CM400DU-24F MITSUBISHI | Alldatasheet

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Sep. 2001 CM400DU-24F C2E1 4-φ6.5MOUNTING G2E2E1G1 E2 C1C2E1 RTC RTC Tc measured point Tc measured point CIRCUIT DIAGRAM HOLES 140 130 110±0.25 10 110±0.25 130 14.5 40 14.5 20.4 10 -0.5 24.5 -0.5 36 43.8 13.8 11.5 (26) (26) (26) (15) (15) 3-M8 NUTS 4-M4 NUTS G2E2E1G1 APPLICATION General purpose inverters & Servo controlers, etc MITSUBISHI IGBT MODULES CM400DU-24F HIGH POWER SWITCHING USE G Insulated Type G 2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Sep. 2001 IC = 40mA, VCE = 10V IC = 400A, VGE = 15V VCE = 10V VGE = 0V 1200 ±20 400 800 400 800 1100 –40 ~ +150 –40 ~ +125 2500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 MITSUBISHI IGBT MODULES CM400DU-24F HIGH POWER SWITCHING USE V V A A A A W V N • m 2.4 160 6.8 4.0 450 200 1000 300 550 3.2 0.11 0.13 0.045*3 mA µA nF nF nF nC ns ns ns ns ns µC V °C/W °C/W °C/W °C/W Ω 1.8 1.9 4400 23.6 0.010 3.1 V Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance*1 ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Symbol Parameter VGE(th) VCE(sat) Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse (Note 2) TC = 25°C Pulse (Note 2) TC = 25°C Main terminal to base plate, AC 1 min. Main Terminal M8 Mounting holes M6 G(E) Terminal M4 Typical value Symbol Parameter Collector current Emitter current Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max. MAXIMUM RATINGS (Tj = 25°C) ELECTRICAL CHARACTERISTICS (Tj = 25°C) Test conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 600V, IC = 400A, VGE = 15V VCC = 600V, IC = 400A VGE1 = VGE2 = 15V RG = 3.1Ω, Inductive load switching operation IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound applied *2 (1/2 module) Tc measured point is just under the chips

Sep. 2001 MITSUBISHI IGBT MODULES CM400DU-24F HIGH POWER SWITCHING USE 600 700 800 400 200 500 300 100 00 0.5 1 1.5 2 2.5 3 3.5 4 101 102 103 0 0.5 1 1.5 2 3.5 4 2.5 3 100 101 102 103 10–1 2 10035 7 2 10135 7 2 10235 7 0.5 1.5 2.5 0 8000 200 400 600 06 8 10 12 14 16 18 20 1 10223 5 7 10323 5 7 101 102 103 104 100 8.5 9.5 Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C td(off) td(on) tf OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A) tr VGE=20V Tj=25°C IC = 800A IC = 400A IC = 160A VGE = 0V Cies Coes Cres Conditions: VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive load Tj = 25°C PERFORMANCE CURVES

Sep. 2001 MITSUBISHI IGBT MODULES CM400DU-24F HIGH POWER SWITCHING USE 101 10223 5 7 10323 5 7 101 102 103 10–3 100 10–2 100 10–1 10–5235 7 235 7 235 7 235 710–4 10–2 10–110–3 0 1000 2000 3000 4000 5000 6000 Irr trr 10–1 100 10123 57 23 57 VCC = 400V VCC = 600V IC = 400A REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (°C/W) TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) Single Pulse TC = 25°C IGBT part: Per unit base = Rth(j– c) = 0.11°C/W FWDi part: Per unit base = R th(j– c) = 0.13°C/W Conditions: VCC = 600V VGE = ±15V RG = 3.1Ω Tj = 25°C Inductive load