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Jul. 2009 MITSUBISHI IGBT MODULES CM450DX-24A HIGH POWER SWITCHING USE CM450DX-24A ¡Dual ¡Flatbase Type / Insulated Package / Copper (non-plating) base plate ¡RoHS Directive compliant APPLICATION General purpose Inverters, Servo Amplifiers, Power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 4-φ5.5 MOUNTING HOLES ˎ18.8 ˎ15 ˎ45.48 ˎ41.66 (102.25) ˎ95 ˎ72.14 ˎ68.34 (7.75) 3.5 TERMINAL t = 0.8 (S = 3/1) SECTION A (S = 3/1) (7.4) 1.2 1.5 12.5 φ2.5 φ4.3 φ2.1 (3.81) 1.15 0.65 ˎPin positions with tolerance φ0.5 22(14) (14) (4.2) (13.5) (13.5) ˎ58.4 6 6 121.7 110 ±0.5 50 ±0.5 57.5 94.5 137 152 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 212019181716151413121110987654321 6.5 A (21.14) 4-M6 NUTS(5.4) 12.5 (SCREWING DEPTH) 17+1 -0.5 (3) 0.8 (20.5) Di1 Di2 NTC Th Tr2 Tr1 TH1(1) E1(16) C1(22)G1(15) TH2(2) E2(39) G2(38) E2(47) E1C2 (24) E1C2 (23)C1(48) LABEL CIRCUIT DIAGRAM Division of Dimension 0.5 to 3 over 3 to 6 over 6 to 30 over 30 to 120 over 120 to 400 Tolerance ±0.2 ±0.3 ±0.5 ±0.8 ±1.2 5PMFSBODFPUIFSXJTFTQFDJGJFE

Jul. 2009 MITSUBISHI IGBT MODULES CM450DX-24A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) INVERTER PART Symbol Parameter Conditions Rating Unit VCES VGES IC ICRM PC IE (Note.3) IERM (Note.3) Tj Tstg Viso Collector-emitter voltage Gate-emitter voltage Collector current Maximum collector dissipation Emitter current (Free wheeling diode forward current) Junction temperature Storage temperature Isolation voltage Base plate flatness Torque strength Torque strength Weight G-E Short C-E Short DC, T C = 90°C Pulse T C = 25°C TC = 25°C Pulse Terminals to base plate, f = 60Hz, AC 1 minute On the centerline X, Y Main terminals M6 screw Mounting M5 screw (Typical) 1200 ±20 450 900 2840 450 900 –40 ~ +150 –40 ~ +125 2500 ±0 ~ +100 3.5 ~ 4.5 2.5 ~ 3.5 330 V A W A Vrms µm N·m g (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1, 5) (Note. 4) (Note. 8) Note. 8: Base plate flatness measurement point is as in the following figure. )FBUTJOLTJEF )FBUTJOLTJEF ɿDPOWFY –ɿDPODBWF

Jul. 2009 MITSUBISHI IGBT MODULES CM450DX-24A HIGH POWER SWITCHING USE ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) INVERTER PART Limits UnitMin. Typ. Max. ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) VEC(Note.3) Rlead Rth(j-c)Q Rth(j-c)R Rth(c-f) RGint RG Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Module lead resistance Thermal resistance (Junction to case) Contact thermal resistance (Case to heat sink) Internal gate resistance External gate resistance V CE = VCES, VGE = 0V IC = 45mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 450A, VGE = 15V IC = 450A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 450A, VGE = 15V VCC = 600V, IC = 450A VGE = ±15V, RG = 0.68Ω Inductive load (IE = 450A) IE = 450A, VGE = 0V IE = 450A, VGE = 0V, chip Main terminals-chip, per switch per IGBT per free wheeling diode Thermal grease applied per 1 module per switch 2.0 2.2 1.9 2000 2.6 2.5 0.8 0.015 2.0 3.0 0.5 2.6 5.9 1.4 650 250 700 600 250 3.4 0.044 0.078 2.6 5.2 6.8 1.4 2.8 0.68 mA V µA V nF nC ns µC V mΩ K/W Ω T j = 25°C Tj = 125°C Chip TC = 25°C TC = 125°C (Note. 1) (Note. 1) (Note. 6) Symbol Parameter Conditions (Note. 2) (Note. 6) NTC THERMISTOR PART Limits UnitMin. Typ. Max. R ∆R/R B (25/50) P25 Zero power resistance Deviation of resistance B constant Power dissipation T C = 25°C TC = 100°C, R100 = 493Ω Approximate by equation T C = 25°C 5.00 3375 5.15 +7.8 4.85 –7.3 kΩ K mW (Note. 7) Symbol Parameter Conditions Note.1: Case temperature (T C), heat sink temperature (T f) measured point is just under the chips. (Refer to the figure of the chip location.) 2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K). 3: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). 4: Pulse width and repetition rate should be such that the device junction temperature (T j) dose not exceed Tjmax rating. 5: Junction temperature (T j) should not increase beyond 150 °C. 6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for V CE(sat) and VEC) R25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K] R50 T25 T50

