CM400HA-28H

CM400HA-28H MITSUBISHI | Alldatasheet

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Sep.1998 Dimensions Inches Millimeters A 4.21 107.0 B 3.661 ±0.01 93.0 ±0.25 C 2.44 62.0 F 1.14 29.0 H 0.94 24.0 Dimensions Inches Millimeters J 0.79 20.0 K 0.69 17.5 L 0.63 16.0 M 0.35 9.0 N 0.28 7.0 P 0.26 Dia. Dia. 6.5 Q M6 Metric M6 R M4 Metric M4 Description: Mitsubishi IGBT Modules are de- signed for use in switching applica- tions. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast re- covery free-wheel diode. All com- ponents and interconnects are iso- lated from the heat sinking base- plate, offering simplified system as- sembly and thermal management. Features: u Low Drive Power u Low V CE(sat) u Discrete Super-Fast Recovery Free-Wheel Diode u High Frequency Operation u Isolated Baseplate for Easy Heat Sinking Applications: u AC Motor Control u Motion/Servo Control u UPS u Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM400HA-28H is a 1400V (V CES ), 400 Ampere Single IGBT Module. Type Current Rating V CES Amperes Volts (x 50) CM 400 28 Outline Drawing and Circuit Diagram G E N E C E G M A B KFJH J DC L Q - THD (2 TYP.) P - DIA. (4 TYP.) R - THD (2 TYP.) MITSUBISHI IGBT MODULES CM400HA-28H HIGH POWER SWITCHING USE INSULATED TYPE

Sep.1998 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM400HA-28H Units Junction Temperature T j –40 to 150 °C Storage Temperature T stg –40 to 125 °C Collector-Emitter Voltage (G-E SHORT) V CES 1400 Volts Gate-Emitter Voltage (C-E SHORT) V GES ±20 Volts Collector Current (TC =25°C) I C 400 Amperes Peak Collector Current (Tj ≤ 150°C) I CM 800* Amperes Emitter Current (TC =25°C) I E 400 Amperes Peak Emitter Current I EM 800* Amperes Maximum Collector Dissipation (TC =25°C) P c 2800 Watts Mounting Torque, M6 Terminal – 1.96 ~ 2.94 N · m Mounting Torque, M6 Mounting – 1.96 ~ 2.94 N · m Mounting Torque, M4 Terminal – 0.98 ~ 1.47 N · m Weight – 400 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 2500 Vrms *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I CES VCE = VCES , VGE = 0V – – 2.0 mA Gate Leakage Current I GES VGE = VGES , VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage V GE(th) IC = 40mA, VCE = 10V 5.0 6.5 8.0 Volts Collector-Emitter Saturation Voltage V CE(sat) IC = 400A, VGE = 15V – 3.1 4.2 Volts IC = 400A, VGE = 15V, Tj = 150°C – 2.95 – Volts Total Gate Charge Q G VCC = 800V, IC = 400A, VGE = 15V – 2040 – nC Emitter-Collector Voltage V EC IE = 400A, VGE = 0V – – 3.8 Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance C ies – – 80 nF Output Capacitance C oes VGE = 0V, VCE = 10V – – 28 nF Reverse Transfer Capacitance C res – – 16 nF Resistive Turn-on Delay Time t d(on) – – 300 ns Load Rise Time t r VCC = 800V, IC = 400A, – – 500 ns Switching Turn-off Delay Time t d(off) VGE1 = VGE2 = 15V, RG = 0.78Ω – – 350 ns Times Fall Time t f – – 500 ns Diode Reverse Recovery Time t rr IE = 400A, diE/dt = –800A/µs – – 300 ns Diode Reverse Recovery Charge Q rr IE = 400A, diE/dt = –800A/µs – 4.0 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case R th(j-c) Per IGBT – – 0.045 °C/W Thermal Resistance, Junction to Case R th(j-c) Per FWDi – – 0.09 °C/W Contact Thermal Resistance R th(c-f) Per Module, Thermal Grease Applied – – 0.040 °C/W MITSUBISHI IGBT MODULES CM400HA-28H HIGH POWER SWITCHING USE INSULATED TYPE

Sep.1998 EMITTER CURRENT, I E, (AMPERES) REVERSE RECOVERY TIME, t rr, (ns) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 101 102 103 102 101 trr Irr 102 101 100 REVERSE RECOVERY CURRENT, I rr, (AMPERES) di/dt = -800A/µsec Tj = 25°C GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 4 8 12 16 20 Tj = 25°C IC = 160A IC = 800A IC = 400A COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) CAPACITANCE, C ies, Coes, Cres, (nF) CAPACITANCE VS. V CE (TYPICAL) 10-1 100 102 102 101 100 10-1 VGE = 0V 101 C ies C oes C res GATE-EMITTER VOLTAGE, V GE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) TRANSFER CHARACTERISTICS (TYPICAL) 0 4 8 12 16 20 640 480 320 160 800 VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER VOLTAGE, V CE , (VOLTS) COLLECTOR CURRENT, I C , (AMPERES) OUTPUT CHARACTERISTICS (TYPICAL) 02468 1 0 480 160 VGE = 20V 13 12 Tj = 25oC 320 640 800 GATE CHARGE, Q G , (nC) GATE-EMITTER VOLTAGE, V GE , (VOLTS) GATE CHARGE, V GE 0 800 1600 2400 3200 IC = 400A VCC = 800V VCC = 600V 101 EMITTER-COLLECTOR VOLTAGE, V EC , (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 103 EMITTER CURRENT, I E, (AMPERES) Tj = 25°C 3.0 COLLECTOR-CURRENT, I C , (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 0 160 320 480 800 VGE = 15V Tj = 25°C Tj = 125°C 640 COLLECTOR CURRENT, I C , (AMPERES) SWITCHING TIME, (ns) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 101 102 103 102 101 tr tf VCC = 800V VGE = ±15V R G = 0.78Ω Tj = 125°C td(on) td(off) MITSUBISHI IGBT MODULES CM400HA-28H HIGH POWER SWITCHING USE INSULATED TYPE

Sep.1998 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.045°C/W Zth = R th

• (NORMALIZED VALUE) 10-1 10-2 10-3 TIME, (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 101 10-5 10-4 10-3 100 10-1 10-2 10-3 10-3 10-2 10-1 100 101 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.09°C/W Zth = R th
• (NORMALIZED VALUE) 10-1 10-2 10-3 MITSUBISHI IGBT MODULES CM400HA-28H HIGH POWER SWITCHING USE INSULATED TYPE