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-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1045-A 1 of 8 CM400HG-130H

  • High Insulated Type
  • 1-element in a Pack
  • AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm Prepared by Approved by K.Kurachi I.Umezaki Mar.-1-2011 Revision: A

-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1045-A 2 of 8 MAXIMUM RATINGS Symbol Item tinU sgnitaR snoitidnoC Tj = -40 °C 5800 Tj = +25 °C 6300 VCES Collector-emitter voltage VGE = 0 V Tj = +125 °C 6500 V VGES Gate-emitter voltage VCE = 0 V, Tj V 02 ± C° 52 = IC T ,CD c A 004 C° 08 = ICM Collector current Pulse (Note 1) A 008 IE A 004 CD IEM Emitter current (Note 2) Pulse (Note 1) A 008 Pc Maximum power dissipation (Note 3) Tc W 0095 trap TBGI ,C° 52 = Viso Isolation voltage RMS, sinusoidal, f = 60 Hz, t = 1 min. 10200 V Ve Partial discharge extinction voltage RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC 5100 V Tj Junction temperature −40 ~ +150 °C Top Operating temperature −40 ~ +125 °C Tstg Storage temperature −40 ~ +125 °C Tpsc Maximum short circuit pulse width VCC =4500V, VCE ≤ VCES, VGE =15V, Tj =125°C 10 µs

ELECTRICAL CHARACTERISTICS

Limits Symbol snoitidnoC metI Min Typ Max Unit Tj = 25 °C — — 7 ICES Collector cutoff current VCE = VCES, VGE = 0 V Tj = 125 °C — 20 60 mA VGE(th) Gate-emitter threshold voltage VCE = 10 V, IC = 40 mA, Tj = 25 °C 5.0 6.0 7.0 V IGES Gate leakage current VGE = VGES, VCE = 0 V, Tj = 25 °C -0.5 — 0.5 µA Cies Input capacitance — 82 — nF Coes Output capacitance — 5.0 — nF Cres Reverse transfer capacitance VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25 °C — 1.4 — nF Qg Total gate charge VCC = 3600 V, IC = 400 A VGE = ±15 V, Tj = 25 °C — 6.6 — µC VCE(sat) Collector-emitter saturation voltage IC = 400 A (Note 4) VGE = 15 V Tj = 125 °C — 4.60 — V td(on) Turn-on delay time — 1.20 — µs tr Turn-on rise time — 0.35 — µs Eon(10%) Turn-on switching energy (Note 5) VCC = 3600 V, IC = 400 A VGE = ±15 V, RG(on) = 15 Ω Tj = 125 °C, Ls = 150 nH t(IGBT_off) = 60 µs (Note 6) , Inductive load — 3.00 — J/P td(off) Turn-off delay time — 8.20 — µs tf Turn-off fall time — 0.50 — µs tf2 Turn-off fall time 3.10 — µs Eoff(10%) Turn-off switching energy (Note 5) VCC = 3600 V, IC = 400 A VGE = ±15 V, RG(off) = 50 Ω Tj = 125 °C, Ls = 150 nH Inductive load — 2.70 — J/P VEC Emitter-collector voltage (Note 2) IE = 400 A (Note 4) VGE = 0 V Tj = 125 °C — 3.60 — V trr Reverse recovery time (Note 2) — 1.00 — µs trr2 Reverse recovery time (Note 2) 2.40 — µs Qrr Reverse recovery charge (Note 2) Cµ — 047 — Erec(10%) Reverse recovery energy (Note 2), (Note 5) VCC = 3600 V, IE = 400 A VGE = ±15 V, RG(on) = 15 Ω Tj = 125 °C, Ls = 150 nH t(IGBT_off) = 60 µs (Note 6) , Inductive load — 1.40 — J/P

-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1045-A 3 of 8 THERMAL CHARACTERISTICS Limits snoitidnoC metI lobmyS Min Typ Max Unit Rth(j-c)Q Thermal resistance Junction to Case, IGBT part — — 21.0 K/kW Rth(j-c)R Thermal resistance Junction to Case, FWDi part — — 33.0 K/kW Rth(c-s) Contact thermal resistance Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm — 9.0 — K/kW MECHANICAL CHARACTERISTICS Limits snoitidnoC metI lobmyS Min Typ Max Unit Mt m·N 0.51 — 0.7 wercs slanimret niaM :8M Ms m·N 0.6 — 0.3 wercs gnitnuoM :6M Mt Mounting torque M4: Auxiliary terminals screw 1.0 — 3.0 N·m gk — 00.1 — ssaM m — — — 006 xedni gnikcart evitarapmoC ITC da mm — — 62 ecnaraelC dS mm — — 65 ecnatsid egapeerC LP CE Hn — 72 — ecnatcudni yarts citisaraP RCC’+EE’ Internal lead resistance Tc m — 91.0 — C° 52 = Ω Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). Note 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Note 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C). Note 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Note 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. Note 6. t(IGBT_off) definition is shown as follows. t(IGBT_off) time IC

