CM400DU-12F

CM400DU-12F MITSUBISHI | Alldatasheet

Document overview

• Manufacturer or author: Ando Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Aug. 1999 CM400DU-12F RTC RTC CIRCUIT DIAGRAM C2E1 E2 C1 G2E2E1 G1 E1 E2 G2G1 CM C1E2C2E1 LABEL 4-f6. 5 MOUNTING HOLES 3-M6 NUTS 108 29 +1.0 –0.5 18 7 18 7 18 8.522 93 –0.25 48 –0.25 2.8 7.5 6156 0.5 0.5 0.5 0.5 14 14 14 25 2.5 21.525 Tc measured point APPLICATION General purpose inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM400DU-12F HIGH POWER SWITCHING USE ¡Insulated Type ¡2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Aug. 1999 600 ±20 400 800 400 800 960 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 MITSUBISHI IGBT MODULES CM400DU-12F HIGH POWER SWITCHING USE V V W V N • m N • m g A A 2.2 110 7.2 4.0 400 200 700 250 200 2.6 0.13 0.18 0.076 mA µA nF nC µC V °C/W Ω 1.6 1.6 2480 7.7 0.04 3.1 V ns ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance*1 ICES IGES C ies C oes C res Q G td(on) tr td(off) tf trr (Note 1) Q rr (Note 1) VEC(Note 1) R th(j-c)Q R th(j-c)R R th(c-f) R th(j-c’)Q R G Symbol Parameter VGE(th) VCE(sat) Note 1. IE, VEC , trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short T C = 25°C Pulse (Note 2) TC = 25°C Pulse (Note 2) T C = 25°C Main terminal to base plate, AC 1 min. Main T erminal M6 Mounting holes M6 Typical value Symbol Parameter Collector current Emitter current T orque strength Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max. MAXIMUM RATINGS (Tj = 25°C) ELECTRICAL CHARACTERISTICS (Tj = 25°C) Test conditions VCE = VCES , VGE = 0V VGE = VCES , VCE = 0V Tj = 25°C Tj = 125°C VCC = 300V, IC = 400A, VGE = 15V VCC = 300V, IC = 400A VGE1 = VGE2 = 15V RG = 3.1Ω , Inductive load switching operation IE = 400A IE = 400A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to fin, Thermal compoundapplied *2 (1/2 module) Tc measured point is just under the chips IC = 40mA, VCE = 10V IC = 400A, VGE = 15V VCE = 10V VGE = 0V

Aug. 1999 MITSUBISHI IGBT MODULES CM400DU-12F HIGH POWER SWITCHING USE 600 700 800 400 200 500 300 100 00 0.5 1 1.5 2 2.5 3 3.5 4 101 102 103 0 0.5 1 1.5 2 3.5 42.5 3 100 101 102 103 10–1 2 10035 7 2 10135 7 2 10235 7 0.5 1.5 2.5 0 8000 200 400 600 06 8 10 12 14 16 18 20 0 10123 5 7 10223 5 7 10323 5 7 101 102 103 100 8.5 7.5 9.5 VGE =20V Tj=25°C Tj = 25°C Tj = 125°C VGE = 15V IC = 800A IC = 400A IC = 160A Tj = 25°C Tj = 25°C VGE = 0V C ies C oes C res td(off) td(on) tf tr Conditions: VCC = 300V VGE = –15V R G = 3.1Ω Tj = 125°C OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) COLLECTOR CURRENT I C (A) GATE-EMITTER VOLTAGE V GE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT I E (A) EMITTER-COLLECTOR VOLTAGE V EC (V) CAPACITANCE–V CE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE C ies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) SWITCHING TIMES (ns) COLLECTOR CURRENT I C (A) PERFORMANCE CURVES

Aug. 1999 MITSUBISHI IGBT MODULES CM400DU-12F HIGH POWER SWITCHING USE 101 10223 5 7 10323 5 7 101 102 103 101 10–3 100 10–2 10–1 10–323 57 23 57 23 57 23 57 10110–2 10–1 100 0 500 1000 1500 2000 2500 3000 3500 Irr trr 10–5 10–4 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C VCC = 200V VCC = 300V IC = 400A Conditions: VCC = 300V VGE = –15V R G = 3.1Ω Tj = 25°C REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT I E (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th (j–c) (°C/W) TMIE (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE V GE (V) GATE CHARGE Q G (nC) IGBT part: Per unit base = Rth(j–c) = 0.13°C/W FWDi part: Per unit base = R th(j–c) = 0.18°C/W REVERSE RECOVERY TIME t rr (ns) REVERSE RECOVERY CURRENT l rr (A)