CM350DU-5F

CM350DU-5F_09 MITSUBISHI | Alldatasheet

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Feb. 2009 MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION UPS, Forklift CM350DU-5F OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

• Insulated Type
• 2-elements in a pack
• UL Recognized Yellow Card No. E80276 File No. E80271 G1 E1 E2 G2 C1E2C2E1 3-M6 NUTS TC measured point 4-φ6.5 MOUTING HOLES LABEL G1 G2E2E1 CM C1E2C2E1 (8.25) 18.25 (18.5) 62 ±0.25 110 93 ±0.25 2.521.5 61 56 1414 29 +1.0 –0.5 18718718 21 8.5 7.5 2.8 0.5 0.50.5 0.5 25 25 CIRCUIT DIAGRAM

Feb. 2009 MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE V V VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V VCC = 100V, IC = 350A, VGE = 10V VCC = 100V, IC = 350A VGE = ±10V RG = 7.1Ω Resistive load IE = 350A, VGE = 0V IE = 350A, die / dt = –700A / µs Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to heat sink, conductive grease applied (Per 1/2 module) (Note 6) I C = 35mA, VCE = 10V IC = 350A, VGE = 10V (Note 4) VCE = 10V VGE = 0V Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance (Note 5) Contact thermal resistance Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short T C = 25°C Pulse (Note 2) TC = 25°C Pulse (Note 2) TC = 25°C Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Collector current Emitter current 250 ±20 350 700 350 700 960 –40 ~ +150 –40 ~ +125 2500 1.96 ~ 2.94 1.96 ~ 2.94 520 MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol Conditions UnitRatings V V A A A A W Vrms N • m N • m g VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Min Typ Max 0.5 1.7 4.5 3.4 1100 2400 900 500 2.0 300 0.13 0.19 mA µA nF nF nF nC ns ns ns ns V ns µC K/W K/W K/W 1.2 1.10 1320 5.7 0.02 I CES IGES Cies Coes Cres QG td (on) tr td (off) tf VEC(Note 1) trr (Note 1) Qrr (Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Test conditions VGE(th) VCE(sat) Limits Unit 4.03.0 Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. 5.0 6. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Parameter Parameter Tj = 25°C Tj = 125°C

Feb. 2009 MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES 10–1 100 101 102 10–1 2 10035 7 2 10135 7 2 10235 7 VGE = 0V Cies Coes Cres 100 200 300 400 500 600 700 02468 1 0 VCE = 10V Tj = 25°C Tj = 125°C 1.5 2.0 0.5 1.0 0 100 200 300 400 700500 600 Tj = 25°C Tj = 125°C VGE = 10V 100 200 300 400 500 600 700 012345 VGE=15 (V) Tj = 25°C 5.75 5.5 4.5 5.25 4.75 02 051 0 1 5 Tj = 25°C IC = 140A IC = 350A IC = 700A 101 102 Tj = 25°C FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V)

Feb. 2009 MITSUBISHI IGBT MODULES CM350DU-5F HIGH POWER SWITCHING USE INSULATED TYPE 102 101 103 101 10223 5 7 10323 5 7 101 102 103 7 –d i/dt = 700A/µs Tj = 25°C trr Irr 101 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Per unit base = Rth(j – c) = 0.13K/W 101 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Per unit base = Rth(j – c) = 0.19K/W 101 10223 5 7 10323 5 7 102 101 103 VCC = 100V VGE = ±10V RG = 7.1Ω Tj = 125°C td(off) td(on) tf tr VCC = 50V VCC = 100V IC = 350A TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TIME (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) REVERSE RECOVERY TIME trr (ns) EMITTER CURRENT IE (A) REVERSE RECOVERY CURRENT Irr (A) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c)