Jul. 2009 MITSUBISHI IGBT MODULES CM450DX-24A HIGH POWER SWITCHING USE Chip Location (Top view) Dimensions in mm (Tolerance: ± 1mm) Each mark points the center position of each chip. Tr1/Tr2: IGBT, Di1/Di2: FWDi, Th: NTC thermistor (121.7) (152) (110) 28.2 42.0 51.6 22.7 26.9 35.9 49.1 72.7 85.9 99.1 (50) (62) LABEL SIDE 26.6 43.9Di1 Di1 Di1 Di2 Di2 Di2 Tr1 Tr1 Tr1 Tr Th 2T r 2 T r 2 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 212019181716151413121110987654321

Jul. 2009 VCE(sat) test circuit Tr1T r2 ICVGE = 15V E1C2 VGE = 0V E1(E1s) C1(C1s) E2(E2s) V ICVGE = 15V E1C2 VGE = 0V E1(E1s) E2(E2s) C1(C1s) V IEVGE = 0V E1C2 VGE = 0V E1(E1s) C1(C1s) E2(E2s) V IEVGE = 0V E1C2 VGE = 0V E1(E1s) E2(E2s) C1(C1s) V Di2 VEC test circuit Di1 trr, Qrr test waveform t IE trr Irr 1/2 ✕ Irr Qrr = 1/2 ✕ Irr ✕ trr Switching time test circuit and waveforms VCC+ IC VCE IEArm RG –VGE +VGE –VGE Load 0V VGE VGE IC td(on) td(off) tr tf 90% 10% 90% 0% t t MITSUBISHI IGBT MODULES CM450DX-24A HIGH POWER SWITCHING USE

Jul. 2009 MITSUBISHI IGBT MODULES CM450DX-24A HIGH POWER SWITCHING USE PERFORMANCE CURVES 900 800 700 600 500 400 300 200 100 100 24681 3579 Tj = 25°CVGE = 20V 3.5 2.5 1.5 0.5 0 100 200 300 400 500 600 700 800 900 Tj = 25°C Tj = 125°C VGE = 15V 206 8 10 12 14 16 18 Tj = 25°C IC = 900A IC = 450A IC = 180A 10–1 2 10035 7 2 10135 7 2 10235 7 VGE = 0V 100 10–1 103 101 102 101 100 102 103 Cies Coes Cres 102 101 0 0.5 1 1.5 2 2.5 3 3.5 4 103 101 10223 5 7 10323 5 7 Conditions: VCC = 600V VGE = ±15V RG = 0.68Ω Tj = 125°C Inductive load td(off) td(on) tf tr Tj = 25°C Tj = 125°C OUTPUT CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Inverter part EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE CHARACTERISTICS (TYPICAL) Inverter part CAPACITANCE (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)EMITTER CURRENT IE (A)SWITCHING TIME (ns)

Jul. 2009 MITSUBISHI IGBT MODULES CM450DX-24A HIGH POWER SWITCHING USE 102 101 100 103 102 101 10–1 10057 10123 5 723 103 102 100 Conditions: VCC = 600V VGE = ±15V RG = 0.68Ω Tj = 25°C Inductive load 101 101 10257 10323 5 723 trr Irr td(off) td(on) 0 500 1000 1500 2000 2500 30000 VCC = 400V VCC = 600V IC = 450A 10–3 100 10–2 10–1 10–5 23 5 7 10–4 23 5 7 10–3 23 5 7 10–2 23 5 7 10–1 23 5 7 100 23 5 7 101 Inverter IGBT part : Per unit base = Rth(j–c) = 0.044K/W Inverter FWDi part : Per unit base = Rth(j–c) = 0.078K/W Conditions: VCC = 600V VGE = ±15V IC = 450A Tj = 125°C Inductive load 101 10257 10323 5 723 Eoff Eon Err Conditions: V CC = 600V VGE = ±15V RG = 0.68Ω Tj = 125°C Inductive load 103 101 100 102 10–1 10057 10123 5 723 tr tf Eoff Eon Err Conditions: VCC = 600V VGE = ±15V IC, IE = 450A Tj = 125°C Inductive load Single pulse T C = 25°C HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part SWITCHING LOSS (mJ/pulse) GATE RESISTANCE RG (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part SWITCHING TIME (ns) GATE RESISTANCE RG (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part SWITCHING LOSS (mJ/pulse) lrr (A), trr (ns) COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) REVERSE RECOVERY CHARACTERISTICS OF FREE WHEELING DIODE (TYPICAL) Inverter part EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) Inverter part GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j–c) TIME (s)