CM2400HCB-34N | DigiCamel IC Datasheet

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Sep. 2009 MITSUBISHI HVIGBT MODULES CM2400HCB-34N HIGH POWER SWITCHING USE INSULATED TYPE

Insulated Type
1-element in a Pack
AISiC Baseplate
Trench Gate IGBT : CSTBTTM
Soft Reverse Recovery Diode APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM2400HCB-34N OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CIRCUIT DIAGRAM screwing depth min. 16.5 screwing depth min. 7.7 E C E C E C E G C LABEL C E G C ECM EE CC 3 - M4 NUTS 6 - M8 NUTS 38+1 28+1 +0.1 –0.2 ±0.2 ±0.2 ±0.2 ±0.2 ±0.3 ±0.3 ±0.3 ±0.1 ±0.3 ±0.3 29.5 61.561.5 140 124 ±0.1 ±0.5 ±0.2 ±0.15 ±0.5 79.4 20.25 57±0.1 5.2 41.25 57±0.1 8 - φ7 MOUNTING HOLES 171±0.1 190±0.5 57±0.1

Sep. 2009 MITSUBISHI HVIGBT MODULES CM2400HCB-34N HIGH POWER SWITCHING USE INSULATED TYPE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol Item Conditions Ratings Unit VCES VGES IC ICM IE IEM Pc Viso Tj Top Tstg tpsc Collector-emitter voltage Gate-emitter voltage Collector current Emitter current (Note 2) Maximum power dissipation (Note 3) Isolation voltage Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C DC, Tc = 80°C Pulse (Note 1) DC Pulse (Note 1) T c = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1 min. VCC = 1000V, VCE ≤ VCES, VGE = 15V, Tj = 125°C 1700 ± 20 2400 4800 2400 4800 15600 4000 –40 ~ +150 –40 ~ +125 –40 ~ +125 V V A A A A W V µs

ELECTRICAL CHARACTERISTICS

Tj = 25°C Tj = 125°C 5.5 7.0 6.5 396 21.6 6.3 27.4 2.10 2.35 0.65 0.70 2.20 1.85 750 0.50 7.5 0.5 2.70 1.50 0.60 3.00 0.60 3.00 1.50 Typ Limits MaxMin Unit I CES VGE(th) IGES Cies Coes Cres Qg VCE(sat) td(on) tr Eon(10%) td(off) tf Eoff(10%) VEC trr Qrr Erec(10%) Collector cutoff current Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage Turn-on delay time Turn-on rise time Turn-on switching energy (Note 5) Turn-off delay time Turn-off fall time Turn-off switching energy (Note 5) Emitter-collector voltage (Note 2) Reverse recovery time (Note 2) Reverse recovery charge (Note 2) Reverse recovery energy (Note 2), (Note 5) V CE = VCES, VGE = 0V VCE = 10 V, IC = 240 mA, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C VCE = 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C VCC = 900 V, IC = 2400 A, VGE = ±15 V, Tj = 25°C IC = 2400 A (Note 4) VGE = 15 V VCC = 900 V, IC = 2400 A, VGE = ±15 V RG(on) = 0.8 Ω, Tj = 125°C, Ls = 80 nH Inductive load VCC = 900 V, IC = 2400 A, VGE = ±15 V RG(off) = 1.1 Ω, Tj = 125°C, Ls = 80 nH Inductive load IE = 2400 A (Note 4) VGE = 0 V VCC = 900 V, IE = 2400 A, VGE = ±15 V RG(on) = 0.8 Ω, Tj = 125°C, Ls = 80 nH Inductive load mA V µA nF nF nF µC V µs µs J/P µs µs J/P V µs µC J/P Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Sep. 2009 MITSUBISHI HVIGBT MODULES CM2400HCB-34N HIGH POWER SWITCHING USE INSULATED TYPE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules THERMAL CHARACTERISTICS Symbol Item Conditions 6.0 8.0 12.0 Typ Limits MaxMin Unit R th(j-c)Q Rth(j-c)R Rth(c-f) Thermal resistance Thermal resistance Contact thermal resistance Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λ grease = 1W/m·K, D(c-f) = 100 µm K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item Conditions 7.0 3.0 1.0 600 19.5 32.0 1.5 0.18 13.0 6.0 2.0 Typ Limits MaxMin Unit M t Ms Mt m CTI d a ds LP CE RCC’+EE’ Mounting torque Mass Comparative tracking index Clearance Creepage distance Parasitic stray inductance Internal lead resistance M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw T c = 25°C N·m N·m N·m kg mm mm nH mΩ Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (T j) should not exceed Tjmax rating (150°C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. E on(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt.