-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1045-A 4 of 8 Fig. ２ – Definitions of switching times & energies of IGBT part Fig. ３ – Definitions of reverse recovery charge & energy of FWDi part Eoff = ic•vce dt tf2 td(off) 10%VCE 90%IC 10%IC 90%VGE 50%IC di dt t3 t4 Eon = ic•vce dt ton tr td(on) VGE IC VCE 90%IC 10%IC 10%VCE 10%VGE t1 t2 VCC tf = (0.9ic − 0.1ic) / (di/dt) toff = td(off) + tf Qrr = – ie dt Erec = – ie•vec dt di/dt Irr VEC (VR) IE (IF) 10%VEC 10%IE di dt t5 t6 trr2 trr

-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1045-A 5 of 8 PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 200 400 600 800 0 2 4 6 8 Collector - Emitter Voltage [V] Collector Current [A] VGE = 8V Tj = 125°C VGE = 20V VGE = 10VVGE = 12V VGE = 15V COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 200 400 600 800 024 6 8 Collector-Emitter Saturation Voltage [V] Collector Current [A] Tj = 25°C VGE = 15V Tj = 125°C TRANSFER CHARACTERISTICS (TYPICAL) 200 400 600 800 024 6 8 10 12 Gate - Emitter Voltage [V] Collector Current [A] Tj = 125°C Tj = 25°C VCE = 20V FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 200 400 600 800 024 6 8 Emitter-Collector Voltage [V] Emitter Current [A] Tj = 25°CTj = 125°C

-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1045-A 6 of 8 PERFORMANCE CURVES cCAPACITANCE CHARACTERISTICS (TYPICAL) 100 1000 0.1 1 10 100 Collector-Emitter Voltage [V] Capacitance [nF] Cies VGE = 0V, Tj = 25°C f = 100kHz Coes Cres HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 0 200 400 600 800 1000 Collector Current [A] Switching Energies [J/P] Erec VCC = 3600V, VGE = ±15V RG(on) = 15 Ω, RG(off) = 50 Ω Tj = 125°C, Inductive load Eoff Eon GATE CHARGE CHARACTERISTICS (TYPICAL) -15 -10 0 2 4 6 8 10 Gate Charge [µC] Gate-Emitter Voltage [V] VCE = 3600V, IC = 400A Tj = 25°C HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 0 20 40 60 80 100 120 Gate Resistance [Ω] Switching Energies [J/P] Erec VCC = 3600V, IC = 400A VGE = ±15V, Tj = 125°C Inductive load Eoff Eon

-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1045-A 7 of 8 PERFORMANCE CURVES HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 0.1 100 10 100 1000 10000 Collector Current [A] Switching Times [µs] tf VCC = 3600V, VGE = ±15V RG(on) = 15 Ω, RG(off) = 50 Ω Tj = 125°C, Inductive load tr td(on) td(off) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 0.2 0.4 0.6 0.8 1.2 0.001 0.01 0.1 1 10 Time [s] Normalized Transient Thermal impedance Rth(j-c)Q = 21 K/kW Rth(j-c)R = 33 K/kW FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 100 10 100 1000 10000 Emitter Current [A] Reverse Recovery Time [µs] 100 1000 10000 Reverse Recovery Current [A] trr VCC = 3600V, VGE = ±15V RG(on) = 15 Ω, RG(off) = 50 Ω Tj = 125°C, Inductive load Irr = −∑ − exp1RZ i tn i)cj(th )t( τ 1 2 3 4 Ri [K/kW] 0.0059 0.0978 0.6571 0.2392 τi [sec] 0.0002 0.0074 0.0732 0.4488

-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVM-1045-A 8 of 8 PERFORMANCE CURVES REVERSE BIAS SAFE OPERATING AREA (RBSOA) 200 400 600 800 1000 1200 0 2000 4000 6000 8000 Collector-Emitter Voltage [V] Collector Current [A] VCC ≤ 4500V, VGE = ±15V Tj = 125°C, RG(off) ≥ 50 Ω FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 200 400 600 800 1000 1200 0 2000 4000 6000 8000 Collector-Emitter Voltage [V] Reverse Recovery Current [A] VCC ≤ 4500V, di/dt ≤ 2000A/µs Tj = 125°C SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) 2000 4000 6000 8000 10000 0 2000 4000 6000 8000 Collector-Emitter Voltage [V] Collector Current [A] VCC ≤ 4500V, VGE = ±15V Tj = 125°C, RG(off) ≥ 50 Ω