CM400DU-5F MITSUBISHI | Alldatasheet

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Mar. 2002 CM400DU-5F APPLICATION DC choper, Inverters for battery source MITSUBISHI IGBT MODULES CM400DU-5F HIGH POWER SWITCHING USE ¡Insulated Type ¡2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm CIRCUIT DIAGRAM C2E1 E2 C1 E1 E2 G2G1 CM C1E2C2E1 LABEL 4-φ6. 5 MOUNTING HOLES 3-M6 NUTS 108 29 +1.0 –0.5 18 7 18 7 18 8.522 93 ±0.25 48 ±0.25 2.8 7.5 (8.25) (18) 156 0.5 0.5 0.5 0.5 14 14 14 25 2.5 21.525 Tc measured point E2 G2G1 E1 15.85

Mar. 2002 MITSUBISHI IGBT MODULES CM400DU-5F HIGH POWER SWITCHING USE 0.5 1.7 110 7.0 3.8 850 400 1100 500 300 0.14 0.24 0.08 mA µA nF nC µC V °C/W 1.2 1.1 750 16.0 0.04 4.0 V V ns 3.0 5.0 ns 250 ±20 400 800 400 800 890 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 V V W V N • m N • m g A A VCE = VCES, VGE = 0V VGE = VCES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 100V, IC = 400A, VGE = 10V VCC = 100V, IC = 400A VGE1 = VGE2 = 10V RG = 6.3Ω, Inductive load switching operation IE = 400A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compoundapplied *2 (1/2 module) Tc measured point is just under the chips IC = 40mA, VCE = 10V IC = 400A, VGE = 10V VCE = 10V VGE = 0V Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance*3 Gate-emitter threshold voltage Collector to emitter saturation voltage Thermal resistance*1 ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Symbol Parameter VGE(th) VCE(sat) Note 1. IE, VEC, trr, Qrr and die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short TC = 25°C Pulse (Note 2) TC = 25°C Pulse (Note 2) TC = 25°C Main Terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value Symbol Parameter Collector current Emitter current Mounting torque Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max. MAXIMUM RATINGS (Tj = 25°C) ELECTRICAL CHARACTERISTICS (Tj = 25°C) Test conditions

Mar. 2002 PERFORMANCE CURVES MITSUBISHI IGBT MODULES CM400DU-5F HIGH POWER SWITCHING USE 800 200 400 600 001 345 OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) Tj = 25°C 6.25 5.75 5.5 5.25 6.5 VGE = 15V 400 200 800 700 600 500 300 100 002468 1 0 TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT (A) GATE-EMITTER VOLTAGE VGE (V) VCE = 10V Tj = 25°C Tj = 125°C 1.6 1.2 0.8 0.4 00 100 200 300 400 500 600 700 800 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) VGE = 10V Tj = 25°C Tj = 125°C 0 2008 6421 2 1 6 10 14 18 GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25°C IC = 800AIC = 400A IC = 160A 101 102 103 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) Tj = 25°C 10–110–1 100 101 102 2 10035 7 2 10135 7 2 10235 7 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) Cies Coes Cres VGE = 0V

Mar. 2002 MITSUBISHI IGBT MODULES CM400DU-5F HIGH POWER SWITCHING USE 101 10223 5 7 10323 5 7 101 102 103 trr Irr REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IE (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) Conditions: VCC = 100V VGE = ±10V RG = 6.3Ω Tj = 25°C Inductive load 101 10–3 10–5 10–4 100 10–2 10–1 10–323 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) TMIE (s) IGBT part: Per unit base = Rth(j– c) = 0.14°C/W FWDi part: Per unit base = R th(j– c) = 0.24°C/W 0 500 1500 30001000 2500 2000 GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) VCC = 50V VCC = 100V IC = 400A 101 10257 10323 5 7 102 103 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A) Conditions: V CC = 100V VGE = ±10V RG = 6.3Ω Tj = 125°C Inductive load td(off) td(on) tf tr