CM300DU-24H_09 MITSUBISHI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Feb. 2009 MITSUBISHI IGBT MODULES CM300DU-24H HIGH POWER SWITCHING USE INSULATED TYPE APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders CM300DU-24H OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm G1 E1 E2 G2 C1E2C2E1 CIRCUIT DIAGRAM 3-M6 NUTS TC measured point 4-φ6.5 MOUTING HOLES LABEL G1 G2E2E1 CM C1E2C2E1 (8.25) 18.25 (18.5) 62 ±0.25 110 93 ±0.25 2.521.5 61 56 1414 29 +1.0 –0.5 18718718 21 8.5 7.5 2.8 0.5 0.50.5 0.5 25 25

  • Insulated Type
  • 2-elements in a pack
  • UL Recognized Yellow Card No. E80276 File No. E80271

Feb. 2009 MITSUBISHI IGBT MODULES CM300DU-24H HIGH POWER SWITCHING USE INSULATED TYPE V V VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 600V, IC = 300A, VGE = 15V VCC = 600V, IC = 300A VGE = ±15V RG = 1.0Ω Resistive load I E = 300A, VGE = 0V IE = 300A, die / dt = –600A / µs Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to heat sink, conductive grease applied (Per 1/2 module) (Note 6) I C = 30mA, VCE = 10V IC = 300A, VGE = 15V (Note 4) VCE = 10V VGE = 0V Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance (Note 5) Contact thermal resistance Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight V GE = 0V VCE = 0V TC = 25°C Pulse (Note 1) T C = 25°C Pulse (Note 1) T C = 25°C Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Collector current Emitter current 1200 ±20 300 600 300 600 1130 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol Item Conditions Unit Ratings V V A A A A W Vrms N·m N·m g V CES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Min Typ Max 0.5 3.7 200 300 350 350 3.2 300 0.11 0.18 mA µA nF nF nF nC ns ns ns ns V ns µC K/W K/W K/W 2.9 2.85 1125 1.65 0.02 I CES IGES Cies Coes Cres QG td (on) tr td (off) tf VEC(Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Item Test Conditions VGE(th) VCE(sat) Limits Unit 64.5 Note 1. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Case temperature (T C) measured point is shown in page OUTLINE DRAWING. 7.5 6. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].

Feb. 2009 MITSUBISHI IGBT MODULES CM300DU-24H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES 0 200 48 1 2 16 Tj = 25°C IC = 600A IC = 300A IC = 120A 100 200 300 600 400 500 048 1 2 1 6 2 0 VCE = 10V Tj = 25°C Tj = 125°C 0 6000 200 400 500100 300 Tj = 25°C Tj = 125°C VGE = 15V 100 200 300 600 400 500 02468 1 0 VGE = 20 (V) Tj = 25°C 101 102 103 Tj = 25°C 10–1 100 101 102 10–1 2 10035 7 2 10135 7 2 10235 7 VGE = 0V Cies Coes Cres FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V)

Feb. 2009 MITSUBISHI IGBT MODULES CM300DU-24H HIGH POWER SWITCHING USE INSULATED TYPE Per unit base = Rth(j – c) = 0.24°C/WPer unit base = Rth(j – c) = 0.14°C/W 101 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Per unit base = Rth(j – c) = 0.18K/W 101 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Per unit base = Rth(j – c) = 0.11K/W 0 400 800 1200 1600 VCC = 400V VCC = 600V IC = 300A 101 10223 5 7 10323 5 7 101 102 103 VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 125°C td(off) td(on) tf tr 101 100 102 101 10223 5 7 10323 5 7 101 102 103 7 –d i/dt = 600A/µs Tj = 25°C trr Irr TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TIME (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) REVERSE RECOVERY TIME trr (ns) EMITTER CURRENT IE (A) REVERSE RECOVERY CURRENT Irr (A) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c)