CM400HA-34H

CM400HA-34H MITSUBISHI | Alldatasheet

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Sep.1998 Dimensions Inches Millimeters A 4.49 114.0 D 1.26 32.0 F 1.02 26.0 G 1.0 25.5 H 0.83 21.0 Dimensions Inches Millimeters J 0.71 18.0 K 0.57 14.5 L 0.43 11.0 M 0.41 10.5 N 0.35 9.0 P M8 Metric M8 Q 0.26 Dia. Dia. 6.5 R M4 Metric M4 Description: Mitsubishi IGBT Modules are designed for use in switching appli- cations. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All com- ponents and interconnects are iso- lated from the heat sinking base- plate, offering simplified system as- sembly and thermal management. Features:eatures: u Low Drive Power u Low V CE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u AC Motor Control u Auxilliary Inverter for Traction u UPS u Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM400HA-34H is a 1700V (V CES ), 400 Ampere Single IGBT Module. Type Current Rating V CES Amperes Volts (x 50) CM 400 34 MITSUBISHI IGBT MODULES CM400HA-34H HIGH POWER SWITCHING USE INSULATED TYPE Outline Drawing and Circuit Diagram E C E C E G A B A B J N K DF L H H M G M P - M8 THD (2 TYP.) Q - DIA. (4 TYP.) R - M4 THD (2 TYP.) G E EC

Sep.1998 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM600HU-12H Units Junction Temperature T j -40 to 150 °C Storage Temperature T stg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 1700 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (Tc = 25°C) I C 400 Amperes Peak Collector Current (Tj ≤ 150°C) I CM 800* Amperes Emitter Current (Tc = 25°C) I E 400 Amperes Peak Emitter Current I EM 800* Amperes Maximum Collector Dissipation (Tc = 25°C) P c 4100 Watts Mounting Torque, M8 Main Terminal – 8.83~10.8 N · m Mounting Torque, M6 Mounting – 1.96~2.94 N · m Mounting Torque, M4 Terminal – 0.98~1.47 N · m Weight – 980 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 4000 Vrms * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 4 mA Gate Leakage Current I GES VGE = VGES , VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 40mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 400A, VGE = 15V – 2.7 3.7 Volts IC = 400A, VGE = 15V, Tj = 150°C – – –* Volts Total Gate Charge Q G VCC = 750V, IC = 400A, VGE = 15V – 2900 – nC Emitter-Collector Voltage V EC IE = 400A, VGE = 0V – – 3.4 Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies –– 8 5 n F Output Capacitance C oes VGE = 0V, VCE = 10V – – 20 nF Reverse Transfer Capacitance C res – – 15 nF Resistive Turn-on Delay Time t d(on) – – 900 ns Load Rise Time t r VCC = 750V, IC = 400A, – – 1500 ns Switching Turn-off Delay Time t d(off) VGE1 = VGE2 = 15V, RG = 10Ω – – 1500 ns Times Fall Time t f – – 800 ns Diode Reverse Recovery Time t rr IE = 400A, diE/dt = –800A/µs – – 400 ns Diode Reverse Recovery Charge Q rr IE = 400A, diE/dt = –800A/µs – 7.0 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c) Per IGBT – – 0.030 °C/W Thermal Resistance, Junction to Case R th(j-c) Per FWDi – – 0.060 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – – 0.023 °C/W MITSUBISHI IGBT MODULES CM400HA-34H HIGH POWER SWITCHING USE INSULATED TYPE

Sep.1998 IC , (AMPERES) VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 160 320 480 800 VGE = 15V Tj = 25°C Tj = 125°C 640 VGE , (VOLTS) VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 4 8 12 16 20 IC = 160A IC = 800A IC = 400A 01 4 101 VEC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 IE, (AMPERES) 102 Tj = 25°C VCE , (VOLTS) IC , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 800 02468 1 0 640 480 320 160 Tj = 25°C VGE = 20V 1215 VGE , (VOLTS) IC , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 800 0 4 8 12 16 20 640 480 320 160 VCE = 10V Tj = 25°C Tj = 125°C VCE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE (TYPICAL) 10-1 100 102 103 102 101 100 VGE = 0V 101 C ies C oes C res COLLECTOR CURRENT I C , (AMPERES) SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 101 102 103 103 102 tr td(off) VCC = 750V VGE = ±15V R G = 10Ω Tj = 125°C td(on) tf EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 103 102 101 Irr trr di/dt = -800A/µsec Tj = 25°C 103 102 101 REVERSE RECOVERY CURRENT, I rr, (AMPERES) GATE CHARGE, Q G , (µC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 0.8 1.6 2.4 4.0 VCC = 750V VCC = 500V IC = 400A 3.2 MITSUBISHI IGBT MODULES CM400HA-34H HIGH POWER SWITCHING USE INSULATED TYPE

Sep.1998 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.03°C/W Zth = R th

• (NORMALIZED VALUE) 10-1 10-2 10-3 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.06°C/W Zth = R th
• (NORMALIZED VALUE) 10-1 10-2 10-3 MITSUBISHI IGBT MODULES CM400HA-34H HIGH POWER SWITCHING USE INSULATED TYPE