CM400DY-34A_09 MITSUBISHI | Alldatasheet

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Feb. 2009 CM400DY-34A APPLICATION General purpose inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM400DY-34A HIGH POWER SWITCHING USE ¡Insulated Type ¡2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm C2E1 E2 E2 G2G1 E1 CIRCUIT DIAGRAM (( && ./654 φ .06/5*/()0-&4 ./654 ʢʣ ʢʣ ʢʣ ʢʣ AB C 9.1 –0.5 24.5 –0.5 -"#&-

Feb. 2009 VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 1000V, IC = 400A, VGE = 15V VCC = 1000V, IC = 400A VGE = ±15V RG = 1.2Ω, Inductive load IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to heat sink, Thermal compound applied (1/2 module)*1,*2 Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance I C = 40mA, VCE = 10V IC = 400A, VGE = 15V VCE = 10V VGE = 0V 1700 ±20 400 800 400 800 3780 –40 ~ +150 –40 ~ +125 3500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 MITSUBISHI IGBT MODULES CM400DY-34A HIGH POWER SWITCHING USE V V A A W Vrms N • m 2.0 2.8 98.8 11.2 2.12 950 300 1000 350 450 3.0 0.033 0.055 mA µA nF nC ns µC V K/W Ω 2.2 2.45 2670 0.019 1.2 7.0 V V 5.5 8.5 ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Symbol Parameter VGE(th) VCE(sat) *1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short DC, T C = 107°C*1 (Note 2) Pulse (Note 2) Operation (Note 2) Pulse (Note 2) T C = 25°C*1 Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M8 screw Mounting M6 screw G(E) terminal M4 screw Typical value Symbol Parameter Collector current Emitter current Conditions UnitRatings V CES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max.Test conditions ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Thermal resistance

Feb. 2009 MITSUBISHI IGBT MODULES CM400DY-34A HIGH POWER SWITCHING USE PERFORMANCE CURVES 100 200 300 400 500 600 700 800 04 6 8 1 0 Tj = 25°C VGE = 20V 048 1 2 1 6 2 0 VCE = 10V 100 200 300 400 500 600 700 800 Tj = 25°C Tj = 125°C 0 200 400 600 800 VGE = 15V Tj = 25°C Tj = 125°C 4 8 12 16 20 Tj = 25°C IC = 800A IC = 400A IC = 160A 101 102 0.5 1 1.5 2 2.5 3 3.5 4 103 104 Tj = 25°C Tj = 125°C 10–110–1 57103 102 101 100 2 10035 7 2 10135 7 2 10235 7 VGE = 0V Cies Coes Cres OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE VCE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) CAPACITANCE Cies, Coes, Cres (nF)

Feb. 2009 MITSUBISHI IGBT MODULES CM400DY-34A HIGH POWER SWITCHING USE 10–3 100 10–2 10–1 10–5 23 5 7 10–4 23 5 7 10–3 23 5 7 10–2 23 5 7 10–1 23 5 7 100 23 5 7 101 Conditions: VCC = 1000V VGE = ±15V RG = 1.2Ω Tj = 125°C Inductive load 101 102 103 104 101 10257 10323 5 723 td(off) td(on) tf tr Conditions: VCC = 1000V VGE = ±15V IC = 400A Tj = 125°C Inductive load 101 102 103 104 100 10157 10223 5 723 td(off) td(on) tr tf 101 103 102 100 102 101 101 10257 10323 5 723 100 10157 10223 5 723 101 10223 5 7 10323 5 7 101 102 103 trr Irr Conditions: VCC = 1000V VGE = ±15V RG = 1.2Ω Tj = 25°C Inductive load 101 103 102 100 102 101 SWITCHING LOSS Err (mJ/pulse) Single Pulse Tc= 25°C Tc measured point is just under the chips HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME td(on), tr, td(off), tf (ns) COLLECTOR CURRENT IC (A) HALF-BRIDGE SWITCHING CHARACTERISTICS SWITCHING TIME vs. GATE RESISTANCE (TYPICAL) SWITCHING TIME td(on), tr, td(off), tf (ns) GATE RESISTANCE RG (Ω) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS Eon, Eoff (mJ/pulse) SWITCHING LOSS Err (mJ/pulse) COLLECTOR CURRENT IC (A) SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) SWITCHING LOSS Eon, Eoff (mJ/pulse) GATE RESISTANCE RG (Ω) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IC (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) IGBT part: Per unit base = Rth(j–c) = 0.033K/W FWDi part: Per unit base = R th(j–c) = 0.055K/W TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) TIME (s) Conditions: VCC = 1000V VGE = ±15V RG = 1.2Ω Tj = 125°C Inductive load Err Eon Eoff Conditions: VCC = 1000V VGE = ±15V IC = 400A Tj = 125°C Inductive load Eon Err Eoff

Feb. 2009 MITSUBISHI IGBT MODULES CM400DY-34A HIGH POWER SWITCHING USE 0 1000 2000 3000 4000 VCC = 1000V VCC = 800V IC = 400A GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC)