CM400DU-12NFH MITSUBISHI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Feb.2004 CM400DU-12NFH APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. MITSUBISHI IGBT MODULES CM400DU-12NFH HIGH POWER SWITCHING USE ¡Insulated Type ¡2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm CIRCUIT DIAGRAM C2E1 E2 C1 G2E2E1 G1 E1 E2 G2G1 CM C1E2C2E1 LABEL 4-φ6. 5 MOUTING HOLES 3-M6 NUTS 108 29 +1.0 –0.5 18 7 18 7 18 8.522 93 ±0.25 48 ±0.25 2.8 7.5 6156 0.5 0.5 0.5 0.5 14 14 14 25 2.5 21.525 TC measured point

Feb.2004 Gate-emitter threshold voltage Thermal resistance*1 VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V Tj = 25°C Tj = 125°C VCC = 300V, IC = 400A, VGE = 15V VCC = 300V, IC = 400A VGE1 = VGE2 = 15V R G = 3.1Ω , Inductive load switching operation IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compound Applied*2 (1/2 module) Tc measured point is just under the chips (1/2 module) IC = 40mA, VCE = 10V IC = 400A, VGE = 15V VCE = 10V VGE = 0V 600 ±20 400 800 400 800 960 1640 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 MITSUBISHI IGBT MODULES CM400DU-12NFH HIGH POWER SWITCHING USE V V A A A A W W V N • m N • m g 0.5 2.7 110 7.2 4.0 400 200 700 150 200 2.6 0.13 0.18 0.076 mA µA nF nF nF nC ns ns ns ns µC V °C/W °C/W °C/W °C/W Ω 2.0 1.95 2480 7.7 0.04 1.6 V ns Collector cutoff current Gate leakage current Collector-emitter saturation voltage (Note 4) Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance I CES IGES C ies C oes C res Q G td(on) tr td(off) tf trr (Note 1) Q rr (Note 1) VEC(Note 1) R th(j-c)Q R th(j-c)R R th(c-f) R th(j-c’)Q R G Symbol Parameter VGE(th) VCE(sat) *1 : TC measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : TC ’ measured point is just under the chips. Note 1. IE, VEC , trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. No short circuit capability is designed. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short Operation Pulse (Note 2) Operation Pulse (Note 2) T C = 25°C TC ’ = 25°C *4 Main Terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value Symbol Parameter Collector current Emitter current Mounting torque Conditions Unit Ratings V CES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC ’ (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max.Test conditions MAXIMUM RATINGS (Tj = 25°C) ELECTRICAL CHARACTERISTICS (Tj = 25°C)

Feb.2004 MITSUBISHI IGBT MODULES CM400DU-12NFH HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) COLLECTOR CURRENT I C (A) GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT I E (A) EMITTER-COLLECTOR VOLTAGE V EC (V) CAPACITANCE–V CE CHARACTERISTICS (TYPICAL) CAPACITANCE C ies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE V CE (V) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) COLLECTOR CURRENT I C (A) 800 700 600 200 500 400 100 300 002 3 4 5 Tj = 25°C VGE = 20V 7.5 8.5 13 11 10 9.5 0.5 1.5 2.5 0 100 200 300 400 500 600 700 800 VGE = 15V Tj = 25°C Tj = 125°C 4.5 3.5 2.5 1.5 0.5 0 2012 146 8 10 16 18 Tj = 25°C IC = 160A IC = 800A IC = 400A 10–1 101 100 102 103 2 10035 7 2 10135 7 2 10235 7 C ies C oes C resVGE = 0V 101 103 102 101 10257 10323 5 723 td(off) td(on) tf tr 101 102 103 0 0.5 1 1.5 2 2.5 3 Tj = 25°C Conditions: VCC = 300V VGE = ±15V R G = 3.1Ω Tj = 125°C Inductive load

Feb.2004 MITSUBISHI IGBT MODULES CM400DU-12NFH HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT I E (A) REVERSE RECOVERY TIME t rr (ns) REVERSE RECOVERY CURRENT l rr (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part ) NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th (j–c) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th (j–c) TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE V GE (V) GATE CHARGE Q G (nC) 101 10223 5 7 10323 5 7 101 102 103 trr Irr 10–3 10–5 10–4 100 10–2 10–1 10–323 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C 10–3 10–5 10–4 100 10–2 10–1 10–323 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C 0 500 1000 1500 2000 2500 3000 3500 Per unit base = R th(j–c) = 0.13°C/W Per unit base = R th(j–c) = 0.18°C/W VCC = 200V VCC = 300V IC = 400A Conditions: VCC = 300V VGE = ±15V R G = 3.1Ω Tj = 25°C Inductive load