CM200TL-12NF MITSUBISHI | Alldatasheet

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Feb. 2009 CM200TL-12NF APPLICATION AC drive inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM200TL-12NF HIGH POWER SWITCHING USE ¡Insulated Type ¡6-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm P BU N CN-7 CN-8 CN-5 CN-6 UP-1 UP-2 V CN-3 CN-4 VP-1 VP-2 W CN-1 CN-2 WP-1 WP-2 NC NC NC LABEL U BNP VW CN WP VP UP 202016.5 11.7262617.5 135 10.5 10.5 18.7 110 10.510.5 10.5 10.5 (13) 48.75 13.75 26.5 4-φ5.5 MOUNTING HOLES 78 ±0.5 (6.05) (6.05) 2530.5 25 (13) 1146.3 A B 24.1 (SCREWING DEPTH) 6-M5 NUTS –0.5 Housing Type of A and B A = B8P-VH-FB-B, B = B2P-VH-FB-B CIRCUIT DIAGRAM

Feb. 2009 VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 300V, IC = 200A, VGE = 15V VCC = 300V, IC = 200A VGE = ±15V RG = 3.1Ω, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to heat sink, Thermal compound Applied (1/6 module)*2 IC = 20mA, VCE = 10V IC = 200A, VGE = 15V VCE = 10V VGE = 0V 600 ±20 200 400 200 400 890 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 750 MITSUBISHI IGBT MODULES CM200TL-12NF HIGH POWER SWITCHING USE V V A A A A W Vrms N • m N • m g 0.5 2.2 3.7 1.2 120 100 300 300 150 2.8 0.14 0.22 mA µA nF nF nF nC ns ns ns ns µC V K/W K/W K/W Ω 1.7 1.7 800 4.8 0.051 3.1 V ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Symbol Parameter VGE(th) VCE(sat) *1 : Case temperature (Tc) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short DC, TC = 88°C*1 Pulse (Note 2) Pulse (Note 2) TC = 25°C Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions UnitRatings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso UnitTyp. Limits Min. Max. ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Test conditions

Feb. 2009 MITSUBISHI IGBT MODULES CM200TL-12NF HIGH POWER SWITCHING USE PERFORMANCE CURVES 400 300 200 100 Tj = 25°C VGE = 20V 15 02468 1 0 0101 102 103 0 100 200 300 400 VGE = 15V Tj = 25°C Tj = 125°C 0 2012 1468 1 0 16 18 Tj = 25°C IC = 200A IC = 400A IC = 60A 12 4 35 Tj = 25°C Tj = 125°C 10–1 2 10035 7 2 10135 7 2 10235 7 Cies Coes Cres VGE = 0V 100 101 102 103 10–1 100 101 102 101 10257 10323 5 723 Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive load td(on) td(off) tf tr OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A)

Feb. 2009 MITSUBISHI IGBT MODULES CM200TL-12NF HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IE (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) TIME (s) RECOVERY LOSS vs. IE (TYPICAL) RECOVERY LOSS (mJ/pulse) EMITTER CURRENT IE (A) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS (mJ/pulse) COLLECTOR CURRENT IC (A) RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) RECOVERY LOSS (mJ/pulse) GATE RESISTANCE RG (Ω) SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) SWITCHING LOSS (mJ/pulse) GATE RESISTANCE RG (Ω) 101 10223 5 7 10323 5 7 101 102 103 trr Irr Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 25°C Inductive load 101 100 10–1 101 10257 10323 5 723 Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive load C snubber at bus Err 101 100 10–1 101 10257 10323 5 723 Conditions: VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive load C snubber at bus Esw(off) Esw(on) 102 101 100 Conditions: V CC = 300V VGE = ±15V IC = 200A Tj = 125°C Inductive load C snubber at bus Esw(off) Esw(on) 100 10157 10223 5 723 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse, TC = 25°C Under the chip IGBT part: Per unit base = Rth(j–c) = 0.14K/W FWDi part: Per unit base = R th(j–c) = 0.22K/W 101 100 10–1 100 10157 10223 5 723 Conditions: VCC = 300V VGE = ±15V IE = 200A Tj = 125°C Inductive load C snubber at bus Err

Feb. 2009 GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) 400 800 1000200 600 12000 VCC = 300V VCC = 200V IC = 200A MITSUBISHI IGBT MODULES CM200TL-12NF HIGH POWER SWITCHING USE