CM200TU-5F MITSUBISHI | Alldatasheet
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Sep. 2000 CM200TU-5F APPLICATION Inverters for battery power source MITSUBISHI IGBT MODULES CM200TU-5F HIGH POWER SWITCHING USE \ Insulated Type \ 6-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm P N G U P EU P G U N U EU N G VP EVP G VN V EVN G W P EW P G W N W EW N GuN EuN GvN EvN GwN EwN GuP EuP GvP EvP GwP EwP E GGG GGG EE EEE U V W PN CM 2.8 7.1 12 (4)12 26 8.1 11 21.7 11 21.7 11 0.8 14.411 21.7 11 21.7 11 107 12 23 12 1223 90 –0.25 80 –0.25 102 48.5 17 3.75 3.75 4–φ5.5 MOUNTING HOLES 5–M5NUTS LABEL 0.5 –0.5 CIRCUIT DIAGRAM Tc measured pointTc measured point
Sep. 2000 MITSUBISHI IGBT MODULES CM200TU-5F HIGH POWER SWITCHING USE 0.5 1.7 3.5 1.9 600 300 900 500 250 2.0 0.21 0.47 0.16 mA µA nF nC µC V °C/W 1.2 1.1 1500 10.0 0.09 4.0 V V ns 3.0 5.0 ns 250 ±20 200 400 200 400 600 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 680 V V W V N • m N • m g A A VCE = VCES , VGE = 0V VGE = VCES , VCE = 0V Tj = 25°C Tj = 125°C VCC = 100V, IC = 200A, VGE = 10V VCC = 100V, IC = 200A VGE1 = VGE2 = 10V RG = 13Ω , Inductive load switching operation IE = 200A IE = 200A, VGE = 0V IGBT part (1/6 module) FWDi part (1/6 module) Case to fin, Thermal compoundapplied *2 (1/6 module) Tc measured point is just under the chips IC = 20mA, VCE = 10V IC = 200A, VGE = 10V VCE = 10V VGE = 0V Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance T otal gate charge T urn-on delay time T urn-on rise time T urn-off delay time T urn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance Gate-emitter threshold voltage Collector to emitter saturation voltage Thermal resistance*1 ICES IGES C ies C oes C res Q G td(on) tr td(off) tf trr (Note 1) Q rr (Note 1) VEC(Note 1) R th(j-c)Q R th(j-c)R R th(c-f) R th(j-c’)Q Symbol Parameter VGE(th) VCE(sat) Note 1. IE, VEC , trr, Qrr and die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short T C = 25°C Pulse (Note 2) TC = 25°C Pulse (Note 2) T C = 25°C Main T erminal to base plate, AC 1 min. Main T erminal M5 Mounting holes M5 T ypical value Symbol Parameter Collector current Emitter current T orque strength Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTy p. Limits Min. Max. MAXIMUM RATINGS (Tj = 25°C) ELECTRICAL CHARACTERISTICS (Tj = 25°C) Test conditions