beyond Tjmax rating. 3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed Tjmax rating. 4. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. Refer to the figure of chip location. 5. Pulse width and repetition rate should be such as to cause negligible temperature rise. 6. )T T/( )R Rln(B ) / ( 50 25 50 2550 25 1 1−= , R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K] R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K] 7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). 8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure. Y X +:Convex -:Concave +:Convex -:Concave mounting side mounting side mounting side 9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs. "φ2.6×10 or φ2.6×12 B1 tapping screw" The length of the screw depends on thickness (t1.6~t2.0) of the PCB. Publication Date : December 2013

< IGBT MODULES > CM450DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE RECOMMENDED OPERATING CONDITIONS Symbol Item Conditions Limits Unit Min. Typ. Max. VCC (DC) Supply voltage Applied across C1-E2 terminals - 600 850 V VGEon Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 terminals 13.5 15.0 16.5 V RG External gate resistance Per switch 0 - 10 Ω CHIP LOCATION (Top view) Dimension in mm, tolerance: ±1 mm Tr1/Tr2: IGBT, Di1/Di2: DIODE, Th: NTC thermistor Publication Date : December 2013

< IGBT MODULES > CM450DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE TEST CIRCUIT AND WAVEFORMS VCC -VGE +VGE -VGE vCE vGE 0 iE iC 6,7 Load RG t tf tr td(on) iC 10% 90 % 90 % vGE ～ ～ ～ 0 V 0 A td(off) t Irr Qrr =0.5×Irr ×trr 0.5×Irr t trr iE 0 A IE Switching characteristics test circuit and waveforms trr , Qrr characteristics test waveform 0.1×ICM ICM VCC vCE iC t 0 ti 0.1×VCC 0.1×VCC VCC ICM vCE iC t 0 0.02×ICM ti IEM vEC iE t 0 V ti t VCC 0 A IGBT Turn-on switching energy IGBT Turn-off switching energy DIODE Reverse recovery energy Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) TEST CIRCUIT V Short- circuited 6,7 IC 3 VGE=15V VGE=15V

5 Short-

6,7 IC V V Short- circuited 6,7 IE Short- circuited 6,7 IE V Short- circuited Tr1 Tr2 Di1 Di2 VCEsat characteristics test circuit VEC characteristics test circuit Publication Date : December 2013

< IGBT MODULES > CM450DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Tj =25 °C (Chip) VGE=15 V (Chip) COLLECTOR CURRENT I C (A) 100 200 300 400 500 600 700 800 900 0 2 4 6 8 10 COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) 0.5 1.5 2.5 3.5 0 100 200 300 400 500 600 700 800 900 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Tj =25 °C (Chip) G-E short-circuited (Chip) COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (V) 6 8 10 12 14 16 18 20 EMITTER CURRENT I E (A) 100 1000 0 0.5 1 1.5 2 2.5 3 3.5 4 GATE-EMITTER VOLTAGE V GE (V) EMITTER-COLLECTOR VOLTAGE V EC (V) Tj =150 °C Tj =125 °C Tj =25 °C Tj =25 °C IC=900 A IC=450 A IC=180 A VGE=20 V 12 V 11 V 10 V 9 V 15 V Tj =150 °C Tj =125 °C Publication Date : December 2013

< IGBT MODULES > CM450DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD VCC=600 V, VGE=±15 V, IC=450 A, INDUCTIVE LOAD SWITCHING TIME t d(on), tf, td(off) (ns) 100 1000 10000 10 100 1000 100 SWITCHING TIME t r (ns) SWITCHING TIME t f, td(off) (ns) 100 1000 10000 0.1 1 10 100 100 1000 SWITCHING TIME t r, t d(on) (ns) COLLECTOR CURRENT I C (A) EXTERNAL GATE RESISTANCE R G (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD, PER PULSE VCC=600 V, VGE=±15 V, IC/IE=450 A, INDUCTIVE LOAD, PER PULSE SWITCHING ENERGY (mJ) 0.1 100 10 100 1000 100 1000 REVERSE RECOVERY ENERGY (mJ) SWITCHING ENERGY E off (mJ) REVERSE RECOVERY ENERGY (mJ) 100 0.01 0.1 1 10 100 100 1000 SWITCHING ENERGY E on (mJ) COLLECTOR CURRENT I C (A) EMITTER CURRENT I E (A) EXTERNAL GATE RESISTANCE R G (Ω) tr tf td(o ff ) td(o n) td(o n) tr tf td(o ff ) Eon Eoff Err Eon Eoff Err Publication Date : December 2013

< IGBT MODULES > CM450DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART CAPACITANCE CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) G-E short-circuited, Tj =25 °C VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD CAPACITANCE (nF) 0.01 0.1 100 0.1 1 10 100 trr (ns), Irr (A) 100 1000 10 100 1000 COLLECTOR-EMITTER VOLTAGE V CE (V) EMITTER CURRENT I E (A) GATE CHARGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) VCC=600 V, IC=450 A, Tj=25 °C Single pulse, TC=25 °C Rth(j - c)Q =54 K/kW, Rth(j - c) D =86 K/kW GATE-EMITTER VOLTAGE V GE (V) 0 500 1000 1500 NORMALIZED TRANSIENT THERMAL RESISTANCE Z th(j - c) 0.001 0.01 0.1 GATE CHARGE QG (nC) TIME (S) trr Irr Cies Coes Cres Publication Date : December 2013

< IGBT MODULES > CM450DX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES NTC thermistor part TEMPERATURE CHARACTERISTICS (TYPICAL) RESISTANCE R (kΩ) 0.1 100 -50 -25 0 25 50 75 100 125 TEMPERATURE T (°C) Publication Date : December 2013

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