CM2400HC-34N_09 MITSUBISHI | Alldatasheet

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Jul. 2005 MITSUBISHI HVIGBT MODULES CM2400HC-34N HIGH POWER SWITCHING USE INSULATED TYPE G Insulated Type G 1-element in a Pack G AISiC Baseplate G Trench Gate IGBT : CSTBT™ G Soft Reverse Recovery Diode APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers CM2400HC-34N HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules LABEL 5.2±0.2 15±0.2 40±0.2 GEC 20±0.1 140±0.5 124±0.25 18±0.2 4 - M8 NUTS 6 - φ 7 MOUNTING HOLES3 - M4 NUTS 130±0.5 57±0.25 57±0.25 40±0.2 61.5±0.3 10.35±0.2 10.65±0.2 48.8±0.2 5±0.2 38+1 screwing depth min. 16.5 screwing depth min. 7.7 C E G 4(C) 3(E) 2(C) 1(E) CIRCUIT DIAGRAM 29.5±0.5 28+1

Jul. 2005 MITSUBISHI HVIGBT MODULES CM2400HC-34N HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Collector-emitter voltage Gate-emitter voltage Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width V GE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 75°C Pulse (Note 1) Pulse (Note 1) TC = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1min. VCC = 1200V, VCES ≤ 1700V, VGE = 15V Tj = 125°C Collector current Emitter current 1700 ±20 2400 4800 2400 4800 13100 –40 ~ +150 –40 ~ +125 –40 ~ +125 4000 Symbol Item Conditions Unit Ratings V V A A A A W V µs V CES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc VCE = VCES, VGE = 0V, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C IC = 2400A, VGE = 15V, Tj = 25°C (Note 4) IC = 2400A, VGE = 15V, Tj = 125°C (Note 4) VCC = 850V, IC = 2400A, VGE = 15V, Tj = 25°C IE = 2400A, VGE = 0V, Tj = 25°C (Note 4) IE = 2400A, VGE = 0V, Tj = 125°C (Note 4) VCC = 850V, IC = 2400A, VGE = ±15V RG(on) = 0.7Ω , Tj = 125°C, Ls = 100nH Inductive load VCC = 850V, IC = 2400A, VGE = ±15V RG(off) = 1.6Ω , Tj = 125°C, Ls = 100nH Inductive load VCC = 850V, IC = 2400A, VGE = ±15V RG(on) = 0.7Ω , Tj = 125°C, Ls = 100nH Inductive load V V Min Typ Max 0.5 2.80 3.30 mA µA nF nF nF µC V µs µs mJ/pulse µs µs mJ/pulse µs A µC mJ/pulse I CES IGES Cies Coes Cres Qg VEC (Note 2) td(on) tr Eon td(off) tf Eoff trr (Note 2) Irr (Note 2) Qrr (Note 2) Erec(Note 2) Symbol Item Conditions VGE(th) VCE(sat) Limits Unit 6.0 Note 1. Pulse width and repetition rate should be such that junction temperature (T j) does not exceed T opmax rating (125 °C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (T j) should not exceed T jmax rating (150 °C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

ELECTRICAL CHARACTERISTICS

Reverse transfer capacitance Total gate charge Emitter-collector voltage Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery current Reverse recovery charge Reverse recovery energy I C = 240mA, VCE = 10V, Tj = 25°C VCE = 10V, f = 100kHz VGE = 0V, Tj = 25°C 2.15 2.40 352 19.2 5.6 13.6 2.60 2.30 1.00 0.40 640 1.20 0.30 840 1.00 900 620 380 7.0 8.0

