CM35MX-24A

CM35MX-24A MITSUBISHI | Alldatasheet

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Jan. 2009 MITSUBISHI IGBT MODULES CM35MX-24A HIGH POWER SWITCHING USE CM35MX-24A ¡CIB (3-phase Converter + 3-phase Inverter + Brake) ¡Flatbase Type / Insulated Package / Copper base plate ¡RoHS Directive compliant APPLICATION General purpose Inverters, Servo Amplifiers 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 121.7 ˎ118.1 110 ±0.5 94.5 ˎ58.4 A 0.8 50 ±0.5 57.5 ˎ4.2 ˎ15.48 ˎ11.66 ˎ4.06 ˎ13.09 ˎ16.9ˎ15 ˎ18.8 ˎ30.24 ˎ34.04 ˎ45.48 ˎ49.28 ˎ60.72 ˎ64.52 ˎ75.96 ˎ79.76 ˎ91.2 ˎ95 (7.75) ˎ28.33 ˎ32.14 ˎ66.43 ˎ70.24 ˎ81.67 ˎ85.48 ˎ89.29 ˎ93.1 ˎ96.91 ˎ15.48 ˎ19.28 ˎ30.72 ˎ34.52 ˎPin positions with tolerance ˎ47.38 ˎ51.19 ˎ26.9 ˎ23.1 ˎ38.34 ˎ34.52 0 03.75 4-φ5.5 MOUNTING HOLES 20.5 (3) 0.8

3.5 LABEL

TERMINAL t = 0.8 SECTION A (7.4) 1.2 1.5 12.5 φ2.5 φ4.3 φ2.1 (3.81) 1.15 0.65 φ0.5 GB(35) N(57~58) P(52~53) B(24~25) N1(60~61) P1(54~55) GuN(34) GuP(49) EuP(48) GvN(33) GvP(44) EvP(43) U(13~14) GwN(32) GwP(39) EwP(38) V(17~18) W(21~22) TH2(28) TH1(29) E(31) NTC * Use both terminals (R/S/T/P/N/P1/B/N1/U/V/W) to the external connection. CIRCUIT DIAGRAM 5PMFSBODFPUIFSXJTFTQFDJGJFE Division of Dimension 0.5 to 3 over 3 to 6 over 6 to 30 over 30 to 120 over 120 to 400 Tolerance ±0.2 ±0.3 ±0.5 ±0.8 ±1.2 OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Jan. 2009 MITSUBISHI IGBT MODULES CM35MX-24A HIGH POWER SWITCHING USE ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) INVERTER PART Symbol Parameter Conditions Rating Unit VCES VGES IC ICRM PC IE (Note.3) IERM(Note.3) Collector-emitter voltage Gate-emitter voltage Collector current Maximum collector dissipation Emitter current (Free wheeling diode forward current) G-E Short C-E Short DC, T C = 105°C Pulse T C = 25°C TC = 25°C Pulse 1200 ±20 295 V A W A (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) BRAKE PART Rating Unit VCES VGES IC ICRM PC VRRM(Note.3) IF (Note.3) IFRM(Note.3) Collector-emitter voltage Gate-emitter voltage Collector current Maximum collector dissipation Repetitive peak reverse voltage Forward current G-E Short C-E Short DC, T C = 121°C Pulse T C = 25°C TC = 25°C Pulse 1200 ±20 260 1200 V A W V A (Note. 1) (Note. 4) (Note. 1, 5) (Note. 1) (Note. 4) Symbol Parameter Conditions CONVERTER PART Rating Unit VRRM Ea IO IFSM I2t Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge forward current Current square time 3-phase full wave rectifying, TC = 141°C The sine half wave 1 cycle peak value, f = 60Hz, non-repetitive Value for one cycle of surge current 1600 440 350 510 V Vrms A A (Note. 1) Symbol Parameter Conditions MODULE Rating Unit Tj Tstg Viso Junction temperature Storage temperature Isolation voltage Base plate flatness Torque strength Weight Terminals to base plate, f = 60Hz, AC 1 minute On the centerline X, Y Mounting M5 screw (Typical) –40 ~ +150 –40 ~ +125 2500 ±0 ~ +100 2.5 ~ 3.5 270 Vrms μm N·m g Note. 8: The base plate flatness measurement points are in the following figure. (Note. 8) Symbol Parameter Conditions )FBUTJOLTJEF )FBUTJOLTJEF ɿDPOWFY –ɿDPODBWF

