CM300DU-12NFH_09 MITSUBISHI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Feb. 2009 CM300DU-12NFH APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. MITSUBISHI IGBT MODULES CM300DU-12NFH HIGH POWER SWITCHING USE ¡Insulated Type ¡2-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 8.85 (8.25) (18) CIRCUIT DIAGRAM C2E1 E2 C1 G2 E2E1 G1 E1 E2 G2G1 CM C1E2C2E1 LABEL 4-φ6. 5 MOUNTING HOLES 3-M6 NUTS 108 29 +1.0 –0.5 18 7 18 7 18 8.522 93 ±0.25 48 ±0.25 2.8 7.5 6 15 6 (7) 17.5 14 14 14 25 2.521.525 TC measured point (7.5)(7.5) 0.5 0.5 25.7 0.5 0.5

Feb. 2009 Gate-emitter threshold voltage Thermal resistance*1 VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 300V, IC = 300A, VGE = 15V VCC = 300V, IC = 300A VGE = ±15V RG = 4.2Ω, Inductive load IE = 300A IE = 300A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) Case temperature measured point is just under the chips (1/2 module) IC = 30mA, VCE = 10V IC = 300A, VGE = 15V VCE = 10V VGE = 0V 600 ±20 300 600 300 600 780 1250 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 MITSUBISHI IGBT MODULES CM300DU-12NFH HIGH POWER SWITCHING USE V V A A A A W W Vrms N • m N • m g 0.5 2.7 5.4 3.0 350 150 700 150 200 2.6 0.16 0.24 0.10 mA µA nF nF nF nC ns ns ns ns µC V K/W K/W K/W K/W Ω 2.0 1.95 1860 5.5 0.04 2.1 V ns Collector cutoff current Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance I CES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Symbol Parameter VGE(th) VCE(sat) *1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : Case temperature (TC’) measured point is just under the chips. Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. No short circuit capability is designed. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short Operation Pulse (Note 2) Operation Pulse (Note 2) T C = 25°C TC’ = 25°C*4 Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Symbol Parameter Collector current Emitter current Mounting torque Conditions UnitRatings V CES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC’ (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max.Test conditions MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)

Feb. 2009 MITSUBISHI IGBT MODULES CM300DU-12NFH HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) 100 200 300 400 500 600 02 3 4 5 Tj = 25°C VGE = 20V 7.5 8.5 13 11 10 9.5 0.5 1.5 2.5 0 100 200 300 400 500 600 VGE = 15V Tj = 25°C Tj = 125°C 4.5 3.5 2.5 1.5 0.5 0 2012 1468 1 0 16 18 Tj = 25°C IC = 120A IC = 600A IC = 300A 10–1 100 10–1 101 102 2 10035 7 2 10135 7 2 10235 7 Cies Coes Cres VGE = 0V 101 103 102 101 10257 10323 5 723 Conditions: VCC = 300V VGE = ±15V RG = 4.2Ω Tj = 125°C Inductive load td(off) td(on) tf tr 101 102 103 0 0.5 1 1.5 2 2.5 3 Tj = 25°C Tj = 125°C

Feb. 2009 MITSUBISHI IGBT MODULES CM300DU-12NFH HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IE (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part ) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) 101 10223 5 7 10323 5 7 101 102 103 trr Irr Conditions: VCC = 300V VGE = ±15V RG = 4.2Ω Tj = 25°C Inductive load 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C VCC = 300V 0 500 1000 1500 2000 2500 Per unit base = Rth(j–c) = 0.16K/W Per unit base = R th(j–c) = 0.24K/W VCC = 200V IC = 300A