CM200RL-12NF

CM200RL-12NF MITSUBISHI | Alldatasheet

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Jun. 2004 CM200RL-12NF APPLICATION AC drive inverters & Servo controls, etc MITSUBISHI IGBT MODULES CM200RL-12NF HIGH POWER SWITCHING USE ¡Insulated Type ¡7-elements in a pack OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm LABEL U BNP VW CN WP VP UP 202016.5 11.7262617.5 135 10.5 10.5 18.7 110 10.510.5 10.5 10.5 (13) 48.75 13.75 26.5 4-φ5.5 MOUNTING HOLES 78 ±0.5 (6.05) (6.05) 2530.5 25 (13) 1146.3 A B 24.1 (SCREWING DEPTH) 6-M5 NUTS –0.5 Housing Type of A and B A = B8P-VH-FB-B, B = B2P-VH-FB-B P BU N CN-7 CN-8 CN-5 CN-6 UP-1 UP-2 V CN-3 CN-4 VP-1 VP-2 W CN-1 CN-2 WP-1 WP-2 CIRCUIT DIAGRAM

Jun. 2004 600 ±20 200 400 200 400 890 MITSUBISHI IGBT MODULES CM200RL-12NF HIGH POWER SWITCHING USE V V A A A A W Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation G-E Short C-E Short DC, T C = 88°C *1 Pulse (Note 2) Pulse (Note 2) TC = 25°C Symbol Parameter Collector current Emitter current Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) ABSOLUTE MAXIMUM RATINGS (Tj = 25°C) INVERTER PART 600 ±20 100 200 540 600 100 V V A A W V A Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Repetitive peak reverse voltage Forward current G-E Short C-E Short DC, T C = 99°C *1 Pulse (Note 2) TC = 25°C Clamp diode part Clamp diode part Symbol Parameter Collector current Conditions Unit Ratings V CES VGES IC ICM PC (Note 3) VRRM IFM BRAKE PART –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 750 V N • m N • m g Junction temperature Storage temperature Isolation voltage Torque strength Weight Main Terminal to base plate, AC 1 min. Main Terminal M5 Mounting holes M5 Typical value Symbol Parameter Conditions Unit Ratings T j Tstg Viso (COMMON RATING)

Jun. 2004 VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V Tj = 25°C Tj = 125°C VCC = 300V, IC = 100A, VGE = 15V IF = 100A IGBT part*1 Clamp diode part*1 IC = 10mA IC = 100A, VGE = 15V VCE = 10V VGE = 0V IC = 20mA, VCE = 10V IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCE = VCES , VGE = 0V VGE = VGES , VCE = 0V Tj = 25°C Tj = 125°C VCC = 300V, IC = 200A, VGE = 15V VCC = 300V, IC = 200A VGE1 = VGE2 = 15V R G = 3.1Ω , Inductive load switching operation IE = 200A IE = 200A, VGE = 0V IGBT part (1/6 module)*1 FWDi part (1/6 module)*1 Case to fin, Thermal compound Applied (1/6 module)*2 MITSUBISHI IGBT MODULES CM200RL-12NF HIGH POWER SWITCHING USE 0.5 2.2 3.7 1.2 120 100 300 300 150 2.8 0.14 0.22 mA µA nF nF nF nC ns ns ns ns µC V °C/W °C/W °C/W Ω 1.7 1.7 800 4.8 0.051 3.1 V ns Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance ICES IGES C ies C oes C res Q G td(on) tr td(off) tf trr (Note 1) Q rr (Note 1) VEC(Note 1) R th(j-c)Q R th(j-c)R R th(c-f) R G Symbol Parameter VGE(th) VCE(sat) UnitTyp. Limits Min. Max.Test conditions ELECTRICAL CHARACTERISTICS (Tj = 25°C) INVERTER PART 0.5 2.2 1.9 0.6 2.8 0.23 0.41 mA µA nF nF nF nC V °C/W °C/W Ω 1.7 1.7 400 6.3 V Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Forward voltage drop Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage ICES IGES C ies C oes C res Q G VFM R th(j-c)Q R th(j-c)R R G Symbol Parameter VGE(th) VCE(sat) *1 : Tc measured point is just under the chips. If you use this value, Rth(f-a) should be measured just under the chips. *2 : Typical value is measured by using Shin-etsu Silicone “G-746”. Note 1. IE, VEC , trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause neglible temperature rise. UnitTyp. Limits Min. Max.Test conditions BRAKE PART

