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-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE Prepared by K.Kurachi Revision: B I.Umezaki 24-Feb.-2009 Date HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES CM400E4G-130H

  • 1-element in a Pack (for brake chopper)
  • Insulated Type
  • AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm HVM-1049-B 1 of 8

-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES HVM-1049-B 2 of 8 MAXIMUM RATINGS Symbol Item Conditions Ratings Unit Tj = -40 °C 5800 Tj = +25 °C 6300 VCES Collector-emitter voltage VGE = 0 V Tj = +125 °C 6500 V VGES Gate-emitter voltage VCE = 0V, Tj = 25°C ± 20 V IC DC, Tc = 80°C 400 A ICM Collector current Pulse (Note 1) 800 A IE DC 400 A IEM Emitter current (Note 2) Pulse (Note 1) 800 A Pc Maximum power dissipation (Note 3) Tc = 25°C, IGBT part 5900 W Viso Isolation voltage RMS, sinusoidal, f = 60Hz, t = 1 min. 10200 V Ve Partial discharge extinction voltage RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC 5100 V Tj Junction temperature −40 ~ +150 °C Top Operating temperature −40 ~ +125 °C Tstg Storage temperature −40 ~ +125 °C tpsc Maximum short circuit pulse width VCC =4500V, VCE ≤ VCES, VGE =15V, Tj =125°C 10 µs

ELECTRICAL CHARACTERISTICS

Tj = 25°C — — 7 ICES Collector cutoff current VCE = VCES, VGE = 0V Tj = 125°C — 20 60 mA VGE(th) Gate-emitter threshold voltage VCE = 10 V, IC = 40 mA, Tj = 25°C 5.0 6.0 7.0 V IGES Gate leakage current VGE = VGES, VCE = 0V, Tj = 25°C −0.5 — 0.5 µA Cies Input capacitance — 82.0 — nF Coes Output capacitance — 5.0 — nF Cres Reverse transfer capacitance VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25°C — 1.4 — nF Qg Total gate charge VCC = 3600 V, IC = 400 A VGE = ±15 V, Tj = 25 °C — 6.6 — µC Tj = 25°C — 4.5 — VCE(sat) Collector-emitter saturation voltage IC = 400 A (Note 4) VGE = 15 V Tj = 125°C — 4.6 — V td(on) Turn-on delay time — 1.2 — µs tr Turn-on rise time — 0.35 — µs Eon(10%) Turn-on switching energy (Note 5) VCC = 3600 V, IC = 400 A VGE = ±15 V, RG(on) = 15 Ω Tj = 125 °C, Ls = 170 nH t(IGBT_off) = 60 µs (Note 6) , Inductive load — 3.0 — J/P td(off) Turn-off delay time — 8.2 — µs tf Turn-off fall time — 0.5 — µs tf2 Turn-off fall time — 3.1 — µs Eoff(10%) Turn-off switching energy (Note 5) VCC = 3600 V, IC = 400 A VGE = ±15 V, RG(off) = 50 Ω Tj = 125 °C, Ls = 170 nH Inductive load — 2.7 — J/P Tj = 25 °C — 4.0 — VEC Emitter-collector voltage (Note 2) IE = 400 A (Note 4) VGE = 0 V Tj = 125 °C — 3.6 — V trr R e v e r s e r e c o v e r y t i m e (Note 2) — 1.0 — µs trr2 R e v e r s e r e c o v e r y t i m e (Note 2) — 2.4 — µs Qrr Reverse recovery charge (Note 2) — 740 — µC Erec(10%) Reverse recovery energy (Note 2), (Note 5) VCC = 3600 V, IE = 400 A VGE = ±15 V, RG(on) = 15 Ω Tj = 125 °C, Ls = 170 nH t(IGBT_off) = 60 µs (Note 6) , Inductive load — 1.4 — J/P

-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES THERMAL CHARACTERISTICS Limits Symbol Item Conditions Min Typ Max Unit Rth(j-c)Q Thermal resistance Junction to Case, IGBT part — — 21.0 K/kW Junction to Case, FWDi part — — 33.0 K/kW Rth(j-c)R Thermal resistance Junction to Case, Clamp-Di part — — 33.0 K/kW Rth(c-f) Contact thermal resistance Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm — 9.0 — K/kW MECHANICAL CHARACTERISTICS Limits Symbol Item Conditions Min Typ Max Unit Mt M8: Main terminals screw 7.0 — 15.0 N·m Ms M6: Mounting screw 3.0 — 6.0 N·m Mt Mounting torque M4: Auxiliary terminals screw 1.0 — 3.0 N·m m Mass — 1.35 — kg CTI Comparative tracking index 600 — — — da Clearance 26.0 — — mm ds Creepage distance 56.0 — — mm Collector to Emitter — 27.0 — nH LP CE Parasitic stray inductance Anode to Cathode — 54.0 — nH Tc = 25°C, Collector to Emitter — 0.19 — mΩ RCC’+EE’ Internal lead resistance Tc = 25°C, Anode to Cathode — 0.38 — mΩ Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). Note 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi) and the brake chopper, anode to cathode clamp diode (Clamp-Di). Note 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C). Note 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Note 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. Note 6. t(IGBT_off) definition is shown as follows. IC t(IGBT_off) time HVM-1049-B 3 of 8