Jul. 2005 MITSUBISHI HVIGBT MODULES CM2400HC-34N HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Rth(j-c)Q Rth(j-c)R Rth(c-f) Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λ grease = 1W/m·K K/kW K/kW K/kW Thermal resistance Contact thermal resistance Min Typ Max 9.5 21.0 8.0 THERMAL CHARACTERISTICS Symbol Item Conditions Limits Unit M CTI da ds LC-E(int) RC-E(int) M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw IGBT part T C = 25°C N·m kg mm mm nH mΩ Mounting torque Mass Comparative tracking index Clearance distance in air Creepage distance along surface Internal inductance Internal lead resistance Min Typ Max 20.0 6.0 3.0 0.8 0.14 7.0 3.0 1.0 600 19.5 32.0 MECHANICAL CHARACTERISTICS Symbol Item Conditions Limits Unit

Jul. 2005 MITSUBISHI HVIGBT MODULES CM2400HC-34N HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES 4800 006 COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) 4800 001 2 TRANSFER CHARACTERISTICS (TYPICAL ) GATE-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) 00 4800 00 4800 COLLECTOR CURRENT (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL ) EMITTER CURRENT (A) EMITTER-COLLECTOR VOLTAGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL ) COLLECTOR-EMITTER SATURATION VOLTAGE (V) 4000 3200 2400 1600 800 34215 4000 3200 2400 1600 800 68421 0 2400 32001600800 4000 2400 32001600800 4000 OUTPUT CHARACTERISTICS (TYPICAL ) VGE = 15V VGE = 12V VGE = 10V VGE = 8V Tj = 125°C VGE = 15V VCE = 20V Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C VGE = 20V

Jul. 2005 MITSUBISHI HVIGBT MODULES CM2400HC-34N HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 102 103 101 100 10010-1 23 5 7 101 10223 5 7 23 5 7 CAPACITANCE CHARACTERISTICS (TYPICAL ) COLLECTOR-EMITTER VOLTAGE (V) CAPACITANCE (nF) GATE CHARGE CHARACTERISTICS (TYPICAL ) GATE CHARGE (µC) GATE-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) SWITCHING ENERGIES (mJ/pulse) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL ) GATE RESISTANCE (Ω ) SWITCHING ENERGIES (mJ/pulse) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL ) 2000 2400 1600 1200 800 400 0 2400 320016008000 4000 4800 0 81 2401 6 2 0 3000 2500 2000 1500 1000 0 2406 8 500 VCC = 850V, IC = 2400A Tj = 25°C VCC = 850V, VGE = ±15V RG(on) = 0.7Ω , RG(off) = 1.6Ω Tj = 125°C, Inductive load VCC = 850V, IC = 2400A VGE = ±15V Tj = 125°C, Inductive load Eon Eon Eoff Eoff Erec Erec Cres Coes Cies VGE = 0V, Tj = 25°C f = 100kHz

Jul. 2005 MITSUBISHI HVIGBT MODULES CM2400HC-34N HIGH POWER SWITCHING USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 100 101 10-1 10-2 103102 23 5 7 10423 5 7 Module Chip 10-210-3 23 5 7 10-123 5 7 10023 5 7 10123 5 7 COLLECTOR CURRENT (A) 1.2 1.0 0.8 0.6 0.4 TIME (s) 0.2 6000 5000 4000 3000 2000 0 500 10000 1500 2000 1000 HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL ) EMITTER CURRENT (A) REVERSE RECOVERY CHARGE (µC) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL ) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR CURRENT (A) REVERSE BIAS SAFE OPERATING AREA (RBSOA ) 1000 800 600 400 200 0 2400 320016008000 4000 4800 SWITCHING TIMES (µs)NORMALIZED TRANSIENT THERMAL IMPEDANCE VCC = 850V, VGE = ±15V RG(on) = 0.7Ω , RG(off) = 1.6Ω Tj = 125°C, Inductive load VCC = 850V, VGE = ±15V RG(on) = 0.7Ω Tj = 125°C, Inductive load Qrr tr tf Single Pulse, TC = 25°C Rth(j–c)Q = 9.5K/kW Rth(j–c)R = 21K/kW VCC ≤ 1200V, VGE = +/-15V Tj = 125°C, RG(off) ≥ 1.6Ω td(off) td(on)