CM400HU-24H_09 MITSUBISHI | Alldatasheet

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Feb. 2009 MITSUBISHI IGBT MODULES CM400HU-24H HIGH POWER SWITCHING USE INSULATED TYPE

  • Insulated Type
  • 1-element in a pack
  • UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm CM400HU-24H LABEL 20.5 107 13.5 2926 93 ±0.25(7) 189 12.55 48 ±0.25 (7) 17.2 19.1 21.15 24.35 9.5 6.5 23 6 23 A C B –0.5 –0.5 CEE G CM G E CE CIRCUIT DIAGRAM NUTS A (6.8) (3.2) B (7.2) (4) C (14) (7.2) TC measured point 2-M8NUTS2-M4NUTS 4-φ6.5 MOUNTING HOLES

Feb. 2009 MITSUBISHI IGBT MODULES CM400HU-24H HIGH POWER SWITCHING USE INSULATED TYPE V V VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 600V, IC = 400A, VGE = 15V VCC = 600V, IC = 400A VGE = ±15V RG = 0.78Ω Resistive load I E = 400A, VGE = 0V IE = 400A, die / dt = –800A / µs Junction to case, IGBT part Junction to case, FWDi part Case to heat sink, conductive grease applied (Note 6) I C = 40mA, VCE = 10V IC = 400A, VGE = 15V (Note 4) VCE = 10V VGE = 0V Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance (Note 5) Contact thermal resistance Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight V GE = 0V VCE = 0V TC = 25°C Pulse (Note 1) T C = 25°C Pulse (Note 1) T C = 25°C Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M8 screw Mounting M6 screw Auxiliary terminals M4 screw Typical value Collector current Emitter current 1200 ±20 400 800 400 800 2100 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 450 MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified.) Symbol Item Conditions Unit Ratings V V A A A A W Vrms N·m N·m N·m g V CES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Min Typ Max 0.5 3.7 250 350 350 350 3.2 300 0.06 0.09 mA µA nF nF nF nC ns ns ns ns V ns µC K/W K/W K/W 2.9 2.85 1500 2.2 0.02 I CES IGES Cies Coes Cres QG td (on) tr td (off) tf VEC(Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified.) Symbol Item Test Conditions VGE(th) VCE(sat) Limits Unit 64.5 Note 1. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 2. IE, IEM, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Case temperature (T C) measured point is shown in page OUTLINE DRAWING. 6. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. 7.5

Feb. 2009 MITSUBISHI IGBT MODULES CM400HU-24H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 800 600 400 200 0 201020 468 1 2 1 41 61 8 VCE = 10V Tj = 25°C Tj = 125°C 200 400 600 800 Tj = 25°C Tj = 125°C VGE = 15V 102 103 Tj = 25°C 800 600 400 200 0 10510 23 4 6789 VGE = 20 (V) T j = 25°C 0 201020 468 1 2 1 41 61 8 Tj = 25°C IC = 800A IC = 400A IC = 160A 100 101 102 10035 7 2 10135 7 2 10235 7 Cies VGE = 0V Coes Cres

Feb. 2009 MITSUBISHI IGBT MODULES CM400HU-24H HIGH POWER SWITCHING USE INSULATED TYPE 101 10223 5 7 10323 5 7 101 102 103 100 101 102 7–di/dt = 800A/µs Tj = 25°C trr lrr 101 10223 5 7 10323 5 7 101 102 103 7 td(off) VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C td(on) tf tr 101 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Per unit base = Rth(j – c) = 0.06K/W 101 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Per unit base = Rth(j – c) = 0.09K/W 0 400 800 1200 1600 2000 VCC = 400V VCC = 600V IC = 400A TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TIME (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) REVERSE RECOVERY TIME trr (ns) EMITTER CURRENT IE (A) REVERSE RECOVERY CURRENT Irr (A) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c)