CM400DU-24NFH

CM400DU-24NFH_09 MITSUBISHI | Alldatasheet

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Feb. 2009 CM400DU-24NFH APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. MITSUBISHI IGBT MODULES CM400DU-24NFH HIGH POWER SWITCHING USE ¡Insulated Type ¡2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm G1 E1 E2 G2 C1E2C2E1 3-M6 NUTS 4-φ6.5 MOUTING HOLES L A B E L (8.5) (22.2) 9.25(10) (8.5) (9)(9) 93 ±0.25 62 ±0.25 110 17.5 18.25 61 56 29 +1.0 –0.5 21.2 8.5 18 18 1877 14 14 14 25 21.5 TAB #110. t = 0.5 G2 E2E1 G1 C2E1 E2 C1 CIRCUIT DIAGRAM

Feb. 2009 VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 600V, IC = 400A, VGE = 15V VCC = 600V, IC = 400A VGE = ±15V RG = 0.78Ω, Inductive load IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) IGBT part (1/2 module) FWDi part (1/2 module) I C = 40mA, VCE = 10V IC = 400A, VGE = 15V VCE = 10V VGE = 0V Gate-emitter threshold voltage Thermal resistance*1 Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight 1200 ±20 400 800 400 800 1040 2450 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 MITSUBISHI IGBT MODULES CM400DU-24NFH HIGH POWER SWITCHING USE V V A A A A W W Vrms N • m N • m g 1.4 6.5 5.3 1.2 300 100 500 150 250 3.5 0.12 0.23 0.051 0.093*3 7.8 mA µA nF nF nF nC ns ns ns ns µC V K/W K/W K/W K/W K/W Ω 5.0 5.0 1800 0.02 0.78 V 4.5 7.5 ns Collector cutoff current Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Rth(j-c’)R RG Symbol Parameter VGE(th) VCE(sat) *1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : Case temperature (TC’) measured point is just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. No short circuit capability is designed. G-E Short C-E Short Operation (Note 2) Pulse (Note 2) Operation (Note 2) Pulse (Note 2) T C = 25°C TC’ = 25°C*4 Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Symbol Parameter Collector current Emitter current Mounting torque Conditions UnitRatings V CES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC’ (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max.Test conditions MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Feb. 2009 MITSUBISHI IGBT MODULES CM400DU-24NFH HIGH POWER SWITCHING USE 10–1 100 101 102 103 10–1 2 10035 7 2 10135 7 2 10235 7 VGE = 0V Cies Coes Cres 0 5 10 15 20 VCE = 10V 0 100 200 300 400 700 800500 600 Tj = 25°C Tj = 125°C VGE = 15V 100 200 300 400 500 600 700 800 02468 1 0 0 100 200 300 400 500 600 700 800 VGE=20 (V) Tj = 25°C 61 0 1 4 1 881 2 1 6 2 0 Tj = 25°C IC = 800A IC = 400A IC = 160A 101 102 012 4 35 103 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) PERFORMANCE CURVES

Feb. 2009 MITSUBISHI IGBT MODULES CM400DU-24NFH HIGH POWER SWITCHING USE 101 10223 5 7 10323 5 7 101 102 103

7 Tj = 25°C

7 td(off) td(on) tf tr 0 500 1000 1500 2000 2500 VCC = 600V VCC = 400V IC = 400A Conditions: VCC = 600V VGE = ±15V RG = 0.78Ω Tj = 125°C Inductive load Conditions: V CC = 600V VGE = ±15V RG = 0.78Ω Tj = 25°C Inductive load 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Per unit base = Rth(j–c) = 0.12K/W 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Per unit base = Rth(j–c) = 0.23K/W 101 102 103 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TIME (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) REVERSE RECOVERY TIME trr (ns) EMITTER CURRENT IE (A) REVERSE RECOVERY CURRENT Irr (A) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c)