CM400DU-12H_09 MITSUBISHI | Alldatasheet
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Feb. 2009 MITSUBISHI IGBT MODULES CM400DU-12H HIGH POWER SWITCHING USE INSULATED TYPE
- Insulated Type
- 2-elements in a pack
- UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders CM400DU-12H OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 8.85 (8.25) (18) CIRCUIT DIAGRAM C2E1 E2 C1 G2E2E1 G1 0.5 0.5 25.7 0.5 0.5 E1 E2 G2G1 CM C1E2C2E1 LABEL 4-φ6. 5 MOUNTING HOLES 3-M6 NUTS 108 29 +1.0 –0.5 18 7 18 7 18 8.522 93 ±0.25 48 ±0.25 2.8 7.5 6156 (7) 17.5 14 14 14 25 2.5 21.525 TC measured point (7.5)(7.5)
Feb. 2009 MITSUBISHI IGBT MODULES CM400DU-12H HIGH POWER SWITCHING USE INSULATED TYPE V V VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 300V, IC = 400A, VGE = 15V VCC = 300V, IC = 400A VGE = ±15V RG = 1.6Ω Resistive load I E = 400A, VGE = 0V IE = 400A, die / dt = –800A / µs Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to heat sink, conductive grease applied (Per 1/2 module) (Note 6) I C = 40mA, VCE = 10V IC = 400A, VGE = 15V (Note 4) VCE = 10V VGE = 0V Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance (Note 5) Contact thermal resistance Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight V GE = 0V VCE = 0V TC = 25°C Pulse (Note 1) T C = 25°C Pulse (Note 1) T C = 25°C Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Collector current Emitter current 600 ±20 400 800 400 800 1130 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol Item Conditions Unit Ratings V V A A A A W Vrms N·m N·m g V CES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Min Typ Max 0.5 3.0 35.2 19.2 5.2 250 600 350 300 2.6 160 0.11 0.18 mA µA nF nF nF nC ns ns ns ns V ns µC K/W K/W K/W 2.4 2.6 800 0.96 0.04 I CES IGES Cies Coes Cres QG td (on) tr td (off) tf VEC(Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Item Test Conditions VGE(th) VCE(sat) Limits Unit 64.5 Note 1. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 2. IE, IEM, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Case temperature (T C) measured point is shown in page OUTLINE DRAWING. 6. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. 7.5
Feb. 2009 MITSUBISHI IGBT MODULES CM400DU-12H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 200 400 600 800 02468 1 0 VGE=20 (V) T j=25°C 200 400 600 800 048 1 2 1 62 0 VCE = 10V Tj = 25°C Tj = 125°C 0 200 400 600 800 Tj = 25°C Tj = 125°C VGE = 15V 0 200 48 1 2 16 Tj = 25°C IC = 800A IC = 400A IC = 160A 102 103
7 Tj = 25°C
10–1 100 101 102 10–1 2 10035 7 2 10135 7 2 10235 7 VGE = 0V Cies Coes Cres FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V)
Feb. 2009 MITSUBISHI IGBT MODULES CM400DU-12H HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) REVERSE RECOVERY TIME trr (ns) EMITTER CURRENT IE (A) REVERSE RECOVERY CURRENT Irr (A) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 101 103 101 102 102 103 100 102 101 –di/dt = 800A/µs Tj = 25°C trr lrr 101 10223 5 7 10323 5 7 101 102 103 VCC = 300V VGE = ±15V RG = 1.6Ω Tj = 125°C td(off) td(on) tf tr 101 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Per unit base = Rth(j – c) = 0.18K/W 101 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Per unit base = Rth(j – c) = 0.11K/W 0 200 400 600 800 14001000 1200 VCC = 200V VCC = 300V IC = 400A 23 5 7 23 5 7 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TIME (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c)