Jan. 2009 ELECTRICAL and THERMAL RESISTANCE CHARACTERISTICS (Tj = 25°C, unless otherwise specified) INVERTER PART Limits UnitMin. Typ. Max. ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note.3) Qrr (Note.3) VEC(Note.3) Rth(j-c)Q Rth(j-c)R RGint RG Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance (Junction to case) Internal gate resistance External gate resistance V CE = VCES, VGE = 0V IC = 3.5mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 35A, VGE = 15V IC = 35A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 35A, VGE = 15V VCC = 600V, IC = 35A VGE = ±15V, RG = 9.1Ω Inductive load (IE = 35A) IE = 35A, VGE = 0V IE = 35A, VGE = 0V per IGBT per free wheeling diode T C = 25°C, per switch 2.0 2.2 1.9 180 1.5 2.6 2.16 2.5 0.5 2.6 6.0 0.53 0.12 100 300 600 200 3.4 0.42 0.69 8.9 mA V μA V nF nC ns μC V K/W Ω T j = 25°C Tj = 125°C Chip (Note. 6) (Note. 1) (Note. 6) Tj = 25°C Tj = 125°C Chip (Note. 6) Symbol Parameter Conditions BRAKE PART Limits UnitMin. Typ. Max. ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG IRRM(Note.3) VFM(Note.3) Rth(j-c)Q Rth(j-c)R RGint RG Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Repetitive peak reverse current Forward voltage drop Thermal resistance (Junction to case) Internal gate resistance External gate resistance V CE = VCES, VGE = 0V IC = 2mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 20A, VGE = 15V IC = 20A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 20A, VGE = 15V VR = VRRM IF = 20A IF = 20A per IGBT per Clamp diode T C = 25°C 2.0 2.2 1.9 150 2.6 2.16 2.5 0.5 2.6 5.1 0.45 0.1 3.4 0.48 1.1 150 mA V μA V nF nC mA V K/W Ω T j = 25°C Tj = 125°C Chip (Note. 6) (Note. 1) (Note. 6) Tj = 25°C Tj = 125°C Chip (Note. 6) Symbol Parameter Conditions IRRM VF Rth(j-c) Repetitive peak reverse current Forward voltage drop Thermal resistance (Junction to case) V R = VRRM, Tj = 150°C IF = 35A per Diode 1.2 1.6 0.45 mA V K/W(Note. 1) Limits UnitMin. Typ. Max.Symbol Parameter Conditions CONVERTER PART MITSUBISHI IGBT MODULES CM35MX-24A HIGH POWER SWITCHING USE

Jan. 2009 MITSUBISHI IGBT MODULES CM35MX-24A HIGH POWER SWITCHING USE Note.1: Case temperature (T C), heat sink temperature (T f) measured point is just under the chips. (Refer to the figure of the chip location.) 2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K). 3: IE, IERM, VEC, trr, Qrr and Err represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part. 4: Pulse width and repetition rate should be such that the device junction temperature (T j) dose not exceed Tjmax rating. 5: Junction temperature (T j) should not increase beyond 150 °C. 6: Pulse width and repetition rate should be such as to cause negligible temperature rise. (Refer to the figure of the test circuit for V CE(sat) and VEC) NTC THERMISTOR PART Limits UnitMin. Typ. Max. R ΔR/R B (25/50) P25 Zero power resistance Deviation of resistance B constant Power dissipation T C = 25°C TC = 100°C, R100 = 493Ω Approximate by equation T C = 25°C 5.00 3375 5.15 +7.8 4.85 –7.3 kΩ K mW (Note. 7) Symbol Parameter Conditions Chip Location (Top view) Dimensions in mm (tolerance: ±1mm) MODULE Rth(c-f) Contact thermal resistance (Case to fin) Thermal grease applied per 1 module 0.015 —— K/W(Note. 2)(Note. 1) Limits UnitMin. Typ. Max.Symbol Parameter Conditions 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 (121.7) (110) (50) (62) LABEL SIDE 32.4 28.4 29.4 41.9 40.4 48.4 65.0 70.6 74.7 84.4 89.0 19.1 27.5 (Tr/UP , Tr/VP , Tr/WP) 28.6 (Di/Br, Th) 35.7 42.6 94.9 98.2 100.4 29.4 37.4 45.4 63.7 70.1 77.5 81.5 83.4 91.3 96.7 CRR N CSR N CTR N TUrP DU iP DB ir DW iP DV iP TUrND U i N DW iN DV iN TVr ThP TBr r T W rP TW rN TVrNCRRP CSRP CTRP Each mark points the center position of each chip. Tr: IGBT, Di: FWDi (DiBr: Clamp diode), CR**: Converter diode, Th: NTC t hermistor R25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K] R50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K] R50 T25 T50