-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES HVM-1049-B 4 of 8 Fig. ２ – Definitions of switching times & energies of IGBT part Fig. ３ – Definitions of reverse recovery charge & energy of FWDi part Eoff = ic•vce dt tf2 td(off) 10%VCE 90%IC 90%VGE VGE 10%IC 50%IC di dt t3 t4 Eon = ic•vce dt ton tr td(on) IC VCE 90%IC 10%IC 10%VGE VCC 10%VCE tf = (0.9ic − 0.1ic) / (di/dt) toff = td(off) + tf t1 t2 Qrr = – ie dt Erec = – ie•vec dt di/dt Irr VEC (VR) IE (IF) 10%VEC 10%IE di dt t5 t6 trr2 trr

-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES PERFORMANCE CURVES HVM-1049-B 5 of 8 OUTPUT CHARACTERISTICS (TYPICAL) 200 400 600 800 012345678 Collector - Emitter Voltage [V] Collector Current [A] VGE = 8V VGE = 10V VGE = 15V VGE = 12V Tj = 125°C VGE = 20V TRANSFER CHARACTERISTICS (TYPICAL) 200 400 600 800 02468 1 0 1 2 Gate - Emitter Voltage [V] Collector Current [A] Tj = 25°C VCE = VGE Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 200 400 600 800 02468 Collector-Emitter Saturation Voltage [V] Collector Current [A] VGE = 15V Tj = 125°CTj = 25°C FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 200 400 600 800 02468 Emitter-Collector Voltage [V] Emitter Current [A] Tj = 25°CTj = 125°C

-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) 100 1000 0.1 1 10 100 Collector-Emitter Voltage [V] Capacitance [nF] Cies VGE = 0V, Tj = 25°C f = 100kHz Coes Cres HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES HVM-1049-B 6 of 8 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 0 200 400 600 800 1000 Collector Current [A] Switching Energies [J/P] Erec VCC = 3600V, VGE = ±15V RG(on) = 15Ω, RG(off) = 50Ω LS = 170nH, Tj = 125°C Inductive load Eoff Eon GATE CHARGE CHARACTERISTICS (TYPICAL) -15 -10 02468 1 Gate Charge [µC] Gate-Emitter Voltage [V] VCE = 3600V, IC = 400A Tj = 25°C HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 0 2 04 06 08 0 1 0 0 Gate resistor [Ohm] Switching Energies [J/P] Erec VCC = 3600V, IC = 400A VGE = ±15V, LS = 170nH Tj = 125°C, Inductive load Eon Eoff

-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES HVM-1049-B 7 of 8 PERFORMANCE CURVES HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 0.01 0.1 100 10 100 1000 Collector Current [A] Switching Times [µs] tf VCC = 3600V, VGE = ±15V RG(on) = 15Ω, RG(off) = 50Ω LS = 170nH, Tj = 125°C Inductive load tr td(on) td(off) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 0.2 0.4 0.6 0.8 1.2 0.001 0.01 0.1 1 10 Time [s] Normalized Transient Thermal impedance Rth(j-c)Q = 21.0K/kW Rth(j-c)R = 33.0K/kW FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 0.1 100 10 100 1000 Emitter Current [A] Reverse Recovery Time [µs] 100 1000 10000 Reverse Recovery Current [A] trr Irr VCC = 3600V, VGE = ±15V RG(on) = 15Ω, LS = 170nH Tj = 125°C, Inductive load = −∑ − exp 1R Z i tn 1 i i) c j ( th) t ( τ 1234 Ri [K/kW] : 0.0096 0.1893 0.4044 0.3967 τi [sec] : 0.0001 0.0058 0.0602 0.3512

-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES REVERSE BIAS SAFE OPERATING AREA (RBSOA) 200 400 600 800 1000 1200 0 2000 4000 6000 8000 Collector-Emitter Voltage [V] Collector Current [A] VCC ≤ 4500V, VGE = ±15V Tj = 125°C, RG(off) = 50Ω FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 200 400 600 800 1000 1200 0 2000 4000 6000 8000 Collector-Emitter Voltage [V] Reverse Recovery Current [A] VCC ≤ 4500V, Tj = 125°C di/dt < 2000A/µs SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) 2000 4000 6000 8000 10000 0 2000 4000 6000 8000 Collector-Emitter Voltage [V] Collector Current [A] VCC ≤ 4500V, VGE = ±15V RG(on) = 15Ω, RG(off) = 50Ω Tj = 125°C HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES HVM-1049-B 8 of 8