CM400HU-24F

CM400HU-24F_09 MITSUBISHI | Alldatasheet

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Feb. 2009 4–φ6.5 MOUNTING HOLES 2–M8NUTS2–M4NUTS E G EC G E CE CM 12.55 9.5 20.5 107 93±0.25 48±0.25 26+1 –0.5 34+1 –0.5 24.35 8.5 21.15 8.5 19.1 6.5 17.2 6.5 13.5 29 6.5 23 6 23 LABEL CIRCUIT DIAGRAM Tc measured point RTC CM400HU-24F APPLICATION General purpose inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM400HU-24F HIGH POWER SWITCHING USE ¡Insulated Type ¡1-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Feb. 2009 V V W Vrms N • m N • m N • m g VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V VCC = 600V, IC = 400A, VGE = 15V VCC = 600V, IC = 400A VGE = ±15V RG = 0.78Ω, Inductive load IE = 400A IE = 400A, VGE = 0V IGBT part FWDi part Case to heat sink, Thermal compound applied*2 Case temperature measured point is just under the chips IC = 40mA, VCE = 10V IC = 400A, VGE = 15V VCE = 10V VGE = 0V 1200 ±20 400 800 400 800 1600 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 450 MITSUBISHI IGBT MODULES CM400HU-24F HIGH POWER SWITCHING USE A A 2.4 160 6.8 4.0 300 100 600 300 350 3.2 0.078 0.09 0.045* 7.8 mA µA nF nC µC V K/W Ω 1.8 1.9 4400 23.6 0.02 0.78 V ns ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance*1 ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Symbol Parameter VGE(th) VCE(sat) Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse (Note 2) TC = 25°C Pulse (Note 2) TC = 25°C Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M8 screw Mounting M6 screw G(E) Terminal M4 screw Typical value Symbol Parameter Collector current Emitter current Conditions UnitRatings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max. MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Test conditions Tj = 25°C Tj = 125°C

Feb. 2009 MITSUBISHI IGBT MODULES CM400HU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES VGE = 20V Tj = 25°C 9.5 8.5 800 500 200 600 700 400 300 100 00 0.5 1 1.5 2 2.5 3 3.5 4 2.5 1.5 0.5 00 200 400 600 800 Tj = 25°C Tj = 125°C VGE = 15V 101 102 103 0 0.5 1 1.5 2 2.5 3 3.5 Tj = 25°C 0 2068 1 2 1610 14 18 IC = 800A IC = 400A IC = 160A Tj = 25°C 10–1100 101 102 103 2 10035 7 2 10135 7 2 10235 7 VGE = 0V Cies Coes Cres 101 10257 10323 5 7 101 102 100 Conditions: VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C Inductive load td(off) td(on) tf tr OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A)

Feb. 2009 MITSUBISHI IGBT MODULES CM400HU-24F HIGH POWER SWITCHING USE 101 10223 5 7 10323 5 7 101 102 103 trr Irr 0 2000 4000 60001000 3000 5000 VCC = 400V VCC = 600V IC = 400A 101 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Conditions: VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 25°C Inductive load REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) IGBT part: Per unit base = Rth(j–c) = 0.078K/W FWDi part: Per unit base = R th(j–c) = 0.09K/W REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A)