Jun. 2004 MITSUBISHI IGBT MODULES CM200RL-12NF HIGH POWER SWITCHING USE PERFORMANCE CURVES 400 300 200 100 Tj = 25°C VGE = 20V 15 02468 1 0 0101 102 103 0 100 200 300 400 VGE = 15V Tj = 25°C Tj = 125°C 0 2012 146 8 10 16 18 Tj = 25°C IC = 200A IC = 400A IC = 60A 12 4 35 Tj = 25°C Tj = 125°C 10–1 2 10035 7 2 10135 7 2 10235 7 C ies C oes C res VGE = 0V 100 101 102 103 10–1 100 101 102 101 10257 10323 5 723 Conditions: VCC = 300V VGE = ±15V R G = 3.1Ω Tj = 125°C Inductive load td(on) td(off) tf tr OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) COLLECTOR CURRENT I C (A) GATE-EMITTER VOLTAGE V GE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE V CE (sat) (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT I E (A) EMITTER-COLLECTOR VOLTAGE V EC (V) CAPACITANCE–V CE CHARACTERISTICS (TYPICAL) CAPACITANCE C ies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE V CE (V) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) SWITCHING TIME (ns) COLLECTOR CURRENT I C (A)

Jun. 2004 MITSUBISHI IGBT MODULES CM200RL-12NF HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) EMITTER CURRENT I E (A) REVERSE RECOVERY TIME t rr (ns) REVERSE RECOVERY CURRENT l rr (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th (j–c) (ratio) TIME (s) RECOVERY LOSS vs. I E (TYPICAL) RECOVERY LOSS (mJ/pulse) EMITTER CURRENT I E (A) SWITCHING LOSS vs. COLLECTOR CURRENT (TYPICAL) SWITCHING LOSS (mJ/pulse) COLLECTOR CURRENT I C (A) RECOVERY LOSS vs. GATE RESISTANCE (TYPICAL) RECOVERY LOSS (mJ/pulse) GATE RESISTANCE R G (Ω ) SWITCHING LOSS vs. GATE RESISTANCE (TYPICAL) SWITCHING LOSS (mJ/pulse) GATE RESISTANCE R G (Ω ) 101 10223 5 7 10323 5 7 101 102 103 trr Irr Conditions: VCC = 300V VGE = ±15V R G = 3.1Ω Tj = 25°C Inductive load 101 100 10–1 101 10257 10323 5 723 Conditions: VCC = 300V VGE = ±15V R G = 3.1Ω Tj = 125°C Inductive load C snubber at bus Err 101 100 10–1 101 10257 10323 5 723 Conditions: VCC = 300V VGE = ±15V R G = 3.1Ω Tj = 125°C Inductive load C snubber at bus Esw(off) Esw(on) 102 101 100 Conditions: VCC = 300V VGE = ±15V IC = 200A Tj = 125°C Inductive load C snubber at bus Esw(off) Esw(on) 100 10157 10223 5 723 10–3 10–5 10–4 100 10–2 10–1 10–323 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse, TC = 25°C Under the chip IGBT part: Per unit base = R th(j–c) = 0.14°C/W FWDi part: Per unit base = R th(j–c) = 0.22°C/W 101 100 10–1 100 10157 10223 5 723 Conditions: VCC = 300V VGE = ±15V IE = 200A Tj = 125°C Inductive load C snubber at bus Err

Jun. 2004 GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE V GE (V) GATE CHARGE Q G (nC) 400 800 1000200 600 12000 VCC = 300V VCC = 200V IC = 200A MITSUBISHI IGBT MODULES CM200RL-12NF HIGH POWER SWITCHING USE