Jan. 2009 MITSUBISHI IGBT MODULES CM35MX-24A HIGH POWER SWITCHING USE trr, Qrr test waveform t IE trr Irr 1/2 ✕ Irr Qrr = 1/2 ✕ Irr ✕ trr Switching time test circuit and waveforms VCC+ IC VCE IEArm RG –VGE +VGE –VGE Load 0V VGE VGE IC td(on) td(off) tr tf 90% 10% 90% P side Inverter part Tr (example of U arm) VG*E* = 0V (GvP-EvP , GwP-EwP , GvN-E, GwN-E, GB-E) N side Inverter part Tr (example of U arm) VG*E* = 0V (GvP-EvP , GwP-EwP , GvN-E, GwN-E, GB-E) Br Tr VG*E* = 0V (GuP-EuP , GvP-EvP , GwP-EwP , GuN-E, GvN-E, GwN-E) P side Inverter part Di (example of U arm) VG*E* = 0V (GvP-EvP , GwP-EwP , GvN-E, GwN-E, GB-E) N side Inverter part Di (example of U arm) VG*E* = 0V (GvP-EvP , GwP-EwP , GvN-E, GwN-E, GB-E) Br Di VG*E* = 0V (GuP-EuP , GvP-EvP , GwP-EwP , GuN-E, GvN-E, GwN-E) ICVGE = 15V U VGE = 0V GuP EuP GuN E V ICVGE = 15V U VGE = 0V GuP EuP GuN E V ICVGE = 15V B GB E V IEVGE = 0V U VGE = 0V GuP EuP GuN E V IEVGE = 0V U VGE = 0V GuP EuP GuN E V IF VGE = 0V B GB E V VCE(sat) test circuit VEC/VFM test circuit

Jan. 2009 0 100 246813579 Tj = 25°CVGE = 20V 3.5 1.5 2.5 0.5 00 10 20 30 40 50 60 70 Tj = 25°C Tj = 125°C VGE = 15V 206 8 10 12 14 16 18 Tj = 25°C IC = 70A IC = 35A IC = 14A 101 100 102 Tj = 25°C Tj = 125°C 10–1 2 10035 7 2 10135 7 2 10235 7 10–2 10–1 100 101 102 Cies VGE = 0V Coes Cres 100 10123 5 7 10223 5 7 101 100 102 103 td(off) td(on) tf tr Conditions: VCC = 600V VGE = ±15V RG = 9.1Ω Tj = 125°C Inductive load OUTPUT CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Inverter part FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) Inverter part EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE CHARACTERISTICS (TYPICAL) Inverter part CAPACITANCE (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)EMITTER CURRENT IE (A)SWITCHING TIME (ns) MITSUBISHI IGBT MODULES CM35MX-24A HIGH POWER SWITCHING USE PERFORMANCE CURVES

Jan. 2009 100 100 10–1 101 102 100 10157 10223 5 723 Conditions: VCC = 600V VGE = ±15V IC, IE = 35A Tj = 125°C Inductive load 100 10157 10223 5 723 Eoff Eon Err 100 101 100 102 103 Conditions: VCC = 600V VGE = ±15V RG = 9.1Ω Tj = 25°C Inductive load 100 10157 10223 5 723 Irr trr 101 100 102 103 Conditions: VCC = 600V VGE = ±15V IC = 35A Tj = 125°C Inductive load 101 100 10–1 Conditions: V CC = 600V VGE = ±15V RG = 9.1Ω Tj = 125°C Inductive load 100 10157 10223 5 723 Eoff Eon Err td(off) td(on) tr tf 0 50 100 150 2502000 VCC = 400V VCC = 600V IC = 35A 10–3 100 10–2 10–1 10–5 23 5 7 10–4 23 5 7 10–3 23 5 7 10–2 23 5 7 10–1 23 5 7 100 23 5 7 101 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part SWITCHING LOSS (mJ/pulse) GATE RESISTANCE RG (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part SWITCHING TIME (ns) GATE RESISTANCE RG (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) Inverter part SWITCHING LOSS (mJ/pulse) lrr (A), trr (ns) COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) REVERSE RECOVERY CHARACTERISTICS OF FREE WHEELING DIODE (TYPICAL) Inverter part EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) Inverter part GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) Single pulse, TC = 25°C TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j–c) TIME (s) Inverter IGBT part : Per unit base = R th(j–c) = 0.42K/W Inverter FWDi part : Per unit base = R th(j–c) = 0.69K/W Converter-Di part : Per unit base = R th(j–c) = 0.45K/W Brake IGBT part : Per unit base = R th(j–c) = 0.48K/W Brake Clamp-Di part : Per unit base = Rth(j–c) = 1.1K/W MITSUBISHI IGBT MODULES CM35MX-24A HIGH POWER SWITCHING USE

Jan. 2009 100 101 102 Tj = 25°C Tj = 125°C 100 101 102 0 0.5 1.0 1.5 2.0 Tj = 25°C Tj = 125°C 0.5 1.5 2.5 3.5 05 10 15 20 25 30 35 40 VGE = 15V Tj = 25°C Tj = 125°C RECTIFIER DIODE FORWARD CHARACTERISTICS (TYPICAL) Converter part FORWARD CURRENT lF (A) FORWARD VOLTAGE VF (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) Brake part COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (A) CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) Brake part FORWARD CURRENT IF (A) FORWARD VOLTAGE VF (V) MITSUBISHI IGBT MODULES CM35MX-24A HIGH POWER SWITCHING USE