CM200E3U-12H

CM200E3U-12H_09 MITSUBISHI | Alldatasheet

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Feb. 2009 MITSUBISHI IGBT MODULES CM200E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE

• Insulated Type
• 1-element in a pack APPLICATION Brake CM200E3U-12H OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm CIRCUIT DIAGRAM C2E1 E2 C1 G2E2 2–φ6.5 MOUNTING HOLES 3-M5 NUTS TAB #110. t = 0.5 CM E2 G2 LABEL C2E1 C1E2 12mm deep 13.5 30 -0.5+1 7 80 ±0.25 114 17 23 23 7.521.2 16 16 2.5252.5 TC measured point

Feb. 2009 MITSUBISHI IGBT MODULES CM200E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) VGE = 0V VCE = 0V TC = 25°C Pulse (Note 1) T C = 25°C Pulse (Note 1) T C = 25°C Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value 600 ±20 200 400 200 400 650 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 V V A A A A W Vrms N·m N·m g Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight Collector current Emitter current Symbol Item Conditions Unit Ratings V V V CE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V Tj = 25°C Tj = 125°C VCC = 300V, IC = 200A, VGE = 15V VCC = 300V, IC = 200A VGE = ±15V RG = 3.1Ω Resistive load IE = 200A, VGE = 0V IE = 200A die / dt = –400A / µs Junction to case, IGBT part Junction to case, FWDi part I F = 200A, Clamp diode part IF = 200A dif / dt = –400A / µs, Clamp diode part Junction to case, Clamp diode part Case to heat sink, conductive grease applied (Per 1/2 module) (Note 6) IC = 20mA, VCE = 10V IC = 200A, VGE = 15V (Note 4) VCE = 10V VGE = 0V 0.5 3.0 17.6 9.6 2.6 150 400 300 300 2.6 160 0.19 0.35 2.6 160 0.35 mA µA nF nF nF nC ns ns ns ns V ns µC K/W K/W V ns µC K/W K/W 2.4 2.6 400 0.48 0.48 0.07 64.5 7.5 Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Forward voltage Reverse recovery time Reverse recovery charge Thermal resistance (Note 5) Contact thermal resistance Min Typ Max I CES IGES Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R VFM trr Qrr Rth(j-c) Rth(c-f) ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Item Test Conditions VGE(th) VCE(sat) Limits Unit Thermal resistance (Note 5) VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso Note 1. Pulse width and repetition rate should be such that the device junction temperature (T j) does not exceed T jmax rating. 2. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. 3. Junction temperature (T j) should not increase beyond 150 °C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Case temperature (T C) measured point is shown in page OUTLINE DRAWING. 6. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].

Feb. 2009 MITSUBISHI IGBT MODULES CM200E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE CAPACITANCE CHARACTERISTICS (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR-EMITTER VOLTAGE VCE (V) OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) EMITTER CURRENT IE (A) EMITTER-COLLECTOR VOLTAGE VEC (V) 101 102

7 Tj = 25°C

VGE=20 (V) Tj=25°C 300 200 400 100 0 200 48 1 2 16 VCE = 10V Tj = 25°C Tj = 125°C 0 100 200 300 400 500 Tj = 25°C Tj = 125°C VGE = 15V 0 200 48 1 2 16 Tj = 25°C IC = 400A IC = 200A IC = 80A 10–1 100 101 102 10–1 2 10035 7 2 10135 7 2 10235 7 VGE = 0V Cies Coes Cres PERFORMANCE CURVES

Feb. 2009 MITSUBISHI IGBT MODULES CM200E3U-12H HIGH POWER SWITCHING USE INSULATED TYPE 101 10223 5 7 10323 5 7 101 102 103 td(off) VCC = 300V VGE = ±15V RG = 3.1Ω Tj = 125°C td(on) tf tr 101 10223 5 7 10323 5 7 101 102 103 10–1 100 101 –di/dt = 400A/µs Tj = 25°C trr lrr 101 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Per unit base = Rth(j – c) = 0.19K/W 101 10–3 10–5 10–4 100 10–2 10–1 10–3 23 57 23 57 23 57 23 57 10110–2 10–1 100 10–3 10–3 10–2 10–1 23 57 23 57 Single Pulse TC = 25°C Per unit base = Rth(j – c) = 0.35K/W 0 100 200 300 400 500 600 VCC = 200V VCC = 300V IC = 200A COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) SWITCHING TIMES (ns) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT Irr (A) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) GATE CHARGE QG (nC) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) TIME (s) TIME (s)