CM400DY-12NF MITSUBISHI | Alldatasheet

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Jul.2004 C2E1 E2 C1 LABEL TAB #110 t=0.5 4-φ6.5 MOUNTING HOLES 3-M6 NUTS 18718718 21.5 242525 6 615 8.522.2 30 62 48±0.25 108 93±0.25 4 14 14 14 +1.0 –0.5 C2E1 E2 E2 G2G1 E1 CIRCUIT DIAGRAM Tc measured point (Base plate) CM400DY-12NF APPLICATION General purpose inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM400DY-12NF HIGH POWER SWITCHING USE ¡Insulated Type ¡2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Jul.2004 VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V Tj = 25°C Tj = 125°C VCC = 300V, IC = 400A, VGE = 15V VCC = 300V, IC = 400A VGE1 = VGE2 = 15V R G = 3.1Ω , Inductive load switching operation IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied*2 (1/2 module) Tc measured point is just under the chips IC = 40mA, VCE = 10V IC = 400A, VGE = 15V VCE = 10V VGE = 0V 600 ±20 400 800 400 800 1130 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 MITSUBISHI IGBT MODULES CM400DY-12NF HIGH POWER SWITCHING USE V V A A A A W V N • m N • m g 0.5 2.2 7.3 2.4 300 200 450 300 250 2.6 0.11 0.19 0.066 mA µA nF nF nF nC ns ns ns ns µC V °C/W °C/W °C/W °C/W Ω 1.7 1.7 1600 6.8 0.04 1.6 V 5 7.5 ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance*1 ICES IGES C ies C oes C res Q G td(on) tr td(off) tf trr (Note 1) Q rr (Note 1) VEC(Note 1) R th(j-c)Q R th(j-c)R R th(c-f) R th(j-c’)Q R G Symbol Parameter VGE(th) VCE(sat) *1 : Tc measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : Tc’ measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. Note 1. IE, VEC , trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short DC, T C ’ = 92°C *3 Pulse (Note 2) Pulse (Note 2) TC = 25°C Main Terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions Unit Ratings V CES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max. MAXIMUM RATINGS (Tj = 25°C) ELECTRICAL CHARACTERISTICS (Tj = 25°C) Test conditions

Jul.2004 MITSUBISHI IGBT MODULES CM400DY-12NF HIGH POWER SWITCHING USE PERFORMANCE CURVES 800 600 200 400 004 6 8 1 0 OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) Tj = 25°C VGE = 20V 00 400 800 600 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) COLLECTOR CURRENT I C (A) VGE = 15V Tj = 25°C Tj = 125°C 200 0 2012 146 8 10 16 18 GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) Tj = 25°C IC = 800A IC = 400A IC = 160A 101 102 103 012 4 35 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT I E (A) EMITTER-COLLECTOR VOLTAGE V EC (V) Tj = 25°C Tj = 125°C 10–1 100 10–1 101 102 2 10035 7 2 10135 7 2 10235 7 CAPACITANCE–V CE CHARACTERISTICS (TYPICAL) CAPACITANCE C ies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE V CE (V) C ies C oes C res VGE = 0V 100 101 102 103 101 10257 10323 5 723 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) COLLECTOR CURRENT I C (A) Conditions: V CC = 300V VGE = ±15V R G = 3.1Ω Tj = 125°C Inductive load td(off) td(on) tf tr

Jul.2004 MITSUBISHI IGBT MODULES CM400DY-12NF HIGH POWER SWITCHING USE 101 10223 5 7 10323 5 7 101 102 103 trr Irr REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT I E (A) REVERSE RECOVERY TIME t rr (ns) REVERSE RECOVERY CURRENT l rr (A) Conditions: VCC = 300V VGE = ±15V R G = 3.1Ω Tj = 25°C Inductive load 10–3 10–5 10–4 100 10–2 10–1 10–323 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th (j–c) TMIE (s) IGBT part: Per unit base = R th(j–c) = 0.11°C/W FWDi part: Per unit base = R th(j–c) = 0.19°C/W 0 1000500 2000 25001500 GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE V GE (V) GATE CHARGE Q G (nC) VCC = 300V VCC = 200V IC = 400A