CM400DU-34KA MITSUBISHI | Alldatasheet

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Sep. 2001 CM400DU-34KA 4-φ6.5MOUNTING Tc measured point Tc measured point HOLES 140 130 110±0.25 10 110±0.25 130 14.5 40 14.5 20.4 10 -0.5 24.5 -0.5 36 43.8 13.8 11.5 (26) (26) (26) (15) (15) 3-M8 NUTS 4-M4 NUTS G2E2E1G1 C2E1 CIRCUIT DIAGRAM C2E1 E2 C1 G2E2E1 G1 APPLICATION General purpose inverters & Servo controlers, etc MITSUBISHI IGBT MODULES CM400DU-34KA HIGH POWER SWITCHING USE G Insulated Type G 2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Sep. 2001 Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance*1 VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 1000V, IC = 400A, VGE = 15V VCC = 1000V, IC = 400A VGE1 = VGE2 = 15V RG = 1.0Ω, Inductive load switching operation IE = 400A IE = 400A, VGE = 0V , Tj = 25°C IE = 400A, VGE = 0V , Tj = 125°C IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied*2 (1/2 module) Tc measured point is just under the chips IC = 40mA, VCE = 10V IC = 400A, VGE = 15V VCE = 10V VGE = 0V Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance*3 ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q 1700 ±20 400 800 400 800 1950 –40 ~ +150 –40 ~ +125 3500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 MITSUBISHI IGBT MODULES CM400DU-34KA HIGH POWER SWITCHING USE V V A A A A W V N • m 0.5 4.1 9.6 1000 300 1000 800 600 4.6 0.064 0.11 0.025 mA µA nF nF nF nC ns ns ns ns ns µC V V °C/W °C/W °C/W °C/W 3.2 3.8 1800 18.9 2.2 0.010 5.5 V V Symbol Parameter VGE(th) VCE(sat) Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse (Note 2) TC = 25°C Pulse (Note 2) TC = 25°C Main terminal to base plate, AC 1 min. Main Terminal M8 Mounting holes M6 G(E) Terminal M4 Typical value Symbol Parameter Collector current Emitter current Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max. MAXIMUM RATINGS (Tj = 25°C) ELECTRICAL CHARACTERISTICS (Tj = 25°C) Test conditions

Sep. 2001 MITSUBISHI IGBT MODULES CM400DU-34KA HIGH POWER SWITCHING USE PERFORMANCE CURVES 800 200 400 600 0 2468 1 0 OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) Tj = 25°C 1112 VGE = 20V 400 600 800 200 0 4 8 12 16 20 TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT (A) GATE-EMITTER VOLTAGE VGE (V) VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) VGE = 15V Tj = 25°C Tj = 125°C 0 700 200 400100 300 600 500 800 0 206 8 12 16 10 14 18 GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25°C IC = 800A IC = 400A IC = 160A 10–110–1 100 101 102 2 10035 7 2 10135 7 2 10235 7 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) Cies Coes Cres VGE = 0V 101 102 103 12345 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) Tj = 25°C

Sep. 2001 MITSUBISHI IGBT MODULES CM400DU-34KA HIGH POWER SWITCHING USE 101 10257 10323 5 7 102 103 104 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A) Conditions: VCC = 1000V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive load td(off) td(on) tf tr 101 10223 5 7 10323 5 7 101 102 103 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) trr Irr Conditions: VCC = 1000V VGE = ±15V RG = 1.0Ω Tj = 25°C Inductive load 00 500 1500 25001000 2000 GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) VCC = 800V VCC = 1000V IC = 400A 101 10–3 10–5 10–4 100 10–2 10–1 10–323 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) TMIE (s) IGBT part: Per unit base = Rth(j– c) = 0.064°C/W FWDi part: Per unit base = R th(j– c) = 0.11°C/W