CM400DY-50H MITSUBISHI | Alldatasheet
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Mar. 2003 MITSUBISHI HVIGBT MODULES CM400DY-50H HIGH POWER SWITCHING USE INSULATED TYPE G Insulated Type G 2-elements in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. CM400DY-50H HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm C2 E2 CIRCUIT DIAGRAM E1C1 114 57±0.25 57±0.25 130 C2E1 E2C1 E2(C1) CM 24.5 124±0.25 140 7.2 48.8 53.6 36.3 4 - M8 NUTS 6 - φ 7 MOUNTING HOLES5 - M4 NUTS 61.5 39.55.7
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HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Mar. 2003 MITSUBISHI HVIGBT MODULES CM400DY-50H HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) MAXIMUM RATINGS (Tj = 25°C) VGE = 0V VCE = 0V DC, TC = 80°C Pulse (Note 1) Pulse (Note 1) TC = 25°C, IGBT part Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value 2500 ±20 400 800 400 800 3400 –40 ~ +150 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 V V A A A A W V N·m N·m N·m kg Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass Collector current Emitter current Symbol Item Conditions Unit Ratings V CES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso V V VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V Tj = 25°C Tj = 125°C VCC = 1250V, IC = 400A, VGE = 15V VCC = 1250V, IC = 400A VGE1 = VGE2 = 15V R G = 7.5Ω Resistive load switching operation I E = 400A, VGE = 0V IE = 400A die / dt = –800A / µs Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to fin, conductive grease applied (Per 1/2 module) IC = 40mA, VCE = 10V IC = 400A, VGE = 15V (Note 4) VCE = 10V VGE = 0V 0.5 4.16 1.00 2.00 2.00 1.00 3.77 1.20 0.036 0.072 mA µA nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W 3.20 3.60 4.4 1.3 1.8 2.90 0.016 6.04.5 7.5 Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Contact thermal resistance Min Typ Max I CES IGES C ies C oes C res Q G td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Q rr (Note 2) R th(j-c)Q R th(j-c)R R th(c-f) ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Parameter Conditions VGE(th) VCE(sat) Limits Unit Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 2. IE, VEC , trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Thermal resistance HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Mar. 2003 MITSUBISHI HVIGBT MODULES CM400DY-50H HIGH POWER SWITCHING USE INSULATED TYPEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES 800 400 200 0 100 2468 600 Tj=25°C VGE =13V VGE =12V VGE =11V VGE =10V VGE =9V VGE =8V VGE =7V VGE =14V VGE =15V VGE =20V 200 400 600 800 VGE =15V Tj = 25°C Tj = 125°C 800 400 200 600 20048 1 2 1 6 VCE =10V Tj = 25°C Tj = 125°C 02 0 161284 Tj = 25°C IC = 400A IC = 800A IC = 160A 100 2310–1 571 00 23 57 1 01 23 57 1 02 102 101 10–1 CAPACITANCE C ies, Coes, Cres (nF) C ies C oes C res VGE = 0V, Tj = 25°C C ies, C oes : f = 100kHz C res : f = 1MHz CAPACITANCE CHARACTERISTICS (TYPICAL ) CAPACITANCE C ies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE V CE (V) OUTPUT CHARACTERISTICS (TYPICAL ) COLLECTOR CURRENT I C (A) TRANSFER CHARACTERISTICS (TYPICAL ) COLLECTOR CURRENT I C (A) GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL ) COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL ) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL ) EMITTER-COLLECTOR VOLTAGE V EC (V) EMITTER CURRENT I E (A) 0 600 800 400200 Tj = 25°C Tj = 125°C
Mar. 2003 MITSUBISHI HVIGBT MODULES CM400DY-50H HIGH POWER SWITCHING USE INSULATED TYPEHVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 400030000 1000 2000 71 0210–1 23 5 7 1 0 3 23 5 100 71 02 10–1 23 5 7 1 0 3 23 55 100 td(off) VCC = 1250V, VGE = ±15V R G = 7.5Ω , Tj = 125°C Inductive load td(on) tr tf VCC = 1250V, Tj = 125°C Inductive load V GE = ±15V, RG = 7.5Ω trr Irr 101 102 101 103 10–2 10–3 10–2 10–1 100 10–1 100 101 23 57 23 57 23 57 Single Pulse TC = 25°C R th(j – c)Q = 0.036K/W R th(j – c)R = 0.072K/W (Per 1/2 module) VCC = 1250V IC = 400A HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL ) SWITCHING TIMES (µs) COLLECTOR CURRENT I C (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL ) REVERSE RECOVERY TIME t rr (µs) EMITTER CURRENT I E (A) REVERSE RECOVERY CURRENT I rr (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th(j – c) TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL ) GATE-EMITTER VOLTAGE V GE (V) GATE CHARGE Q G (nC ) 3.0 2.5 2.0 1.5 1.0 0.5 00 5 10 15 20 30 25 GATE RESISTANCE (Ω ) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL ) SWITCHING ENERGY (J/P) 0.2 0.4 0.6 0.8 1.0 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL ) CURRENT (A) SWITCHING ENERGY (J/P) 0 100 200 500 400300 VCC = 1250V, VGE = ±15V, R G = 7.5Ω , Tj = 125°C, Inductive load Eon Eoff Erec