CM200TU-12F

CM200TU-12F_09 MITSUBISHI | Alldatasheet

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Feb. 2009 P UV W GUPG VPG WP GUNG VNG WN EUNE VNE WN N EUPE VPE WP RTC RTCRTC RTC RTCRTC GuN EuN GvN EvN GwN EwN GuP EuP GvP EvP GwP EwP E GGG GGG EE EEE U V W PN CM 2.8 7.1 12 (4)12 26 8.1 11 21.7 11 21.7 11 0.8 14.411 21.7 11 21.7 11 107 12 23 12 1223 90 ±0.25 80 ±0.25 102 48.5 17 3.75 3.75 4–φ5.5 MOUNTING HOLES 5–M5NUTS LABEL 0.5 –0.5 Tc measured pointTc measured point CIRCUIT DIAGRAM CM200TU-12F APPLICATION General purpose inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM200TU-12F HIGH POWER SWITCHING USE ¡Insulated Type ¡6-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

Feb. 2009 VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V VCC = 300V, IC = 200A, VGE = 15V VCC = 300V, IC = 200A VGE = ±15V RG = 3.1Ω, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/6 module) FWDi part (1/6 module) Case to heat sink, Thermal compound applied*2 (1/6 module) Case temperature measured point is just under the chips IC = 20mA, VCE = 10V IC = 200A, VGE = 15V VCE = 10V VGE = 0V 600 ±20 200 400 200 400 590 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 680 MITSUBISHI IGBT MODULES CM200TU-12F HIGH POWER SWITCHING USE V V W Vrms N • m N • m g A A 2.2 3.6 2.0 120 100 350 250 150 2.6 0.21 0.35 0.15* mA µA nF nC µC V K/W Ω 1.6 1.6 1240 3.8 0.09 3.1 V ns ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance*1 ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Symbol Parameter VGE(th) VCE(sat) Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short TC = 25°C Pulse (Note 2) TC = 25°C Pulse (Note 2) TC = 25°C Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions UnitRatings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max. MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Test conditions Tj = 25°C Tj = 125°C

Feb. 2009 MITSUBISHI IGBT MODULES CM200TU-12F HIGH POWER SWITCHING USE PERFORMANCE CURVES 0.5 1.5 2.5 3.51234 100 150 200 250 300 350 400 7.5 1511 100 101 102 103 0 0.5 1 1.5 2 2.5 3 3.5 4 10–1 100 101 102 10–1 2 10035 7 2 10135 7 2 10235 7 2.5 1.5 0.5 0 300 4000 100 200 0 16 18 2068 1 0 12 14 0 10123 5 7 10223 5 7 10323 5 7 101 100 102 103 IC = 400A IC = 200A IC = 80A Tj = 25°C VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C Conditions: td(off) td(on) tf tr Tj=25°C VGE=20V 9.5 VGE = 15V Tj = 25°C Tj = 125°C 8.5 Tj = 25°C Cies Coes Cres VGE = 0V OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SWITCHING TIMES (ns) COLLECTOR CURRENT IC (A)

Feb. 2009 MITSUBISHI IGBT MODULES CM200TU-12F HIGH POWER SWITCHING USE 101 10223 5 7 10323 5 7 100 101 102 101 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 0 200 600 1400 18001000 Single Pulse TC = 25°C trr Irr IC = 200A VCC = 200V VCC = 300V Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 25°C REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) IGBT part: Per unit base = Rth(j–c) = 0.21K/W FWDi part: Per unit base = R th(j–c) = 0.35K/W REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A)