Sep. 2009 MITSUBISHI HVIGBT MODULES CM2400HCB-34N HIGH POWER SWITCHING USE INSULATED TYPE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) TRANSFER CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) COLLECTOR-EMITTER SATURATION VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) EMITTER-COLLECTOR VOLTAGE (V) EMITTER CURRENT (A) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT (A) 1000 2000 3000 4000 5000 1000 2000 3000 4000 5000 1000 2000 3000 4000 5000 1000 2000 3000 4000 5000 01 3 24 5 01234 02 6 48 1 0 12 01234 Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C VGE = 15V VCE = 20V Tj = 125°C VGE = 8V VGE = 20V VGE = 10V VGE = 12V VGE = 15V

Sep. 2009 MITSUBISHI HVIGBT MODULES CM2400HCB-34N HIGH POWER SWITCHING USE INSULATED TYPE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 0.5 1.0 1.5 2.0 2.5 0 1000 2000 3000 4000 5000 02468 1 0 1 2 01 0 2 03 04 010010-1 23 5 7 101 10223 5 7 23 5 7 CAPACITANCE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE (V) CAPACITANCE (nF) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE CHARGE (µC) GATE-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) SWITCHING ENERGIES (J/P) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) -15 -10 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) GATE RESISTANCE (Ω) SWITCHING ENERGIES (J/P) VCC = 900V, IC = 2400A VGE = ±15V, Tj = 125°C Inductive load 103 104 102 101 100 VCE = 900V, IC = 2400A Tj = 25°C Erec Eoff Cies Coes Cres VCC = 900V, VGE = ±15V RG (on) = 0.8Ω, RG (off) = 1.1Ω Tj = 125°C, Inductive load Eon VGE = 0V, Tj = 25°C f = 100kHz Erec Eoff Eon

Sep. 2009 MITSUBISHI HVIGBT MODULES CM2400HCB-34N HIGH POWER SWITCHING USE INSULATED TYPE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules COLLECTOR CURRENT (A) SWITCHING TIMES (µs) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) EMITTER CURRENT (A) REVERSE RECOVERY TIME (µs) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT (A) 104 103 10110-1 100 101 10-1 102 102 423 5 7423 5 7 104103102 423 5 7423 5 7 104103 101 102 100 10-2 10-210-3 23 5 7 10-123 5 7 10023 5 7 10123 5 7 TIME (s) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE 1.2 1.0 0.8 0.6 0.4 0.2 td(off) td(on) tf tr VCC = 900V, VGE = ±15V RG (on) = 0.8Ω, RG (off) = 1.1Ω Tj = 125°C, Inductive load VCC = 900V, VGE = ±15V RG (on) = 0.8Ω, Tj = 125°C Inductive load lrr trr Rth(j–c)Q = 8.0K/kW Rth(j–c)R = 12.0K/kW

Sep. 2009 MITSUBISHI HVIGBT MODULES CM2400HCB-34N HIGH POWER SWITCHING USE INSULATED TYPE4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) REVERSE BIAS SAFE OPERATING AREA (RBSOA) 1000 2000 3000 4000 5000 6000 COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) COLLECTOR-EMITTER VOLTAGE (V) REVERSE RECOVERY CURRENT (A) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 0 500 1000 1500 2000 500 1000 1500 20000 500 1000 1500 2000 2500 3000 10000 20000 30000 40000 0 500 1000 1500 2000 VCC ≤ 1200V, di/dt ≤ 9000A/µs Tj = 125°C VCC ≤ 1000V, VGE = ±15V RG (on) ≥ 0.8Ω, RG (off) ≥ 1.1Ω Tj = 125°C, tpsc ≤ 10µs VCC ≤ 1200V, VGE = ±15V Tj = 125°C, RG (off) ≥ 1.1Ω

Product Information

CM2400HCB-34N specifications and overview.

Summary

HIGH POWER SWITCHING USE INSULATED TYPE

Description

HIGH POWER SWITCHING USE INSULATED TYPE

Source title CM2400HCB-34N Datasheet(PDF) - Mitsubishi Electric Semiconductor

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