CM300DY-24A_09 MITSUBISHI | Alldatasheet

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Feb. 2009 C2E1 E2 E2 G2G1 E1 CIRCUIT DIAGRAM TAB #110 t=0.5187418718 21.5 242525 6 61517.5 ʢʣ ʢʣʢʣ ʢʣ 48 ʢʣ ʢʣ ʢʣ ʢʣ ʢʣ ±0.25 108 93±0.25 4 14 14 14 2.8 +1.0 –0.5 C2E1 E2 C1 LABEL 4-φ6.5 MOUNTING HOLES 3-M6 NUTS 8.5 7.5 22.2 CM300DY-24A APPLICATION AC drive inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE ¡Insulated Type ¡2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Feb. 2009 VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 600V, IC = 300A, VGE = 15V VCC = 600V, IC = 300A VGE = ±15V RG = 1.0Ω, Inductive load IE = 300A IE = 300A, VGE = 0V IGBT part (1/2 module)*1 FWDi part (1/2 module)*1 Case to heat sink, Thermal compound Applied (1/2 module)*1,*2 IC = 30mA, VCE = 10V IC = 300A, VGE = 15V VCE = 10V VGE = 0V 1200 ±20 300 600 300 600 1890 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE V V A A W Vrms N • m g 0.5 3.0 0.9 550 180 600 350 250 3.8 0.066 0.12 mA µA nF nC ns µC V K/W Ω 2.1 2.4 1350 9.0 0.02 1.0 V ns ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Symbol Parameter VGE(th) VCE(sat) *1 : Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short DC, T C = 80°C*1 Pulse (Note 2) Pulse (Note 2) TC = 25°C*1 Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions UnitRatings V CES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max.Test conditions ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance Thermal resistance

Feb. 2009 MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE 600 500 200 100 400 300 00 468 1 0 OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) Tj = 25°C VGE = 20V 00 200 600400 500300 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) VGE = 15V Tj = 25°C Tj = 125°C 100 0 2012 1468 1 0 16 18 GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25°C IC = 120A IC = 600A IC = 300A 101 102 103 012 4 35 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) Tj = 25°C Tj = 125°C 10–1 100 10–1 101 102 2 10035 7 2 10135 7 2 10235 7 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) Cies Coes Cres VGE = 0V 101 102 103 101 10257 10323 5 723 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive load td(off) td(on) tf tr PERFORMANCE CURVES

Feb. 2009 MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE 101 10223 5 7 10323 5 7 101 102 103 trr Irr REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IE (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 25°C Inductive load 10–3 102 101 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Under the chip TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c’) (ratio) TIME (s) IGBT part: Per unit base = R th(j–c) = 0.066K/W FWDi part: Per unit base = R th(j–c) = 0.12K/W 100 101 10257 10323 5 723 RECOVERY LOSS vs. IE (TYPICAL) RECOVERY LOSS (mJ/pulse) EMITTER CURRENT IE (A) Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive load C snubber at bus Err 102 101 100 101 10257 10323 5 723 SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS (mJ/pulse) COLLECTOR CURRENT IC (A) Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C Inductive load C snubber at bus Esw(off) Esw(on) 102 101 100 100 10157 10223 5 723 RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) RECOVERY LOSS (mJ/pulse) GATE RESISTANCE RG (Ω) Conditions: VCC = 600V VGE = ±15V IE = 300A Tj = 125°C Inductive load C snubber at bus Err 103 102 101 100 10157 10223 5 723 SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) SWITCHING LOSS (mJ/pulse) GATE RESISTANCE RG (Ω) Conditions: VCC = 600V VGE = ±15V IC = 300A Tj = 125°C Inductive load C snubber at bus Esw(off) Esw(on)

Feb. 2009 MITSUBISHI IGBT MODULES CM300DY-24A HIGH POWER SWITCHING USE 0 800400 1600 20001200 GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) VCC = 600V VCC = 400V IC = 300A