CM200RL-24NF

CM200RL-24NF MITSUBISHI | Alldatasheet

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Feb. 2009 CM200RL-24NF APPLICATION AC drive inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM200RL-24NF HIGH POWER SWITCHING USE ¡Insulated Type ¡7-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm LABEL U BNP VW CN WP VP UP 202016.5 11.7262617.5 135 10.5 10.5 18.7 110 10.510.5 10.5 10.5 (13) 48.75 13.75 26.5 4-φ5.5 MOUNTING HOLES 78 ±0.5 (6.05) (6.05) 2530.5 25 (13) 1146.3 A B 24.1 (SCREWING DEPTH) 6-M5 NUTS –0.5 Housing Type of A and B A = B8P-VH-FB-B, B = B2P-VH-FB-B P BU N CN-7 CN-8 CN-5 CN-6 UP-1 UP-2 V CN-3 CN-4 VP-1 VP-2 W CN-1 CN-2 WP-1 WP-2 CIRCUIT DIAGRAM

Feb. 2009 1200 ±20 200 400 200 400 1160 MITSUBISHI IGBT MODULES CM200RL-24NF HIGH POWER SWITCHING USE V V A A A A W Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation G-E Short C-E Short DC, T C = 72°C*1 Pulse (Note 2) Pulse (Note 2) TC = 25°C Symbol Parameter Collector current Emitter current Conditions UnitRatings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) ABSOLUTE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) INVERTER PART 1200 ±20 100 200 620 1200 100 V V A A W V A Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Repetitive peak reverse voltage Forward current G-E Short C-E Short DC, T C = 80°C*1 Pulse (Note 2) TC = 25°C Clamp diode part Clamp diode part Symbol Parameter Collector current Conditions UnitRatings V CES VGES IC ICM PC (Note 3) VRRM IFM BRAKE PART –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 750 Vrms N • m N • m g Junction temperature Storage temperature Isolation voltage Torque strength Weight Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value Symbol Parameter Conditions UnitRatings T j Tstg Viso (COMMON RATING)

Feb. 2009 MITSUBISHI IGBT MODULES CM200RL-24NF HIGH POWER SWITCHING USE IC = 20mA, VCE = 10V Tj = 25°C Tj = 125°C VCE = 10V VGE = 0V VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V IC = 200A, VGE = 15V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = ±15V RG = 1.6Ω, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to heat sink, Thermal compound Applied (1/6 module)*2 0.5 3.1 0.68 130 400 350 150 3.8 0.11 0.17 mA µA nF nF nF nC ns ns ns ns µC V K/W K/W K/W Ω 2.1 2.4 1000 0.051 1.6 V ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) RG Symbol Parameter VGE(th) VCE(sat) UnitTyp. Limits Min. Max.Test conditions ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) INVERTER PART IC = 10mA, VCE = 10V Tj = 25°C Tj = 125°C VCE = 10V VGE = 0V VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V IC = 100A, VGE = 15V VCC = 600V, IC = 100A, VGE = 15V IF = 100A IGBT part*1 Clamp diode part*1 0.5 3.0 17.5 1.5 0.34 3.8 0.20 0.28 mA µA nF nF nF nC V K/W K/W Ω 2.1 2.4 500 3.1 V Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage ICES IGES Cies Coes Cres QG VFM Rth(j-c)Q Rth(j-c)R RG Symbol Parameter VGE(th) VCE(sat) *1 : Case temperature (Tc) measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. UnitTyp. Limits Min. Max.Test conditions BRAKE PART

Feb. 2009 MITSUBISHI IGBT MODULES CM200RL-24NF HIGH POWER SWITCHING USE PERFORMANCE CURVES 0101 102 103 400 350 300 250 200 150 100 0 100 200 300 40050 150 250 350 OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (V) Tj = 25°C VGE = 20V 15 COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) COLLECTOR CURRENT IC (A) VGE = 15V Tj = 25°C Tj = 125°C 0 2012 1468 1 0 16 18 GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) Tj = 25°C IC = 200A IC = 400A IC = 80A 12 4 35 FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) Tj = 25°C Tj = 125°C 10–1 2 10035 7 2 10135 7 2 10235 7 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) Cies Coes Cres VGE = 0V 100 101 102 103 10–1 100 101 102 101 10257 10323 5 723 HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) COLLECTOR CURRENT IC (A) Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive load td(off) td(on) tf tr 02468 1 0 0

Feb. 2009 MITSUBISHI IGBT MODULES CM200RL-24NF HIGH POWER SWITCHING USE 101 10223 5 7 10323 5 7 101 102 103 trr Irr REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT IE (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 25°C Inductive load 10–3 102 101 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse, TC = 25°C Under the chip TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) TIME (s) IGBT part: Per unit base = Rth(j–c) = 0.11K/W FWDi part: Per unit base = R th(j–c) = 0.17K/W 100 101 10257 10323 5 723 RECOVERY LOSS vs. IE (TYPICAL) RECOVERY LOSS (mJ/pulse) EMITTER CURRENT IE (A) Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive load C snubber at bus Err 102 101 100 101 10257 10323 5 723 SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS (mJ/pulse) COLLECTOR CURRENT IC (A) Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive load C snubber at bus Esw(off) Esw(on) SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) SWITCHING LOSS (mJ/pulse) GATE RESISTANCE RG (Ω) 102 101 100 Conditions: V CC = 600V VGE = ±15V IC = 200A Tj = 125°C Inductive load C snubber at bus Esw(off) Esw(on) 100 10157 10223 5 723 102 101 100 100 10157 10223 5 723 RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) RECOVERY LOSS (mJ/pulse) GATE RESISTANCE RG (Ω) Conditions: VCC = 600V VGE = ±15V IE = 200A Tj = 125°C Inductive load C snubber at bus Err

Feb. 2009 400 800 1200200 600 1000 14000 GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) VCC = 600V VCC = 400V IC = 200A MITSUBISHI IGBT MODULES CM200RL-24NF HIGH POWER SWITCHING USE