CM300DU-24F_09 MITSUBISHI | Alldatasheet

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Feb. 2009 CM300DU-24F G1 E1 E2 G2 C1E2C2E1 RTC RTC CIRCUIT DIAGRAM 3-M6 NUTS Tc measured point 4-φ6.5 MOUNTING HOLES L A B E L G1 G2E2E1 CM C1E2C2E1 (8.25) 18.25 (18.5) 62 ±0.25 110 93 ±0.25 2.521.5 61 56 1414 29 +1.0 –0.5 18718718 21 8.5 7.5 2.8 0.5 0.50.5 0.5 25 25 APPLICATION General purpose inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM300DU-24F HIGH POWER SWITCHING USE

  • Insulated Type
  • 2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Feb. 2009 VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V VCC = 600V, IC = 300A, VGE = 15V VCC = 600V, IC = 300A VGE = ±15V RG = 1.0Ω, Inductive load IE = 300A IE = 300A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature measured point is just under the chips IC = 30mA, VCE = 10V IC = 300A, VGE = 15V VCE = 10V VGE = 0V 1200 ±20 300 600 300 600 960 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 MITSUBISHI IGBT MODULES CM300DU-24F HIGH POWER SWITCHING USE V V W Vrms N • m N • m g A A 2.4 120 5.1 300 500 300 250 3.2 0.13 0.18 0.065✽3 mA µA nF nC µC V K/W Ω 1.8 1.9 3300 17.6 0.02 1.0 V ns ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance*1 ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Symbol Parameter VGE(th) VCE(sat) Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short TC = 25°C Pulse (Note 2) TC = 25°C Pulse (Note 2) TC = 25°C Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions UnitRatings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max. MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Test conditions Tj = 25°C Tj = 125°C

Feb. 2009 MITSUBISHI IGBT MODULES CM300DU-24F HIGH POWER SWITCHING USE VGE = 20V Tj = 25°C 9.5 8.5 600 400 200 500 300 100 000 . 511 .5 2 2.5 3 3.5 4 2.5 1.5 0.5 00 200 400 600 Tj = 25°C Tj = 125°C VGE = 15V 101 102 103 0.5 1 1.5 2 2.5 3 3.5 Tj = 25°C 0 2068 1 2 1610 14 18 IC = 600A IC = 300A IC = 120A Tj = 25°C 10–1100 101 102 103 2 10035 7 2 10135 7 2 10235 7 VGE = 0V Cies Coes Cres 101 10257 10323 5 7 101 102 103 100 Conditions: VCC = 600V VGE = ±15V RG = 1Ω Tj = 125°C Inductive load td(off) td(on) tf tr OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A) PERFORMANCE CURVES

Feb. 2009 MITSUBISHI IGBT MODULES CM300DU-24F HIGH POWER SWITCHING USE 101 10223 5 7 10323 5 7 101 102 103 trr Irr 0 1000 3000 50002000 4000 VCC = 400V VCC = 600V IC = 300A 101 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Conditions: VCC = 600V VGE = ±15V RG = 1.0Ω Tj = 25°C Inductive load REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) IGBT part: Per unit base = Rth(j–c) = 0.13K/W FWDi part: Per unit base = R th(j–c) = 0.18K/W REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A)