CM2400HC-34H MITSUBISHI | Alldatasheet
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N otice: This is not a final specification. Som e param etric lim its are subject to change. Mar. 2003 MITSUBISHI HVIGBT MODULES CM2400HC-34H HIGH POWER SWITCHING USE INSULATED TYPE G Insulated Type G 1-element in a pack G AISiC base plate APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. CM2400HC-34H OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) CIRCUIT DIAGRAM E C EE CC E G C LABEL C E G C ECM EE CC 29.5 61.561.5 140 124 ±0.25 79.4 20.25 57±0.25 171 190 5.2 41.25 57±0.25 57±0.25 3 - M4 NUTS 8 - φ7MOUNTING HOLES 6 - M8 NUTS
N otice: This is not a final specification. Som e param etric lim its are subject to change. Mar. 2003 MITSUBISHI HVIGBT MODULES CM2400HC-34H HIGH POWER SWITCHING USE INSULATED TYPE V V VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V Tj = 25°C Tj = 125°C VCC = 850V, IC = 2400A, VGE = 15V VCC = 850V, IC = 2400A VGE1 = VGE2 = 15V R G = 0.27Ω Resistive load switching operation I E = 2400A, VGE = 0V IE = 2400A, die / dt = –5800A / µs Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied I C = 240mA, VCE = 10V IC = 2400A, VGE = 15V (Note 4) VCE = 10V VGE = 0V Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass V GE = 0V VCE = 0V DC, TC = 80°C Pulse (Note 1) Pulse (Note 1) TC = 25°C, IGBT part Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value Collector current Emitter current 1700 ±20 2400 4800 2400 4800 17800 –40 ~ +150 –40 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 MAXIMUM RATINGS (Tj = 25°C) Symbol Item Conditions Unit Ratings V V A A A A W V N·m N·m N·m kg VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Min Typ Max 0.5 1.60 2.00 2.70 0.80 2.70 0.007 0.012 mA µA nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W 2.60 3.20 210 27.0 10.8 19.8 2.60 900 0.006 I CES IGES C ies C oes C res Q G td (on) tr td (off) tf V EC (Note 2) trr (Note 2) Q rr (Note 2) R th(j-c)Q R th(j-c)R R th(c-f) ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol Item Conditions VGE(th) VCE(sat) Limits Unit 5.54.5 Note 1. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 2. IE , VEC , trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 6.5 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)