CM300DY-24NF_09 MITSUBISHI | Alldatasheet

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Feb. 2009 G2G1 E2E1 C1E2C2E1 LABEL TAB #110. t=0.5 141414 (20.5) 21.525 25 6 15 6 18718718 +1.0 –0.5 8.521.2 93±0.25 110 62±0.25 3-M6 NUTS 4-φ6.5 MOUNTING HOLES C2E1 E2 E2 G2G1 E1 CIRCUIT DIAGRAM Tc measured point (Base plate) CM300DY-24NF APPLICATION General purpose inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM300DY-24NF HIGH POWER SWITCHING USE ¡Insulated Type ¡2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Feb. 2009 VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 600V, IC = 300A, VGE = 15V VCC = 600V, IC = 300A VGE = ±15V RG = 1Ω, Inductive load IE = 300A IE = 300A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) Case temperature measured point is just under the chips IC = 30mA, VCE = 10V IC = 300A, VGE = 15V VCE = 10V VGE = 0V 1200 ±20 300 600 300 600 1130 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 MITSUBISHI IGBT MODULES CM300DY-24NF HIGH POWER SWITCHING USE V V A A A A W Vrms N • m N • m g 0.5 2.5 1.4 500 150 600 350 250 3.2 0.11 0.18 0.046 mA µA nF nF nF nC ns ns ns ns µC V K/W K/W K/W K/W Ω 1.8 2.0 2000 0.02 1.0 V ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance*1 ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Symbol Parameter VGE(th) VCE(sat) *1 : Case temperature (Tc) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : Case temperature (Tc’) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short DC, TC’ = 111°C*3 Pulse (Note 2) Pulse (Note 2) TC = 25°C Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions UnitRatings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max. MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Test conditions

Feb. 2009 MITSUBISHI IGBT MODULES CM300DY-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES 600 500 200 100 400 300 004 6 8 1 0 OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) Tj = 25°C VGE = 20V 00 200 600400 500300 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) VGE = 15V Tj = 25°C Tj = 125°C 100 101 102 103 012 4 35 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) Tj = 25°C Tj = 125°C 0 2012 1468 1 0 16 18 GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25°C IC = 600A IC = 120A IC = 300A 10–1 100 10–1 101 102 2 10035 7 2 10135 7 2 10235 7 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) Cies Coes Cres VGE = 0V 101 102 103 104 101 10257 10323 5 723 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) td(off) td(on) tf tr Conditions: VCC = 600V, VGE = ±15V, RG = 1.0Ω Tj = 125°C, Inductive load

Feb. 2009 MITSUBISHI IGBT MODULES CM300DY-24NF HIGH POWER SWITCHING USE 101 10223 5 7 10323 5 7 101 102 103 trr Irr REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IE (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 25°C Inductive load 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) TIME (s) IGBT part: Per unit base = R th(j–c) = 0.11K/W FWDi part: Per unit base = R th(j–c) = 0.18K/W 0 500 30001000 2000 25001500 GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) VCC = 600V VCC = 400V IC = 300A